81 210 W 07 TRANSISTOR Search Results

20S45

Abstract: C67078-S1357-A2 103AL
Contextual Info: BUZ 103AL SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Low on-resistance • 175 °C operating temperature Pin 1 • also in TO-220 SMD available Pin 2 G Pin 3 D S Type VDS ID RDS on

Contextual Info: H Avantek Products Surface Mount Cascadable Amplifier 10 to 500 MHz Technical Data PPA-557 Features Description Pin Configuration • Frequency Range: 10 to 500␣MHz The PPA-557 high-power, low voltage, medium gain RF amplifier containing discrete HP transistors

Contextual Info: Whp1H EW LETT milKM PACKARD Avantek Products Surface Mount Cascadable Amplifier 10 to 500 MHz Technical Data PPA-557 Features Description Pin Configuration • F requency Range: 10 to 500 MHz The PPA-557 high-power, low voltage, medium gain RF amplifier containing discrete HP transistors

NEC NE85635

Abstract: 2SC3356 to 92 NE85634 NEC 2501 MF 216 TRANSISTOR NEC B77 NE85834 2sc3356 NE856 sot23 41 NE85635
Contextual Info: NEC NE C / CALIFORNIA 5 L .E J> b457414 000240^ NPN SILICON HIGH FREQUENCY TRANSISTOR 437 M N E C C NE856 S ER IES FEATURES DESCRIPTION AND APPLICATIONS • H IG H GAIN BANDW IDTH P R O D U C T : fr = 7 G H z The N E856 series of NPN epitaxial silicon transistors is

NE99532

Abstract: 2sc3358 NE3005B20 NE85637 NE4201 NE1010E 2SC3358 transistor ne3005b-20 NE1005E NEC 8563
Contextual Info: NEC/ CALIFORNIA 1SE D bMs?m4 D D o m a i a T IM S - T - it- t r NEC NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES T'3h21 FEATURES DESCRIPTION AND APPLICATIONS • H IG H G A IN B A N D W ID T H P R O D U C T : f r = 7 G H z The NE856 series of NPN epitaxial silicon transistors Is de­

MWT671HP

Contextual Info: MwT - 6 18 GHz High Power G aAs FET MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES 292 tool iseJ I—I » —I U J Isol - 33*-CHIP THICKNESS = 12 5 M ORONS MwT-6 • • • • • • 0.5 WATT POWER OUTPUT AT 12 GHZ

Contextual Info: bbE d MICROÜIAVE TECHNOLOGY • biE m ao ooooebü a m hm riiiv MwT - 6 18 GHz High Power GaAs FET MicroWave Technology n p 4268 Solar Way Fremont, CA 94538 510-651-6700 F A X 510-651-2208 FEATURES n I— I r ■ n 100 IsoJ Is o i I— 130—1 is o l Is J

4S2/4330 030 36301

Abstract: 1800 ldmos 2222-581 4S2/4330 philips resistor 2322 BLF1820-90 4330 030 36301
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF1820-90 UHF power LDMOS transistor Product specification 2001 Mar 07 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1820-90 FEATURES PINNING • High power gain PIN DESCRIPTION

PPA557

Contextual Info: W/ÌB% HEWLETT mL'ftm P A C K A R D Avantek Products Surface Mount Cascadable Amplifier 10 to 500 MHz Technical Data PPA-557 Features • Frequency Range: 10 to 500 MHz • M oderate Gain: 13.1 dB Typ • High Power Output: +20 dBm (Typ) • +5 Volt Supply

CTB110

Abstract: CTB152 MHW9182CN XMD110 XMD152
Contextual Info: Freescale Semiconductor Technical Data CATV Amplifier Module LIFETIME BUY Features • Specified for 110 - and 152 - Channel Loading • Excellent Distortion Performance • Superior Gain, Return Loss and DC Current Stability over Temperature • Silicon Bipolar Transistor Technology

Contextual Info: Q avantek PPA-557 Surface Mount Cascadable Amplifier 10 to 500 MHz FEATURES APPLICATIONS • Frequency Range: 10 to 500 MHz • Moderate Gain: 13.1 dB Typ • High Power Output: +20 dBm (Typ) • +5V Power Supply • Surface Mount Package • Compact or Portable IF Amplifier

8C702

Abstract: 74AS885 p2231
Contextual Info: SN74AS885, SN54AS885 8-BIT MAGNITUDE COMPARATORS D2661, DECEMBER 1982 - REVISED MARCH 19S5 Package Option« Include Plastic 'S m all O utline' Packages, Ceramic Chip Carriers, and Standard Plastic and Ceramic 300-mil DIPs S N B 4A S 88 5 . . . . JT PACKAGE

marking FB

Contextual Info: BFR360T NPN Silicon RF Transistor* • Low voltage/ low current operation • For low noise amplifiers 2 3 1 • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

crcw06031000fkta

Abstract: CRCW06031200FKTA CRCW06030000FKTA CRCW06032001FKTA GaAs FET chip A113 CTB112 CTB132 MMG1001NT1 XMD112
Contextual Info: Freescale Semiconductor Technical Data Gallium Arsenide CATV Integrated Amplifier Module LIFETIME BUY Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection • GaAs FET Transistor Technology

Contextual Info: MMBF4416LT1 Preferred Device JFET VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features • Pb−Free Package is Available 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 30 Vdc Drain−Gate Voltage VDG 30 Vdc Gate−Source Voltage

MMBF4416LT1

Abstract: MMBF4416LT1G FR 220
Contextual Info: MMBF4416LT1 Preferred Device JFET VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features • Pb−Free Package is Available 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 30 Vdc Drain−Gate Voltage VDG 30 Vdc Gate−Source Voltage

Contextual Info: MMBF5484LT1 Preferred Device JFET Transistor N−Channel Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating 2 SOURCE Symbol Value Unit VDG 25 Vdc VGS r 25 Vdc Forward Gate Current IG(f) 10 mAdc Continuous Device Dissipation at or Below

BSP230

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSP230 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1995 Apr 07 File under Discrete Semiconductors, SC13b 1997 Jun 17 Philips Semiconductors Product specification P-channel enhancement mode

A83A marking

Abstract: 113A db 435A 95A 640 marking 113a LTE21009R LTE21009RA transistor 81 110 w 85 MARKING 41B marking code 41b
Contextual Info: -7^33-0^ LTE21009R LT E 21009R A ,{ PHILIPS INTERNATIONAL StE D • 7110fi2b 0041,218 Rbfl ■ PHIN MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor fo r use in common-emitter class-A linear power amplifiers up to 4.2 GHz. Diffused em itter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich

T0254AA

Contextual Info: 013^13^ 0 0 0 2 ^ 5 7Tb SflE D SEMTECH CORP POWER MOSFET IN HERMETIC ISOLATED T0254AA PACKAGE SM2F151* SM2F351* SM2F251* SM2F451* These devices offer the latest ruggedized M O SFET transistor die mounted in isolated and hermetically sealed metal packages. The standard M O SFET characteristics of very low

vgm5

Abstract: GS63 sharp lcd 21 pins
Contextual Info: Technical Document LCD Specification LCD Group LS028B7UX01 LCD Module Product Specification June 2007 Transflective 240 x 400 portrait-mode LCD Module featuring high integration and wide viewing angles. Full Specifications Listing. RECORDS OF REVISION MODEL No.: LS028B7UX01

LS028B7UX01

Abstract: GS63 ls028 lcd sharp transflective Note10-3
Contextual Info: Technical Document LCD Specification LCD Group LS028B7UX01 LCD Module Product Specification June 2007 Transflective 240 x 400 portrait-mode LCD Module featuring high integration and wide viewing angles. Full Specifications Listing. RECORDS OF REVISION MODEL No.: LS028B7UX01

FR07* diode

Abstract: FR07
Contextual Info: j pj j-0 f flQfjonO I Provisional Data Sheet No. PD-9.418A IOR Rectifier HEXFET POWER MOSFET IRFN450 N - CHA N N E L Product Summary Part Number I 500 Volt, 0.415ft HEXFET H EXFET technology is the key to International Rectifier’s advanced line of power M O S F E T transistors.The effi­

HXTR-5103

Abstract: HXTR-5101 it 5001 HXTR-5001 S21E
Contextual Info: LINEAR POWER TRANSISTOR CHIP COMPONENTS HXTR-5001 CIRCUITS H E W L E T T PACKARD Features INTEGRATED HIGH P1dB LINEAR POWER 23 dBm Typical at 2 GHz 22 dBm Typical at 4 GHz HIGH P1dB GAIN 13.5 dB Typical at 2 GHz 8.0 dB Typical at 4 GHz LOW DISTORTION FOR HYBRID