80MEV Search Results

25A45

Abstract: UC1843x
Contextual Info: Standard Products ACT5031 RadHard High Speed PWM Controller www.aeroflex.com/RadHard March 21, 2005 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ a n i y r Radiation Hardness: - Total Dose 100 KRad Si - Single Event Upset 80MeV-cm2 /mg

306RP

Abstract: no11 "Analog Multiplexer" multiplexer 28 pin
Contextual Info: 306RP RADIATION HARDENED 16-CHANNEL CMOS ANALOG MULTIPLEXER V+ 1 28 COM N.C. V- N.C. NO8 NO16 NO7 NO15 NO6 NO14 NO5 SEi 306RP NO13 NO12 NO4 NO3 NO11 NO2 NO10 NO1 NO9 EN GND A0 N.C. A3 A1 14 15 A2 FEATURES:  • RAD-PAK technology radiation-hardened against

MSI Logic

Abstract: Structure of D flip-flop UNITED TECHNOLOGIES MICROELECTRONICS CENTER "radhard" overview Upset
Contextual Info: Single Event Upset Design Techniques for UTMC’s RadHard MSI Logic Family Overview A Single Event Upset SEU is the result of an ion transitioning through a semiconductor structure and depositing charge on a critical circuit node within that structure. In a CMOS logic circuit,

AT68166FT

Abstract: 5962-06229 AT60142FT MQFP68 7531E o3752
Contextual Info: Features • • • • • • • • • • • • • • • 16 Mbit SRAM Multi Chip Module Allows 32-, 16- or 8-bit access configuration Operating Voltage: 3.3V + 0.3V, 5V Tolerant Access Time: – 25 ns, 20 ns – 18 ns preliminary information

Contextual Info: Radiation Hardened, High Performance Industry Standard Single-Ended Current Mode PWM Controller The ISL7884xASRH is a high performance, radiation hardened drop-in replacement for the popular 28C4x and 18C4x PWM controllers suitable for a wide range of power conversion

5962R0622908VXC

Abstract: AT68166H 5962-0622908QXC 5962R0622906VYC 5962-0622906QYC AT68166H-YM20-E 7842C AT68166H-YS18-E 5962-0622906VYC
Contextual Info: Features • • • • • • • • • • • • • • • 16 Mbit SRAM Multi Chip Module Allows 32-, 16- or 8-bit access configuration Operating Voltage: 3.3V + 0.3V Access Time – 20 ns – 18 ns Power Consumption – Active: 620 mW per byte Max @ 18ns - 415 mW per byte (Max) @ 50ns (1)

IR2110 equivalent

Abstract: ac control using ir2110 and mosfet IR2110 application note IS-2100ARH IS2100ARH ac control using ir2110 IR2110 HIP2500 AN IR2110 IS-2100
Contextual Info: Single Event Testing of the IS-2100ARH Half Bridge Driver Introduction The intense heavy ion environment encountered in space applications can cause a variety of transient and destructive effects in analog circuits, including single-event latchup SEL , single-event upset (SEU) and single-event burnout (SEB). These effects can lead to

AT68166F-YS18SR

Abstract: AT68166f 5962-0622902VXC atmel 025 MQFP68 5962-06229 5962-0622902QXC 7747A AT60142FT AT68166F-YS18MQ
Contextual Info: Features • • • • • • • • • • • • • • • 16 Mbit SRAM Multi Chip Module Allows 32-, 16- or 8-bit access configuration Operating Voltage: 3.3V + 0.3V Access Time – 20 ns, 18 ns for AT68166F – <18 ns for AT68166G in development prototypes in Q4 2007

ISL78840ASEH

Abstract: 40MeV 5962R0724907VXC 5962R0724908VXC 5962R0724908V9A ISL78845
Contextual Info: Radiation Hardened, High Performance Industry Standard Single-Ended Current Mode PWM Controller ISL78840ASEH, ISL78841ASEH, ISL78843ASEH, ISL78845ASEH The ISL7884xASEH is a high performance, radiation hardened drop-in replacement for the popular 28C4x and 18C4x PWM

5962-0622905QYC

Abstract: 5962R0622905VYC 7843B AT68166HT MQFPT68 at68
Contextual Info: Features • • • • • • • • • • • • • • • 16 Mbit SRAM Multi Chip Module Allows 32-, 16- or 8-bit access configuration Operating Voltage: 3.3V + 0.3V, 5V Tolerant Access Time: – 25 ns – 20 ns – 18 ns preliminary information

5962-0622906

Abstract: 5962R0622906VYC 5962-0622906QYC 7842B 5962-0622906VYC AT68166H-18
Contextual Info: Features • • • • • • • • • • • • • • • 16 Mbit SRAM Multi Chip Module Allows 32-, 16- or 8-bit access configuration Operating Voltage: 3.3V + 0.3V Access Time – 20 ns – 18 ns Power Consumption – Active: 620 mW per byte Max @ 18ns - 415 mW per byte (Max) @ 50ns (1)

5962-0622906VYC

Contextual Info: Features • • • • • • • • • • • • • • • 16 Mbit SRAM Multi Chip Module Allows 32-, 16- or 8-bit access configuration Operating Voltage: 3.3V + 0.3V Access Time – 20 ns – 18 ns Power Consumption – Active: 620 mW per byte Max @ 18ns - 415 mW per byte (Max) @ 50ns (1)

