8 PNP DARLINGTON Search Results

T6702

Abstract: complementary npn-pnp ZDT6702 IC1010 IC-175 DSA003725 ZETEX medium power complementary transistors
Contextual Info: SM-8 COMPLEMENTARY MEDIUM POWER DARLINGTON TRANSISTORS ZDT6702 ISSUE 2 – February 1997 C1 B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 8 LEAD SOT223 PARTMARKING DETAIL – T6702 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage VCBO 80

Contextual Info: SM-8 COMPLEMENTARY MEDIUM POWER DARLINGTON TRANSISTORS ZDT6702 ISSUE 2 – February 1997 C1 B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 8 LEAD SOT223 PARTMARKING DETAIL – T6702 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP Collector-Base Voltage VCBO 80 -80 V

BC450

Contextual Info: CRO BC450 PNP SILICON TRANSISTOR DESCRIPTION i > 4 .6 8 i O J 8 BC450 is PNP silicon planar transistor designed for use as high voltage driver and output transistor. Particularly suitable as power darlington drivers. ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage

DIODE 3LU

Abstract: D959 Q62702-D961 Q62702-D959 3lu diode BD 862 Diode 864
Contextual Info: " 2SC D • 023SbOS 0004417 1mSIEG r T-33“31. ; PNP Silicon Darlington Transistors SIEMENS Epibase BD 862 AKTIENGESELLSCHAF ° - ! p o w e r d arlin g to n transistors 1 5 W | BD 8 6 2 , BD 8 6 4 , and BD 8 6 6 are monolithic silicon PNP epibase power darlington transistors

SLA4391

Abstract: NPN/PNP transistor
Contextual Info: SLA4391 PNP + NPN Darlington H-bridge External dimensions A Absolute maximum ratings Unit NPN PNP 100 –100 100 –100 6 –6 5 –5 8 PW≤1ms, Du≤50% –8 (PW≤1ms, Du≤50%) 0.5 –0.5 5 (PW≤0.5ms, Du≤25%) 8 (PW≤10ms, single) 120 5 (Ta=25°C)

SLA4391

Contextual Info: SLA4391 PNP + NPN Darlington H-bridge External dimensions A Absolute maximum ratings Unit NPN PNP 100 –100 100 –100 6 –6 5 –5 8 PW≤1ms, Du≤50% –8 (PW≤1ms, Du≤50%) 0.5 –0.5 5 (PW≤0.5ms, Du≤25%) 8 (PW≤10ms, single) 120 5 (Ta=25°C)

2SB1181F5

Contextual Info: h z 7 > y X - $ t / T ransistors 2 S B 1 1 8 2 S B 1 1 8 2 S B 1 181 /2 S B 1 1 8 1 F5 Freq. Power Amp. 1 F 5 Epitaxial Planar PNP Silicon Darlington Transistors • V c e o = —8 0 V , h7 > y Z $ PNP 1 Dimensions Unit : mm lc = — 1A 2) h FEC0 iJ - 7 iJ t -(

Contextual Info: 2N6298 and 2N6299 PNP Darlington Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/540 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed PNP transistor is rated at 8 amps and is military qualified up to a JANTXV

M54586P

Abstract: m54586
Contextual Info: • bSMTflS? DD1S131 MITSUBISHI bn ■ MIT3 MITSUBISHI BIPOLAR DIGITAL ICs M54586P DGTL LOGIC 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY DESCRIPTION The 54586P, 8-channel source driver, consists of 8 NPN and 8 PNP source type darlington transistors connected to

Contextual Info: 2N6298 and 2N6299 PNP Darlington Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/540 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed PNP transistor is rated at 8 amps and is military qualified up to a JANTXV

229 transistor npn

Abstract: PNP avalanche transistor high gain PNP RF TRANSISTOR "dual TRANSISTORs" pnp npn SM-8 BIPOLAR TRANSISTOR darlington sot23 npn transistor pnp 1a high gain low voltage NPN transistor sot23 17 sot23 NPN TRANSISTORS LIST
Contextual Info: SHORTFORM TABLES INDEX Table No. Table D escription A: SOT23 BIPO LARTR AN SISTO R S: Page no. High Current SuperSO T npn /(pnp) 2 -6 2)a SuperSO T (npn) 2 -6 2)b SuperSO T (pnp) 2 -7 3) High Perfom ance Low Voltage (npn)/(pnp) 2 -8 4) High Perfom ance High Voltage (npn)/(pnp)

Contextual Info: SEMICONDUCTOR KTB2530 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH POWER AMPLIFIER DARLINGTON APPLICATION. FEATURES 2012. 8. 21 Revision No : 0 1/3

bdx340

Abstract: bdw 34 a mj 1001 6282 TIP-142 2N6284 BDV65 BDW93
Contextual Info: r 7z#j ^ SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL RÆoæ moi(gra(M[](gs POWER BIPOLAR EPITAXIAL BASE HIGH GAIN DARLINGTONS (Continued •c v CBO v CEO ptot Package Ty pe N PN h FE <C 1 VCE v C Esat lc ' 'B PNP m in (A) (V) (V) (W) 8 8 8 8 8 8 8 8 8 8 8

