80NS Search Results

ta25 du14

Contextual Info: ST1641OOOAG1 -xxLVG 144-PIN SO-DIMMS 1M X 64 Bits DRAM SO-DIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: *R A C *C A C ‘ rc STI. •-60LVG 60ns 15ns 110ns STI. •-70LVG 70ns 20ns 130ns STI. •-80LVG 80ns 20ns 150ns The Simple Technology STI641000AG1 is a 1M x 64 bits

jeida+dram+88+pin

Abstract: jeida 88 pin jeida dram 88 pin
Contextual Info: STI321000C1 -xxVx 88-PIN CARDS 1M X 32 DRAM Card FEATURES • Performance range: ^RAC ^CAC *RC STI321000C1-60Vx 60ns 15ns 110ns STI32100OC1-7OVx 70ns 18ns 130ns STI321000C1-80Vx 80ns 20ns 150ns The Simple Technology STI321000C1 is a 1M bit x 32 Dynamic RAM high density memory card. The Simple Technology

Contextual Info: STI338000 72-PIN SIMMS 8M X 33 Bits DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: *RAC ^CAC I rc STI338000-60 60ns 15ns 110ns STI338000-70 70ns 20ns 130ns STI338000-80 80ns 20ns 150ns The Simple Technology STI338000 is a 8M x 33 bits Dynamic

Contextual Info: STI32256 72-PIN SIMMS 256K X 32 DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: ^RAC ^CAC ^RC STI32256-60 60ns 15ns 110ns STI32 2 56-70 70ns 20ns 130ns STI32256-80 80ns 20ns 150ns The Simple Technology STI32256 is a 256K bit x 32 Dynamic

M29W008A

Abstract: M29W008AB M29W008AT
Contextual Info: M29W008AT M29W008AB 8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 80ns ■ PROGRAMMING TIME: 10µs typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte

LM119

Abstract: LM119-LM219-LM319 LM111 LM219 LM219N LM319 LM119-LM219-LM319 window
Contextual Info: LM119 LM219 - LM319 HIGH SPEED DUAL COMPARATORS • TWO INDEPENDENT COMPARATORS ■ SUPPLY VOLTAGE : +5V TO ±15V ■ TYPICALLY 80ns RESPONSE TIME AT ±15V ■ MINIMUM FAN-OUT OF 2 EACH SIDE ■ MAXIMUM INPUT CURRENT OF 1µA OVER OPERATING TEMPERATURE RANGE

2SK1036

Contextual Info: P o w e r F-MOS FET 2SK10 3 6 2S K 1036 Silicon N-channel Power F-M OS FET P ackage Dimensions • F eatures • Low ON resistance RCs on : RDs (on) = 0.211 (typ.) • High switching rate : tf = 80ns (typ.) • No secondary breakdown Unit: mm Di uvJ i o

M27W201

Abstract: AN620 M27C2001 PLCC32 TSOP32 Application Note EPROM Programming
Contextual Info: . . SGS-THOMSON k7 # . M27W201 RfilDÊlMSJlilLIlÊ'inEORODtgS 2 Mbit 256Kb x 8 Low Voltage OTP EPROM • LOW VOLTAGE READ OPERATION: 2.7V to 3.6V ■ FAST ACCESS TIME: - 70ns at Vcc = 3.0V to 3.6V - 80ns at Vcc = 2.7V to 3.6V ■ LOW POWER CONSUMPTION: - Active Current 15mA

2SA2088

Abstract: 2SC5876 T106
Contextual Info: Medium power transistor 60V, 0.5A 2SC5876 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)

100NS

Abstract: 100PF 40NS MAX4278
Contextual Info: * MAX4278 SMALL-SIGNAL RESPONSE AVCL=+2 * 4278STRA.CIR XAR1 3 2 7 4 6 MAX4278 * +IN GND VCC VEE OUT VP 7 0 5V VN 4 0 -5V *VIN 3 0 PULSE -2V 2V 30ns 1N 1N 40NS 80Ns VIN 3 0 PULSE(-100MV 100MV 30NS 1N 1N 40NS 80NS) VSHORT 2 0 0V RL 6 0 100 *CL 6 0 100PF .OPTIONS RELTOL=.01

100NS

Abstract: 100PF 40NS MAX4178
Contextual Info: * MAX4178 LARGE-SIGNAL RESPONSE AVCL=+1 * 4178LTRAN.CIR XAR1 3 2 7 4 6 MAX4178 * +IN GND VCC VEE OUT VP 7 0 5V VN 4 0 -5V VIN 3 0 PULSE -2V 2V 30ns 1N 1N 40NS 80Ns VSHORT 2 0 0V *VIN 3 0 PULSE(-10MV 10MV .02us 2N 2N .12us) RL 6 0 100 *CL 6 0 100PF .OPTIONS RELTOL=.01

smd diode marking code ax

Abstract: 10ETF12S 10ETF 10ETF10S AN-994 SMD-220 PCB FR-4 QUIETIR Series 10ETF12S st smd marking code et
Contextual Info: I2149 rev. A 11/99 QUIETIR Series 10ETF.S FAST SOFT RECOVERY RECTIFIER DIODE VF < 1.33V @ 10A trr = 80ns VRRM 1000 to 1200V Description/Features The 10ETF.S fast soft recovery QUIETIR rectifier series has been optimized for combined short reverse recovery time and low forward voltage

