80US Search Results

Contextual Info: RADIALL TECHNICAL Département COAXIAL j> réservons I* droh d'apportar tout* modification Jugé« uti 10t. Hua Phtttbart « M m Z ont M h M i Ouest 9311« - H08NV-80US-BCHS Téléphone : 854^8040 NOTICE TECHNIQUE DATA TITLE TITRE R ROUND HERMETICALLY STALED

SF1154

Abstract: DC550 alcoa electrical joint compound LS2037 dow corning 732 dissipator presspak C770 C770A Alcoa
Contextual Info: INVERTER THYRISTOR C770 & C770A SPCO 77mm / 1800V / 60-80us Disc-type ceramic PRESSPAK package Type C770 reverse blocking thyristor is suitable for inverter applications.The silicon junction is manufactured by the proven multi-diffusion process and utilizes the exclusive involute gate

SF1154

Abstract: dow corning 732 dissipator C770 C770A Alcoa #2 Electrical Joint Compound alcoa electrical joint compound 60-80U
Contextual Info: INVERTER THYRISTO R C770 & C770A 77mm / 1800V / 60-80us Type C770 reverse blocking thyristor is suitable for inverter applications.The silicon junction is manufactured by the proven multi-diffusion process and utilizes the exclusive involute gate structure.It is supplied in an industry accepted disc-type package , ready to mount using

Contextual Info: FDMA8878 Single N-Channel Power Trench MOSFET 30 V, 9.0 A, 16 mΩ Features General Description „ Max rDS on = 16 mΩ at VGS = 10 V, ID = 9.0 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has

IRGPS4067

Abstract: irgps4067d CI 4000 J500 IRGPS IRGPS4067DPBF
Contextual Info: PD - 97736 IRGPS4067DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features •         Low VCE on Trench IGBT Technology Low Switching Losses 5 s SCSOA Square RBSOA 100% of The Parts Tested for ILM 

Contextual Info: Datasheet 4-wire Resistive Touch Screen Controller BU21029MUV ●General Description Unlike most resistive touch screen controllers, the BU21029MUV 4-wire resistive touch-screen controller can generate data that enables dual touch detection. The Host processor can use this data to detect single

marking P32 transistor

Abstract: D24N
Contextual Info: ULE Series www.murata-ps.com s Isolated, High Density, Eighth-Brick 1.25–20 Amp, DC/DC Converters Typical unit The ULE Series "Eighth-Brick" DC/DC Converters are high-current isolated power converters designed for use in high-density system boards. FEATURES

Contextual Info: BU BUF08832 F08 832 SBOS476C – AUGUST 2009 – REVISED JULY 2011 www.ti.com Programmable Gamma-Voltage Generator and High Slew Rate VCOM with Integrated Two-Bank Memory Check for Samples: BUF08832 FEATURES DESCRIPTION • • • • • • The BUF08832 offers eight programmable gamma

Contextual Info: BUF16821 BU F16 821 SBOS428C – JULY 2008 – REVISED JULY 2011 www.ti.com Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory Check for Samples: BUF16821 FEATURES DESCRIPTION • • • • • The BUF16821 offers 16 programmable gamma

m201un02

Abstract: m201un02 lcd panel pin out D4800 AUO lcd module FI-X30S-H FI-XB30SL-HF10 AUO lcd driver "failure rate" lcd g1 connector auo optronics lcd tft
Contextual Info: Spec. No.: DDPM-UN02-2 Version: 0.1 Total pages: 24 Date: 2003-Aug-15 AU OPTRONICS CORPORATION Product Specifications 20.1” UXGA Color TFT-LCD Module Model Name: M201UN02 V.2 Approved by Prepared by DDBU Marketing Division / AU Optronics Croporation Customer

Diode Gfg 75a

Abstract: P2HM755HA PDM755HA p2hm755h
Contextual Info: PDM755HA P2HM755HA MOSFET 75A 500V P2HM755HA P2HM755HA PDM755HA 108.0 108.0 質量 Approximate Weight :220g 質量 Approximate Weight :220g •最大定格 Maximum Ratings 項 目 Rating ドレイン・ソース間電圧 VDSS Drain-Source Voltage ゲート・ソース間電圧