Contextual Info: Features • • • • • • • • • • • • • • • • • • • • • • • • • Full Range of Matrices with up to 480K Gates 0.5 µm Drawn CMOS, 3 Metal Layers, Sea of Gates RAM and DPRAM Compilers Library Optimized for Synthesis, Floor Plan and Automatic Test Generation ATG

AT69170

Abstract: AT69170E 0x000000001 ATF280E FP18 7752a 0x55555
Contextual Info: Features • 4Mbits x1 Non Volatile Memory Designed to Store Field Programmable Gate • • • • • • • • • • • • • • • Arrays FPGAs Configurations In-System Programming (ISP) via Two-Wire Bus Simple Interface to SRAM FPGAs Compatible with Atmel AT40KEL040 and ATF280E FPGAs

RadHard-By-Design integrated circuit suppliers: A success story

Abstract: dsp radiation Radiation Tolerant DSP processor ORBIT SEMICONDUCTOR 90-nm CMOS standard cell library process technology Upset
Contextual Info: Space applications Military EMBEDDED SYSTEMS RadHard-By-Design integrated circuit suppliers: A success story By Anthony Jordan The telecommunications and defense industries demand ever increasing functionality in space-based equipment such as satellites, probes, and spacecraft.

5962-06229

Abstract: AT60142FT AT68166FT MQFP68
Contextual Info: Features • • • • • • • • • • • • • • • 16 Mbit SRAM Multi Chip Module Allows 32-, 16- or 8-bit access configuration Operating Voltage: 3.3V + 0.3V, 5V Tolerant Access Time: – 25 ns, 20 ns – 18 ns preliminary information

DC MOTOR DRIVE USING BUCK BOOST CONVERTER

Abstract: PWM5031 motors used in satellite communication
Contextual Info: FOR IMMEDIATE RELEASE: July 28, 2005 CONTACT: Teresa Farris MARCOM Manager Aeroflex Plainview 35 South Service Rd. Plainview, NY 11803 719-594-8035 voice 719-594-8468 (fax) Email: teresa.farris@aeroflex.com www.aeroflex.com/power AEROFLEX EXPANDS THEIR POWER PRODUCT FAMILY

atmel 0726

Abstract: atmel 0936 Atmel 0347 MG2044P MG2142P MG2270P 4116L AT/atmel 0936
Contextual Info: Features • • • • • • • • • • • • • • • • • • • • • • • • • Full Range of Matrices up to 270K Gates 0.5 µm Drawn CMOS, 3 Metal Layers, Sea of Gates RAM and DPRAM Compilers Library Optimized for Synthesis, Floor Plan and Automatic Test Generation ATG

AT68166

Abstract: 5962R0622905VYC
Contextual Info: Features • • • • • • • • • • • • • • • 16 Mbit SRAM Multi Chip Module Allows 32-, 16- or 8-bit access configuration Operating Voltage: 3.3V + 0.3V, 5V Tolerant Access Time: – 25 ns – 20 ns – 18 ns preliminary information

AT68166F-20

Abstract: AT697E AT68166F-YS18-E MQFPT68 5962-06229 AT60142F AT60142FT AT68166F smd a10 5962R0622904VYC
Contextual Info: Features • • • • • • • • • • • • • • • 16 Mbit SRAM Multi Chip Module Allows 32-, 16- or 8-bit access configuration Operating Voltage: 3.3V + 0.3V Access Time – 20 ns, 18 ns for AT68166F Power Consumption – Active: 620 mW per byte Max @ 18ns - 415 mW per byte (Max) @ 50ns (1)

1000 microfarad 25v capacitor

Abstract: capacitor, 1000 microfarad IS-1009RH IS1009RH IS-1009 1 microfarad capacitor 100uF (M) capacitor filter capacitor cross reference k500 npn pnp Rf transistor bipolar cross reference
Contextual Info: Single Event Testing of the IS-1009RH Voltage Reference October 2000 Introduction The intense heavy ion environment encountered in space applications can cause a variety of transient and destructive effects in analog circuitry, including singleevent latchup SEL , single -event transient (SET) and single -event burnout

IS-139ASRH

Abstract: LM139 SN13 80MeV PF0300 is139a
Contextual Info: Single Event Testing of the IS-139ASRH Quad Comparator October 2000 Introduction The intense heavy ion environment encountered in space applications can cause a variety of transient and destructive effects in analog circuits, including single-event latchup SEL ,

at68166f

Abstract: MQFP68 5962-06229 AT60142F AT60142FT
Contextual Info: Features • • • • • • • • • • • • • • • 16 Mbit SRAM Multi Chip Module Allows 32-, 16- or 8-bit access configuration Operating Voltage: 3.3V + 0.3V Access Time – 20 ns, 18 ns for AT68166F Power Consumption – Active: 620 mW per byte Max @ 18ns - 415 mW per byte (Max) @ 50ns (1)

ATMEL 634

Abstract: atmel 946 atmel 044 AtMEL 624 MG2044E MG2091E MG2194E MG2265E MG2360E MG2480E
Contextual Info: Features • • • • • • • • • • • • • • • • • • • • • • • • • Full Range of Matrices with up to 480K Gates 0.5 µm Drawn CMOS, 3 Metal Layers, Sea of Gates RAM and DPRAM Compilers Library Optimized for Synthesis, Floor Plan and Automatic Test Generation ATG