8 K X 16 BIT Search Results

CompactCellTM Static RAM

Contextual Info: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS

Contextual Info: 8751H/8753H Single-Chip 8-Bit Microcontroller with 4K /8 K Bytes of EPROM DISTINCTIVE CHARACTERISTICS • • • • • • 4K X 8 EPROM 8751H ; 8 K x 8 EPROM (8753H) 1 2 8 x 8 RAM Four 8 -bit ports, 32 I/O lines; programmable serial port Two 16-bit Tim er/E vent counters

HD6433724

Contextual Info: HD6433724/3723, HD6473724- — Preliminary Low Voltage Operation 8-bit Microcomoputer Features • 8-bit CPU general — 16 x 8-bit general registers — 8-bit x 8-bit Multiply — 16-bit + 8-bit (Divide) • Memory — 32 k/24 kbyte Mask ROM: (HD643372/3723)

42-PIN

Abstract: 44-PIN 48-PIN DIP42-P-600-2 MSM531652F
Contextual Info: O K I Semiconductor MSM531652F_ 1,048,576-Words x 16-bit or 2,097,152-Bytes x 8-bit MaskROM 16Words x 16-Bit or 32Bytes x 8-Bit/Page Mode MASKROM • DESCRIPTION The OKI M SM531652F is a 1,048,576-words x 16-bit or 2,097,152-bytes x 8-bit CMOS Mask ROM with an asynchronous page read mode. Each page is organized 16 words x 16bit or 32bytes x 8-bit. It operates on a single 5.0V power supply and is TTL compatible. The

Contextual Info: FLASH MEMORY B l I l i i 8 M 1 M x 8/512 K x 16 BIT MBM29 F800 T-90-X-12-X/MBM29 F 800 B-90-X-12-x • FEATURES

Contextual Info: HB56H232 Series, HB56H132 Series HB56H232B/SB 8 MB EDO DRAM SIMM 2-Mword X 32-bit, 1 k Refresh, 2-Bank Module 4 pcs of 1 M X 16 Components HB56H132B/SB 4 MB EDO DRAM SIMM 1-Mword X 32-bit, 1 k Refresh, 1-Bank Module (2 pcs of 1 M X 16 Components) HITACHI

Contextual Info: AS4LC256K16E0 A 3.3V 2 5 6 K X 16 CMOS DRAM EDO Features • 5 1 2 refresh cycles, 8 m s refresh interval - RAS-only or CAS-before-RAS refresh or self refresh • Organization: 262,144 w ords x 16 bits • H igh speed - 3 5 / 4 5 / 6 0 ns K K access tim e

U 324 SAMSUNG

Abstract: KM23C8100BG 524288X16
Contextual Info: SA MS UN G E L E C T R O N I C S INC b?E D • 7=11,4142 0G17DL.0 ÔT7 SM6K CMOS MASK ROM KM23C81 OOB G 8 M-BH ( 1M X 8 / 5 1 2 K X 16) C M O S M A S K R O M FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode)

EEPROM 64K x 16

Abstract: DP645
Contextual Info: 005402 Hm t p‘ Dense-Pac 'Microsystems, Inc. EEPROM DPE1124A 64K X 16 DESCRIPTION: The DPE1124-200, -250, -300, -350 is a 65,536 X 16 or 131,072 X 8 bit E le ctrically Erasable Programmable Read-Only Memory EEPRO M ). This memory sub­ system is a 56 pin D IP w hich contains sixteen 8 K X 8

Contextual Info: HB56G232 Series, HB56G132 Series HB56G232B/SB 8 MB FP DRAM SIMM 2-Mword X 32-bit, 1 k Refresh, 2-Bank Module 4 pcs of 1 M X 16 Components HB56G132B/SB 4 MB FP DRAM SIMM 1-Mword X 32-bit, 1 k Refresh, 1-Bank Module (2 pcs of 1 M X 16 Components) HITACHI ADE-203-701C (Z)

siemens C492

Contextual Info: SIEMENS High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C515/80C535 Preliminary SAB 80C515/80C515-16 SAB 80C535/80C535-16 CMOS m icrocontroller with factory mask-programmable ROM CMOS microcontroller for external ROM • 8 K x 8 ROM SAB 80C515 only