TH05-3H103F

Contextual Info: Datasheet R2A20055NS R03DS0074EJ0100 Rev.1.00 May 7, 2013 Lithium-Ion Battery Charger IC Description The R2A20055NS is a semiconductor integrated circuit designed for Lithium-ion battery chargers at spacelimited portable applications. The R2A20055NS simply controls to charge a battery with a small number of

ST7093A

Abstract: sitronix 2x16 lcd character ST7093 COM16 SEG80 2x16 alphanumeric lcd db3 531 LCD ALPHANUMERIC sitronix c code
Contextual Info: ST Sitronix ST7093 26 COM / 80 SEG LCD CONTROLLER/DRIVER FEATURES z CGROM :10240 bits 256chars 5 x 8 dots z z z z z z z CGRAM :320 bits(8 chars 5 x 8 dots) DDRAM :64 bytes(16 x 4 ) ICONRAM :80 bits Low power operation support: - 2.4 to 3.6V Wide range of LCD driver power

TAG 8510

Abstract: 5.1 audio amplifier STV-5700 STV0684 IS1612 VC5700 134E6 48LCC VC5700V048 VC6700V048
Contextual Info: VC700 2.0 MegaPixel Digital Video CMOS Image Sensor PRODUCT PREVIEW Features Applications • 1600 x 1200 resolution 2 megapixel ● Digital Still Cameras ■ 1/2 inch format lens compatible ● Barcode Reading ■ 3v3 supply Technical specifications ■ i2c control

Contextual Info: BUF08832 BU F08 832 www.ti.com . SBOS476B – AUGUST 2009 – REVISED SEPTEMBER 2009 Programmable Gamma-Voltage Generator and

Contextual Info: PD - 94925B IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.

R14 P1F

Abstract: N-333 PP7F 1BE3 P53 transistor A1-U1-U17-A17 3LH30 zz12
Contextual Info: TOSHIBA Original CMOS 32-Bit Microcontroller TLCS-900/H1 Series TMP92CF26AXBG Semiconductor Company Preface Thank you very much for making use of Toshiba microcomputer LSIs. Before use this LSI, refer the section, “Points of Note and Restrictions”. TMP92CF26A

IRG7PH42UD1M

Abstract: 30A, 600v RECTIFIER DIODE
Contextual Info: IRG7PH42UD1M INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode

CMP0817BA0

Abstract: CMP0817BA
Contextual Info: CMP0817BA0-I CMOS LPRAM Document Title 512K x 16 bit Super Low Power and Low Voltage Full CMOS RAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft May. 2nd, 2004 Final 0.1 Added G Pb-Free and H(Pb-Free & Halogen Free) descriptions

Contextual Info: CMP0817BAx-E CMOS LPRAM Document Title 512K x 16 bit Super Low Power and Low Voltage Full CMOS RAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Dec. 22nd, 2003 Preliminary 0.1 Add tCP=10ns in AC characteristics Minor Changes Mar. 10th, 2004

5S70

Contextual Info: 2 SE D fc^QMS? 0 0 0 0 3 7 3 ON CHIP SYSTEMS t. T-TS-S CURTIS ELECTROMUSIC SPECIALTIES 110 Highland Ave. Los Gatos, CA USA 408) 395-3350 TLX 499-2868 C E M 5 5 7 0 BUS CONTROLLED SIGNAL PROCESSOR Preliminary, January 1987 Description ' The CEM 5570 is an audio signal processing block controllable

Contextual Info: HI-6130 / HI-6131 / HI-6132 MIL-STD-1553 / MIL-STD-1760 3.3V BC / MT / RT Multi-Terminal Device GENERAL DESCPIPTION • The 3.3V CMOS HI-613x device provides a complete single- or multi-function interface between a host processor and MIL-STD-1553B bus. Each IC contains

Contextual Info: FDB075N15A_F085 N-Channel Power Trench MOSFET 150V, 110A, 7.5mΩ D D Features „ Typ rDS on = 5.5mΩ at VGS = 10V, ID = 80A „ Typ Qg(tot) = 80nC at VGS = 10V, ID = 80A G „ UIS Capability „ RoHS Compliant G „ Qualified to AEC Q101 TO-263 FDB SERIES Applications

Contextual Info: IRGP30B120KD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Motor Control Co-Pack IGBT C Features • • • • • • • • VCES = 1200V Low VCE on Non Punch Through (NPT) Technology Low Diode VF (1.76V Typical @ 25A & 25°C)