8 K X 16 BIT Search Results

CY14B101LA-SZ45XI

Abstract: CY14B101LA-SZ25XI
Contextual Info: CY14B101LA CY14B101NA 1-Mbit 128K x 8/64K x 16 nvSRAM 1-Mbit (128 K x 8/64 K x 16) nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 128 K x 8 (CY14B101LA) or 64 K x 16 (CY14B101NA) ■ Hands off automatic STORE on power down with only a small

CY14a101

Abstract: CY14V101LA-BA45 CY14A101L
Contextual Info: CY14V101LA CY14V101NA 1 Mbit 128 K x 8/64 K x 16 nvSRAM 1 Mbit (128K x 8/64K x 16) nvSRAM Features Functional Description • 25 ns and 45 ns access times ■ Internally organized as 128 K x 8 (CY14V101LA) or 64 K x 16 (CY14V101NA) ■ Hands off automatic STORE on power down with only a small

CY14a101

Abstract: CY14A101L
Contextual Info: CY14V101LA CY14V101NA 1 Mbit 128 K x 8/64 K x 16 nvSRAM 1 Mbit (128K x 8/64K x 16) nvSRAM Features Functional Description • 25 ns and 45 ns access times ■ Internally organized as 128 K x 8 (CY14V101LA) or 64 K x 16 (CY14V101NA) ■ Hands off automatic STORE on power down with only a small

M410000002

Abstract: DL161 DL162 DL163 AM41DL1644DT
Contextual Info: PRELIMINARY Am41DL16x4D Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS

DS42514

Contextual Info: DS42514 Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL163D Bottom Boot 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/ 256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS

DS42515

Contextual Info: DS42515 Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL164D Bottom Boot 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/ 256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS

DS42546

Contextual Info: DS42546 Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL163D Top Boot 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/ 256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS

Contextual Info: CY14V104LA CY14V104NA 4-Mbit 512 K x 8 / 256 K x 16 nvSRAM Features Functional Description • 25 ns and 45 ns access times ■ Internally organized as 512 K x 8 (CY14V104LA) or 256 K x 16 (CY14V104NA) ■ Hands off automatic STORE on power down with only a small

80c535

Abstract: SAB83C515H-4J Wiring Diagram Siemens stt SAB80C515
Contextual Info: SIEMENS SAB 83C515H-3J / 83C515H-4J 8-Bit CMOS Microcontroller Advance Information SAB 83C515H-3J/83C515H-4J CMOS microcontroller with user programmable E2PROM • 8 K X 8 E2PROM SAB 83C515H-3J • 16-bit watchdog timer • 16 K x 8 E2PROM (SAB 83C515H-4J)

CY14B101LA-SZ45XI

Abstract: CY14B101LA-SZ25XI
Contextual Info: CY14B101LA CY14B101NA 1-Mbit 128 K x 8/64 K x 16 nvSRAM 1-Mbit (128 K x 8/64 K x 16) nvSRAM Features • Packages ❐ 32-Pin small-outline integrated circuit (SOIC) ❐ 44-/54-Pin thin small outline package (TSOP-II) ❐ 48-Pin shrink small-outline package (SSOP)

Contextual Info: CY14B108K, CY14B108M 8 Mbit 1024 K x 8/512 K x 16 nvSRAM with Real Time Clock Features • Watchdog timer ■ 25 ns and 45 ns access times ■ Clock alarm with programmable interrupts ■ Internally organized as 1024 K x 8 (CY14B108K) or 512 K × 16 (CY14B108M)

DS42516

Contextual Info: DS42516 Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL324D Bottom Boot 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/ 256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS

Nippon capacitors

Contextual Info: HB56UW272EJN Series, HB56UW264EJN Series HB56UW272EJN 16 MB Unbuffered EDO DRAM DIMM 2-Mword X 72-bit, 2 k Refresh, 1-Bank Module 9 pcs of 2 M X 8 Components HB56UW264EJN 16 MB Unbuffered EDO DRAM DIMM 2-Mword X 64-bit, 2 k Refresh, 1-Bank Module (8 pcs of 2 M X 8 Components)

DL322

Abstract: DL323 DL324
Contextual Info: PRELIMINARY Am41DL32x4G Stacked Multi-Chip Package MCP Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features

Contextual Info: HB56UW272EJN Series, HB56UW264EJN Series HB56UW272EJN 16 MB Unbuffered EDO DRAM DIMM 2-Mword X 72-bit, 2 k Refresh, 1-Bank Module 9 pcs of 2 M X 8 Components HB56UW264EJN 16 MB Unbuffered EDO DRAM DIMM 2-Mword X 64-bit, 2 k Refresh, 1-Bank Module (8 pcs of 2 M X 8 Components)

Contextual Info: •WIXIC MX27C4111 4 M -BIT 5 1 2 K x 8 / 2 5 6 K x 1 6 CMOS EPROM WITH PAGE M ODE FEATURES • • • • • • With Page Mode function, 8-word/16-byte page 512K x 8 or 256K x 16 organization +12.5V programming voltage Fast access time: 90/100/120/150 ns

DIP42-P-600-2

Abstract: MR27V852D
Contextual Info: O K I Semiconductor MR27V852D_ Preliminary 524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM_ DESCRIPTION The MR27V852D is a 8Mbit electrically Programmable Read-Only Memory with page mode. Its

MR27V3252D

Contextual Info: O K I Semiconductor MR27V3252D_ Preliminary 2,097,152-Word x 16-Bit or 4,194,304-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM_ DESCRIPTION The MR27V3252D is a 32M bit electrically Programmable Read-Only Memory with page mode. Its

Contextual Info: PRELIMINARY MT28F400 256K x 16, 512K x 8 FLASH MEMORY |U 1I C = R C 3N FLASH MEMORY 256K x 16, 512K x 8 FEATURES PIN ASSIGNMENT Top View • Sev en erase blocks: - 1 6 K B /8 K -w o rd b oo t b lo ck (p rotected ) - T w o 8 K B /4 K -w o rd p aram eter b lo ck s

AKN62428

Abstract: 048576-WORD
Contextual Info: AKN62418 Series AKN62428 Series 524288-Word A KN62418, x 16-Bit/I 048576-Word A K N 62428 Series is x 8-Bit CMOS Mask Programmable ROM mask- PIN CONFIGURATION programmable ROM organized either as 524288-word x 16-Bit or as an 8-Mbit CM O S A K N 62418P, A K N 62428P

Contextual Info: FLASH MEMORY B l I l i 4 M 512 K x 8 /256 K x 16 BIT M BM29 F400TA/BA-90-X/-12-x • FEATURES • •

MR27V6452D

Contextual Info: O K I Semiconductor MR27V6452D_ Preliminary 4,194,304-Word x 16-Bit or 8,388,608-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM_ DESCRIPTION The M R27V6452D is a 64M bit electrically Program mable Read-Only Memory with page mode. Its

KM78C80

Contextual Info: PRELIMINARY CMOS SRAM KM78C80 8 K X 16 /4 K X 16X2-Way Cache Data Static RAM FEATURES DESCRIPTION • Configurable for 2-Way or Direct Mapped Cache Organizations -2-way: 4,096 words x 16 bits — Direct: 8,192 words x 16 bits • On-Chip Address Latches for A0-A11

Contextual Info: IWIXIC MX27C41 n 1 4 M -B IT [5 12 K x 8 / 2 5 6 K x 16} CMOS EPROM W ITH PAGE MODE FEATURES With Page Mode function, 8-word/16-byte page 512K x 8 or 256K x 16 organization +12.5V programming voltage Fast access time: 90/120/150 ns Page mode access time 60/60/75 ns