bd950
Abstract: 80954 b0952 B0950 BD949 BD954 USA060-1
Contextual Info: BD950; 952 BD954; 956 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P transistors in a plastic T 0 -2 2 0 envelope. W ith the ir n-p-n complements BD949; 951; 953 and 955 they are intended fo r use in a wide range o f power amplifiers and fo r switching applications.
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bd950bd954t0-220bd949+8bd950jo-22cturerz821457z8214280954b0952b0950usa060-1
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b0951
Abstract: BD951 b0949 B0950 LL90 BD949 BD950 BD953 BD955 IEC134
Contextual Info: BD949; 951 BD953; 955 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic TO-220 envelope. W ith th e ir p-n-p complements BD950; 952; 954 and 956 they are intended fo r use in a wide range o f power amplifiers and fo r switching applications.
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bd949bd953o-220bd950+8bd951bd9557z82141b0951b0949b0950ll90iec134
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b0948
Abstract: BD944 B0943 BD943 b0944 b0946 BD946 BD948
Contextual Info: dPO ^b BD944 BD946 BD948 A SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended fo r use in audio o u tp u t stages and general purpose amplifiers. N-P-N complements are BD943; 945 and 947. QUICK REFERENCE D A T A
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