80V P-CHANNEL MOSFET Search Results

FDD3510H

Contextual Info: FDD3510H Dual N & P-Channel PowerTrench MOSFET N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, 190mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 80mΩ at VGS = 10V, ID = 4.3A MOSFETs are produced using Fairchild Semiconductor’s

Contextual Info: FDD3510H Dual N & P-Channel PowerTrench MOSFET N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, 190mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement ̈ Max rDS on = 80mΩ at VGS = 10V, ID = 4.3A MOSFETs are produced using Fairchild Semiconductor’s

IRF9540

Abstract: IRF9542 to220ab package TA17521 IRF9541 IRF9542 IRF9543 RF1S9540 RF1S9540SM
Contextual Info: IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, RF1S9540SM Semiconductor -15A and -19A, -80V and -100V, 0.20 and 0.30 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -15A and -19A, -80V and -100V These are P-Channel enhancement mode silicon gate

STS3C2F80

Contextual Info: STS3C2F80 N-CHANNEL 80V - 0.069 Ω - 3A SO-8 P-CHANNEL 80V - 0.20 Ω - 2.3A SO-8 STripFET II POWER MOSFET TYPE STS3C2F80 N-Channel STS3C2F80(P-Channel) • ■ ■ VDSS RDS(on) ID 80 V 80 V < 0.08 Ω < 0.25 Ω 3A 2.3 A TYPICAL RDS(on) (N-Channel) = 0.069 Ω

STS3C2F80

Abstract: MOSFET T
Contextual Info: STS3C2F80 N-CHANNEL 80V - 0.069 Ω - 3A SO-8 P-CHANNEL 80V - 0.20 Ω - 2.3A SO-8 STripFET II POWER MOSFET TYPE STS3C2F80 N-Channel STS3C2F80(P-Channel) • ■ ■ VDSS RDS(on) ID 80 V 80 V < 0.08 Ω < 0.25 Ω 3A 2.3 A TYPICAL RDS(on) (N-Channel) = 0.069 Ω

an7254

Abstract: RFL1P10 RFL1P08
Contextual Info: RFL1P08, RFL1P10 Semiconductor 1A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs July 1998 Features Description • 1A, -80V and -100V • Linear Transfer Characteristics These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such

Contextual Info: RFM6P08, RFM6P10, RFP6P08, RFP6P10 -6A, -80V and -100V, 0.6 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -6A,-80V and-100V These are P-Channel enhancem ent mode silicon gate power field effect transistors designed for high speed appli­

RFK25

Abstract: RFK25P10 DRA 402 DIODE
Contextual Info: y*Rg*s RFH25P08, RFH25P10, RFK25P08, RFK25P10 -25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs September 1998 Features Description • -25A,-100V and-80V These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such

f9530

Contextual Info: *f*53S IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM 10A and -12A, -80V and -100V, 0.3 and 0.4 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -10A and -12A, -80V and -100V • High Input Impedance These are P-Channel enhancement mode silicon gate

Contextual Info: IRF9130, IRF9131, IRF9132, IRF9133 -10A and -12A, -80V and -100V, 0.30 and 0.40 Ohm, P-Channel Power MOSFETs July 1998 Description Features -10A and -12A, -80V and -100V These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IRF9540

Contextual Info: *f*32S IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, RF1S9540SM -15A and -19A, -80V and -100V, 0.20 and 0.30 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -15A and-19A ,-80V and-100V • High Input Impedance These are P-Channel enhancement mode silicon gate

RFK25P10

Contextual Info: i., One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. RFH25P08, RFH25P10, RFK25P08, RFK25P10 -25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs Features Description • -25A,-100V and-80V These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such

TA17521

Abstract: IRF9140
Contextual Info: HAJims S IRF9140, IRF9141, IRF9142, IRF9143 Semiconductor y y -19A and -15A, -80V and -100V, 0.20 and 0.30 Ohm, P-Channel Power MOSFETs November 1997 Features Description • -19A and -15A, -80V and -100V • High Input Impedance These are P-Channel enhancement mode silicon gate

RFP2P10

Abstract: RFP2P08 TB334
Contextual Info: RFP2P08, RFP2P10 Semiconductor Data Sheet October 1998 -2A, -80V and -100V, 3.500 Ohm, P-Channel Power MOSFETs Features These are P-Channel enhancement mode silicon gate • rDS ON = 3.500Ω File Number 2870.1 • -2A, -80V and -100V [ /Title power field effect transistors designed for applications such

IRF9150

Contextual Info: IRF9150, IRF9151 HARRIS S E M I C O N D U C T O R -25A, -80V and -100V, 0.150 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -25A,-80V and-100V These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IRF9530

Abstract: IRF9531 IRF9530 mosfet
Contextual Info: S E M I C O N D U C T O R IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM 10A and -12A, -80V and -100V, 0.3 and 0.4 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -10A and -12A, -80V and -100V These are P-Channel enhancement mode silicon gate

IRFD9110

Abstract: IRFD9113 TA17541 TB334
Contextual Info: IRFD9110, IRFD9113 HARRIS S E M I C O N D U C T O R -0.6A and -0.7A, -80V and -100V, 1.2 and 1.6 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -0.6A and-0.7A ,-80V and-100V • High Input Impedance These are P-Channel enhancement mode silicon gate

IRF530

Abstract: IR IRF532 IRF531 OF IRF530 TA17411 f531 RF1S540 RF1S540SM9A irf532 rf1s530sm
Contextual Info: P *3 3 S IRF530, IRF531, IRF532, IRF533, RF1S530, RF1S530SM 12A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, N-Channel Power MOSFETs juiy 1998 Features Description • 12A and 14A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate

irf9140

Contextual Info: IRF9140, IRF9141, IRF9142, IRF9143 HARRIS S E M I C O N D U C T O R •19A and -15A, -80V and -100V, 0.20 and 0.30 Ohm, P-Channel Power MOSFETs November 1997 Features Description • -1 9A and -1 5A, -80V and -1 00V • High Input Im pedance These are P-Channel enhancement mode silicon gate

Contextual Info: H a r r IRFF9130, IRFF9131, IRFF9132, IRFF9133 i s s e m i c o n d u c t o r -5.5A and -6.5A, -80V and -100V, 0.30 and 0.40 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -5.5A and-6.5A ,-80V and-100V These are P-Channel enhancement mode silicon gate

irf9530

Abstract: irf9532 JEDEC TO-263A IRF9531
Contextual Info: H A F R F R IS S E M I C O N D U C T O R IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM 10A and -12A, -80V and -100V, 0.3 and 0.4 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -10A and -12A, -80V and -100V These are P-Channel enhancement mode silicon gate

Contextual Info: IRFD9110, IRFD9113 S E M I C O N D U C T O R -0.6A and -0.7A, -80V and -100V, 1.2 and 1.6 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -0.6A and -0.7A, -80V and -100V These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IRF9511

Abstract: IRF9510 IRF9513 IRF9510 harris
Contextual Info: IRF9510, IRF9511, IRF9512, IRF9513 S E M I C O N D U C T O R -2.5A and -3.0A, -80V and -100V, 1.2 and 1.6 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -2.5A and -3.0A, -80V and -100V These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

FD9110

Abstract: FD911
Contextual Info: IRFD9110, IRFD9113 HARRIS S E M I C O N D U C T O R -0.6A and -0.7A, -80V and -100V, 1.2 and 1.6 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -0.6A and -0.7A, -80V and -100V These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power