10ETF12F

Contextual Info: Bulletin I2194 12/04 QUIETIR Series 10ETF12FPPbF FAST SOFT RECOVERY RECTIFIER DIODE Lead-Free "PbF" suffix VF < 1.33V @ 10A t rr = 80ns VRRM = 1200V Description/ Features The 10ETF12FPPbF fast soft recovery QUIETIR rectifier series has been optimized for combined

Contextual Info: Bulletin I2165 06/03 QUIETIR Series 10ETF.FP FAST SOFT RECOVERY RECTIFIER DIODE VF < 1.33V @ 10A trr = 80ns VRRM 1000 , 1200V Description/ Features The 10ETF.FP fast soft recovery QUIETIR rectifier series has been optimized for combined short reverse recovery time and low forward

Contextual Info: I2126 rev. B 10/99 QUIETIR Series 8EWF.S SURFACE MOUNTABLE FAST SOFT RECOVERY DIODE VF < 1.3V @ 8A trr = 80ns VRRM 1000 to 1200V Description/Features The 8EWF.S fast soft recovery QUIET IR rectifier series has been optimized for combined short reverse recovery time, low forward voltage drop

Contextual Info: lowprofile ECL100K COMPATIBLE LOGIC DELAY MODULE # # # # # # ECL 100K in put and outputs Delays stable and precise 24-pin DIP package .375 high Available in delays fro m 16 to 80ns 12.5% taps — each isolated and w ith 70 ECL DC fan-out capacity Fast rise tim e on all outputs

AD848

Contextual Info: ANALOG DEVICES FEATURES 725MHz Gain Bandwidth - AD849 175MHz Gain Bandwidth - AD848 4.8mA Supply Current 300V/|is Slew Rate 80ns Settling Time to 0.1% for a 10V Step - AD849 Differential Gain: AD848 = 0.07%, AD849 = 0.08% Differential Phase: AD848 = 0.08°, AD849 = 0.04°

NQPACK080SD-ND

Abstract: YQPACK080SD FLX100 HQPACK080SD
Contextual Info: M3T-FLX-80NSD Converter for Connecting 100-core Flexible Board FLX100 to 80-pin 0.5mm-pitch LQFP External View and Dimensions Function The M3T-FLX-80NSD is a converter for connecting the FLX100 100-core flexible board to a foot pattern of an 80-pin 0.5mm-pitch

Contextual Info: Medium power transistor 60V, 0.5A AEC-Q101 Qualified 2SC5876FRA 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)

9373

Abstract: EDI7F4342MC LH28F016SU
Contextual Info: EDI7F4342MC 4x2Megx32 Features 4x2Megx32 Flash Module • 4 x 2 Meg x 32 • Based on Sharp's LH28F016SU Flash Device • Fast Read Access Time - 80ns • 5- Volt-Only Reprogramming • Low Power Dissipation • 60mA per Device Active Current • 10µA per Device CMOS Standby Current

db3 c705

Abstract: AD7248 AD639 DB711 db810 AD7245 12-Bit Digital-to-Analog Converter dip-20 5AGND
Contextual Info: ANALOG DEVICES FEATURES 12-Bit C M O S DAC with Output Amplifier and Reference Parallel Loading Structure: AD7245 8 + 4 Loading Structure: AD7248 Single or Dual Supply Operation Fast Digital Interface (80ns W R Pulse) Low Power (65mW typ) 0.3”, Skinny, 20- and 24-Pin DIP

EDI7F4342MC

Abstract: LH28F016SU a1458
Contextual Info: White Electronic Designs EDI7F4342MC 4x2Mx32 FLASH MODULE DESCRIPTION FEATURES n 4x2Mx32 n Based on Sharp's LH28F016SU Flash Device n Fast Read Access Time - 80ns n 5V Only Reprogramming n Low Power Dissipation n 60mA per Device Active Current n 10µA per Device CMOS Standby Current

Contextual Info: RURG3060CC_F085 30A, 600V Ultrafast Rectifier Features 30A, 600V Ultrafast Rectifier • High Speed Switching trr=60ns(Typ. @ IF=30A ) The RURG3060_F085 is an dual ultrafast diode with soft recovery characteristics (trr<80ns). It has low forward voltage drop and is silicon nitride passivated ionimplanted epitaxial planar construction.

Contextual Info: M27C320 32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM PRELIMINARY DATA 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 80ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 32 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 70mA at 8MHz – Stand-by Current 100µA