8 PIN SMD S3 Search Results

D9000007

Contextual Info: AS& AUSTIN SEMICONDUCTOR, INC. SRAM MT5C2568 883C 32K x 8 SRAM 32K x 8 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-88662 • MIL-STD-883 28-PIN SOJ 28-Pin DIP (D15/D10) FEATURES • • • • • Ultra high speed 12,15ns

smd transistor s3

Abstract: smd diode 949 transistor a 949 F11-SMD 8 pin SMD s3 949 datasheet s1 smd transistor smd diode s1 SMD Packages smd transistor S1
Contextual Info: STANDARD SAW PACKAGES F-11 SM-2 PIN # 1 2 3 4 FUNCTION Output/Input GND GND Input/Output PIN # 1 2 3 4 FUNCTION Output/Input Input/Output GND GND F-11SMD E SMD 5 x 5mm PIN # FUNCTION PIN # Output/Input GND GND Input/Output 2 6 4, 8 1 2 3 4 PIN # FUNCTION PIN #

Contextual Info: ASI EEPROM AS58C1001 A ustin S em iconductor, Inc. 128Kx 8 EEPROM PIN ASSIGNMENT EEPROM Memory Top View AVAILABLE AS MILITARY SPECIFICATIONS 32-Pin C F P (F & S F ) • SMD 5962-38267 • MIL-STD-883 RDY/BUSY\ A16 A 14 A12 A7 A6 A5 A4 A3 A2 Al A0 FEATURES

PD05

Abstract: Z15J
Contextual Info: CYM1420 =r-fCYPRESS 128K x 8 Static RAM Module Features Functional Description • High-density X-megabit SRAM module • High-speed CMOS SRAMs — Access time of 20 ns • 32-pin, 0.6-inch-wide DIP package • Low active power — 1.2W max. • FR4 SMD technology

S/KGF2701

Contextual Info: O K I electronic components KGF2701_ Wide-Band Amplifier for Microwave UHF-Band and PCS Frequencies GENERAL DESCRIPTION The KGF2701, housed in an SMD-type 8-pin ceramic package, is a two-stage amplifier that features flat and high gain over a wide range of frequencies, internal input and output matching,

CYM1420PD-35C

Abstract: CYM1420PD-45C PD05 Z15J
Contextual Info: CYM1420 V CYPRESS 128K x 8 Static RAM Module Features Functional Description • High-density 1-megabit SRAM module • High-speed CMOS SRAMs — Access time o f 20 ns • 32-pin, 0.6-inch-wide DIP package • Low active power — 1.2W max, • FR4 SMD technology

CYM1420PD-45C

Contextual Info: CYM1420 F/ CYPRESS 128K x 8 Static RAM Module Features Functional Description • High-density 1-megabit SRAM module • High-speed CMOS SRAMs — Access time of 2 0 ns • 32-pin, 0.6-inch-wide DIP package • Low active power — 1 .2 W max. • FR4 SMD technology

MS-24L244

Abstract: samsung u2 cable 3528 SMD Samsung LED smd diode U12 in4148 smd diode LCBHBT161M X4 DIODE SMD resistor 2012 2012 SMD resistor SMD resistor 334
Contextual Info: MODEL : S3C2400X 220Mhz No 1 2 3 4 5 Reference CN1 CN2 CON1 CON2 CON3 6 CON4 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 CON5, CON6 CON7 CON8 C1, C2, C3, C4, C5, C6, C7, C8, C17, C18, C19, C20, C21, C22, C23, C24, C25, C26, C37, C38,

samsung s3c2440 user manual

Abstract: schematic LG lcd backlight inverter samsung s3c2440 arm920t s3c2440 arm schematic lcd inverter samsung lg philips lcd ic scaler samsung s3c2440 arm920t core samsung lcd inverter schematic S3C2440 LCBHBT161M datasheet
Contextual Info: H/W Design Guide System Controller S3C2440A 32-Bit RISC Microprocessor October, 2007 REV 1.0 Confidential Proprietary of Samsung Electronics Co., Ltd Copyright 2007 Samsung Electronics, Inc. All Rights Reserved S3C2440A_H/W DESIGN GUIDE_REV 1.0 Important Notice

MPS-3117

Abstract: digital blood pressure circuit diagram samsung lcd monitor power supply circuit diagram MPS-3117-006G schematic diagram lcd monitor samsung digital blood pressure monitor circuit diagram blood pressure circuit schematic samsung lcd monitor circuit diagram MPS 3117 blood pressure circuit schematic and block diagram
Contextual Info: S3P8245 ARM Blood Pressure Monitor Revision 0.00 July 2010 Application Note  2010 Samsung Electronics Co., Ltd. All rights reserved. Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the