Contextual Info: H igh p erfo rm an ce 1M X 8/512K X 16 3V CMOS Flash EEPROM AS29LV800 h il. II 1 M X 8 / 5 1 2 K x 1 6 C M O S F lash EPROM Advance information Features •O rg a n iza tio n : 1M x 8 / 5 1 2 K x 16 • L o w p o w e r c o n s u m p t io n • Sector architecture

c535

Abstract: 80C535 80c515 poe cci 1033 siemens 80C535 microcontroller 80c535-n sab-80535 80C51 sab80c51 B158-H6579-X-X-7600
Contextual Info: SIEM EN S High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C515/80C535 Preliminary SAB 80C515/80C515-16 SAB 80C535/80C535-16 CMOS microcontroller with factory mask-programmable ROM CMOS microcontroller for external ROM • 8 K x 8 ROM SAB 80C515 only

Am29DL400BT

Contextual Info: MiN AR AMDZ1 Am29DL400B 4 Megabit 512 K x 8-Blt/2S6 K x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations Sector protection — Host system can program or erase in one bank,

ANAa

Abstract: DIP40
Contextual Info: O K I Semiconductor MSM27C432ZB 262,144-Word x 16-Bit or 524,288-Word x 8-Bit Low-Voltage One Time PROM D E S C R IP T IO N The MSM27C432ZB is a 4 Mb electrically Programmable Read-Only Memory whose configuration can be electrically switched between 262,144 words x 16 bits and 524,288 words x 8 bits. The MSM27C432ZB

PLCC-68 8051 siemens

Abstract: 80C32 smd marking b4h smd marking code fj FET 80C515 80C535 80c535-n ma A235 sab-80535 SMD MARKING CODE E2H
Contextual Info: I flB3SbOS 0002020 321 SIEMENS High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C515/80C535 Preliminary SAB 80C515/80C515-16 SAB 80CS35/80C535-16 CMOS microcontroller with factory mask-programmable ROM CMOS microcontroller for external ROM • 8 K x 8 ROM SAB 80C515 only

AMD Am29lv400bt

Contextual Info: Am29LV400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications

am29f400bb

Abstract: am29f400bb v am29f400 known good AM29F400B7 am29f400b 20185 AM29F400BT
Contextual Info: Am29F400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations — Minimizes system level requirements

Contextual Info: PRELIMINARY Am29LV200 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications

tsop 48 PIN SOCKET

Abstract: DIP42-P-600-2 MR27V1652D R27V1652
Contextual Info: O K I Semiconductor MR27V1652D_ Preliminary 1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM_ DESCRIPTION T he M R 2 7 V 1 6 5 2 D is a 16M bit e le c tric a lly P ro g ra m m a b le R e a d -O n ly M e m o ry w ith page m ode. Its

Contextual Info: 1 In te3w ted DeviceTechnolc>3y. Inc 256K 16K x 16-BIT & 128K (8K X 16-BIT) CM O S STATIC RAM PLASTIC SIP M ODULES IDT8 M P 656S IDT8 M P 628 S FEATURES: DESCRIPTION: • H ig h -d en sity 2 56 K /12 8K C M O S static R A M m o d u les T h e ID T 8 M P 6 5 6 S /ID T 8 M P 6 2 8 S a re 2 5 6 K /1 2 8 K -b lt h ig h -speed

a*29f10

Abstract: 22D9
Contextual Info: FINAL Am29F100 1 Megabit 128 K x 8-bit/64 K x 16-bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements

AM29F100T

Contextual Info: HNA: AMDB Am29F100 1 Megabit 128 K x 8-bit/64 K x 16-bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 V + 10% for read, erase, and program operations — Simplifies system-level power requirements

MC801

Abstract: SAB-502-2R RC2H C5022 sab-502 TCON application 80C52 SAB-C502 SAF-C502
Contextual Info: SIE M E N S SAB-C502 8-Bit CMOS Microcontroller • Fully compatible to standard 8051 microcontroller • Versions for 12 and 20 MHz operating frequency • 16 K x 8 ROM SAB-C502-2R only • 256 x 8 RAM • 256 x 8 XRAM (additional on-chip RAM) • Eight datapointers for indirect addressing