993 395 pnp npn

Abstract: bc237 smd sot23 package transistor TO-92 bc108 TRANSISTOR BC337 SMD 702 TRANSISTOR smd SOT23 2PB601AQ BC548 TRANSISTOR SMD bc548 TO-92 Bd135 smd 2PC945Q
Contextual Info: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page General purpose amplification and switching transistors Low-power transistors 2 5 – 23 26 Transistor arrays 7 – 29 29 29 Medium-power transistors 8 9 – 30 31 10

SLA6024

Abstract: PNP DARLINGTON 8 DRIVE
Contextual Info: SLA6024 PNP + NPN Darlington External dimensions A 3-phase motor drive Absolute maximum ratings NPN 60 60 6 8 12 PW≤1ms, Du≤50% — — 0.5 VCBO VCEO VEBO IC ICP IFEC IFECP IB Unit PNP –60 –60 –6 –8 –12 (PW≤1ms, Du≤50%) –8 –12 –0.5

sla6024

Contextual Info: SLA6024 PNP + NPN Darlington External dimensions A 3-phase motor drive Absolute maximum ratings NPN 60 60 6 8 12 PW≤1ms, Du≤50% — — 0.5 VCBO VCEO VEBO IC ICP IFEC IFECP IB Unit PNP –60 –60 –6 –8 –12 (PW≤1ms, Du≤50%) –8 –12 –0.5

Contextual Info: SEMICONDUCTOR MMBTA63/64 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. MAXIMUM RATING Ta=25 2008. 8. 29 Revision No : 5 1/2

sanken power transistor 2SA1216

Abstract: 2SC2922 SANKEN 2SC2922 sanken transistor sanken 2sc2922 Sanken 2SC2921 transistor 2sb1624 2sd2493 Sanken Transistor Mt 200 sanken 2sa1216 D01EC0 2sc2921 sanken
Contextual Info: DISCRETE DEVICES DISCRETE BIPOLAR POWER TRANSISTORS Part Numbers PNP NPN PD W VCEO (V) IC (A) 80 80 80 80 120 120 140 180 140 180 200 200 6 6 6 6 8 8 10 15 10 15 15 17 fT (MHz) hfe (min) PNP/NPN Package Standard, Single-Emitter Types 2SA1725 2SA1726 2SA1693

sanken power transistor 2SA1216

Abstract: 2SC2922 sanken transistor 2SC2922 SANKEN 2sc3263 sanken 2SA1186 SANKEN Sanken Transistor Mt 200 2SD2494 sanken power transistor 2sa1295 D01EC0 2sc2837
Contextual Info: DISCRETE DEVICES DISCRETE BIPOLAR POWER TRANSISTORS Part Numbers PNP NPN PD W VCEO (V) IC (A) 80 80 80 80 120 120 140 180 140 180 200 200 6 6 6 6 8 8 10 15 10 15 15 17 fT (MHz) hfe (min) PNP/NPN Package Standard, Single-Emitter Types 2SA1725 2SA1726 2SA1693

SE9401

Abstract: VCe-30V 435-1B24
Contextual Info: SE^OO SESkO] SESkOl ♦I Central Semiconductor Central Semiconductor Silicon PNP Transistor Darlington Power 1 4 8 -B Lamar S treet W est Babylon, N ew York 1 1 7 0 4 JEDEC T0-220 Case DESCRIPTION The CENTRAL SEMICONDUCTOR SE9*»00. 01, 02 are Silicon PNP Epitaxial Base, Monolithic

STA434A

Abstract: STA400
Contextual Info: STA434A PNP + NPN Darlington H-bridge External dimensions D Absolute maximum ratings ••• STA400 Ta=25°C Specification Symbol NPN PNP Unit VCBO 80 –60 V VCEO 60 –60 V VEBO 6 –6 V IC 4 –4 A ICP 8 (PW≤10ms, Du≤50%) –8 (PW≤10ms, Du≤50%)

SLA4390

Contextual Info: SLA4390 PNP + NPN Darlington H-bridge External dimensions A Absolute maximum ratings ••• SLA Ta=25°C Specification Symbol NPN PNP Unit VCBO 100 –100 V VCEO 100 –100 V VEBO 6 –6 V IC 5 –5 A ICP 8 (PW≤1ms, Du≤50%) –8 (PW≤1ms, Du≤50%)

zdt705

Abstract: T705 DSA003726
Contextual Info: SM-8 DUAL PNP MEDIUM POWER DARLINGTON TRANSISTORS ZDT705 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 SM-8 8 LEAD SOT223 PARTMARKING DETAIL – T705 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -140 V Collector-Emitter Voltage

SLA6020

Abstract: NPN/PNP transistor
Contextual Info: SLA6020 PNP + NPN Darlington 3-phase motor drive External dimensions A Absolute maximum ratings ••• SLA Ta=25°C Ratings Symbol NPN PNP Unit VCBO 100 –100 V VCEO 100 –100 V VEBO 6 –6 V IC 5 –5 A ICP 8 (PW≤1ms, Du≤50%) –8 (PW≤1ms, Du≤50%)