LM7805CV

Abstract: nec2501 HS0038 HS0038 IR sensor S3F84U8 HS0038 ir circuit HS0038 a3 hs0038 sensor 9013 SMD s3f84ua
Contextual Info: S3F84U8/UA Watt-Hour Meter Revision 0.00 July 2010 Application Note  2010 Samsung Electronics Co., Ltd. All rights reserved. Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the time of publication. Samsung assumes no

3528 LED warm white

Abstract: smd 3528 white 3528 LED smd 3528 led SMD led 3528 LED white SMD 3528 Smd 3528 heat generation led SMD 3528 NS3528WHEA-B1BP 000 smd diode ED
Contextual Info: 3528 Flash White Color SMD Type LED 3528 Size Flash White Color SMD Type LED Part Number : S3528WH-EA 2004. 12. 7 Composition Check Approval / / / / / / NiNEX NiNEX Co., Ltd. http://www.ninex.biz Head Quarter/ Factory: #449-12, Mogok-Dong, PyongTaek-Si, Kyongki-Do, Korea

S3-AA22X

Abstract: 2.1Ghz oscillator
Contextual Info: Sine Wave TCXO S3-AA22X Series Rev A S3-AA22X Series Frequency Range: 60 MHz to 2.1 GHz Description The S3-AA22X Series of temperature compensated quartz crystal oscillators provide a Sine Wave signal. Features Size, mm 14 x 17 I/O 8 pad Supply Voltage • Cover connected to ground

Contextual Info: Sine Wave TCXO S3-AA22X Series Rev - S3-AA22X Series Frequency Range: 10 MHz to 1.7 GHz Description The S3-AA22X Series of temperature compensated quartz crystal oscillators provide a Sine Wave signal. Features Size, mm 14 x 17 I/O 8 pad Supply Voltage • Wide frequency range – 10MHz to 1.7GHz

Contextual Info: Sine Wave TCXO S3-AA22X Series 0551B Rev C S3-AA22X Series Frequency Range: 200 MHz to 1.7 GHz Description The S3-AA22X Series of temperature compensated quartz crystal oscillators provide a Sine Wave signal. Features Size, mm 14 x 17 I/O 8 pad Supply Voltage

MTI150W40GC

Abstract: smd diode g6 S4 44 DIODE SMD
Contextual Info: GWM 180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications

Contextual Info: Bluetooth 4.0 Low Energy Single Mode Power-Optimized Class 1 SoC Module nBlue BR-LE4.0-S3A CC2541 TM AT HOME. AT WORK. ON THE ROAD. USING BLUETOOTH LOW ENERGY WIRELESS TECHNOLOGY MEANS TOTAL FREEDOM FROM THE CONSTRAINTS AND CLUTTER OF WIRES IN YOUR LIFE.

Contextual Info: Bluetooth 4.0 Low Energy Single Mode Power-Optimized Class 1 SoC Module TM nBlue BR-LE4.0-S3A CC2541 AT HOME. AT WORK. ON THE ROAD. USING BLUETOOTH LOW ENERGY WIRELESS TECHNOLOGY MEANS TOTAL FREEDOM FROM THE CONSTRAINTS AND CLUTTER OF WIRES IN YOUR LIFE.

smd diode code g3

Abstract: smd diode g6 DIODE S4 39 smd diode smd diode code g4 smd diode g5 smd diode g6 SMD MARKING CODE s4 starter/generator IF110 DIODE marking S4 06 SMD mosfet MARKING code TC
Contextual Info: GWM 180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications

Contextual Info: CRYSTAL CLOCK OSCILLATORS Data Sheet 0551B Rev. - Sine Wave TCXO S3-AA22X Series PATENT PENDING Description The S3-AA22X Series of temperature compensated quartz crystal oscillators provide a Sine Wave signal. Features • Wide frequency range – 10MHz to 1.7GHz

tcxo 10mhz dbc

Abstract: 2.1Ghz oscillator 1Mhz oscillator sine wave
Contextual Info: CRYSTAL CLOCK OSCILLATORS Data Sheet 0551B Rev. B Sine Wave TCXO S3-AA22X Series PATENT PENDING Description The S3-AA22X Series of temperature compensated quartz crystal oscillators provide a Sine Wave signal. Features • Wide frequency range – 200.0MHz to 2.1GHz

smd diode code mj

Abstract: smd diode code SL
Contextual Info: GWM 160-0055P3 Three phase full Bridge VDSS = 55 V ID25 = 160 A RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS

Diode smd s6 95

Abstract: DIODE S4 66 smd diode S6 48 Diode smd s6 46 Diode smd s6 68 Diode smd s4 95 SMD MARKING g5 DIODE 542 SMD smd diode code g3 smd diode g6
Contextual Info: GWM 100-01X1 Three phase full Bridge VDSS = 100 V = 90 A ID25 RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS 100

smd diode mj 19

Contextual Info: GWM 180-004X2 VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L+ Preliminary data G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications