7Z81016 Search Results

946f

Contextual Info: BD944F;946F BD948F PHILIPS INTERNATIONAL SbE » • 7110fl2b 00430^5 17T ■ P H I N r - 7 ? - ' / cr SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors each in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BD943F, BD945Fand BD947F.

BDT64AF

Abstract: BDT64BF BDT64CF BDT64F BDT65AF BDT65BF BDT65CF BDT65F r64A 004887
Contextual Info: BDT64F; BDT64AF BDT64BF: BDT64CF PHILIPS INTERNATIONAL SbE T> • VllDflEti 00432Ö2 CHI ■ P H I N SILICON DARLINGTON POWER TRANSISTORS PNP Silicon Darlington power transistors in a SO T 1 8 6 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.

b0725

Abstract: B0719 BD721 TRANSISTOR L 287 A b0721 BD723 BD439 BD719 BD720 BD725
Contextual Info: BD719 BD721 BD723 BD725 PHILIPS INTERNATIONAL SbE 3 • 711002b 0 0 4 2 citîb ObS ■ PHIN 7 -33-tl SILICON EPITAXIAL-BASE POWER TRANSISTOR NPN transistor in a SOT32 plastic envelope intended fo r use in audio o u tp u t and general purpose am plifier applications. BD719 is equivalent to BD439. PNP complements are BD720; 722; 724 and

BUW32

Abstract: BUW132 BUW132H BUW132A IEC134 L100 132h
Contextual Info: bbS3T3i DEVELOPMENT DATA c ia n c ia i i • BUW132 SERIES' This data sheet contains advance in fo rm a tio n and specifications are subject to change w ith o u t notice. N AMER PHILIPS/DISCRETE ESE D ^ T -S 3 -/5 NPN SILICON POWER TRANSISTORS High-voltage, glass-passivated power transistors in SOT93 envelope, intended for use in very fast

BD204

Abstract: BD202F til 31a BD201F BD203F BD204F BDX77F BDX78F Philips 119
Contextual Info: _ PHILIPS INTERNATIONAL SbE D • BD202F; BD204F BDX78F J 7110Û2L 0042fl5b flbO M P H I N T-33-l7 SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors inSOT186 envelopes with an electrically insulated mounting base.

Contextual Info: N AMER PHILIPS/DISCRETE 35E D • bbS3T31 D01flbT3 4 I BUP23B BUP23C T - 3 3 - f S' -SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.

con10a

Abstract: BUW133A BUW133 BUW133H 10 N j 400 V tsv 518
Contextual Info: 001^037 DEVELOPMENT DATA fl • BUW133 SERIES This data sheet contains advance information and specifications are subject to change w ithout notice. N AMER P H I L I P S / D I S C R E T E 25E . T -3 3 -J 3 NPN SILICON POWER TRANSISTORS High-voltage, glass-passivated power transistors In SOT93 envelope, intended for use In very fast

BU506DF

Abstract: BU506F
Contextual Info: I I N AMER PHILIPS/DISCRETE b'iE » • bbSa'ìai 3 Jl 0DEÖES7 T U J ■ APX BU506F BU506DF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed switching npn transistor in a SOT186 envelope, intended fo r use in horizontal deflection circuits o f colour television receivers and in line-operated switch-mode applications.

7281660

Abstract: BU506DF
Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistor BU506DF High-voltage, high-speed switching npn transistor in a SOT186 envelope, intended fo r use in horizontal deflection circuits o f colour television receivers and in line-operated switch-mode applications.

BDT64C

Abstract: BDT65 BDT65A BDT64A BDT64 7Z66 BDT64B BDT65B BDT65C
Contextual Info: n o n - BDT64; 64A BDT64B; 64C SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in m o n o lith ic Darlington c irc u it fo r audio o u tp u t stages and general purpose a m p lifie r and switching applications. TO-22C plastic envelope. N-P-N complements are BDT65,

BUV83

Abstract: BUV82
Contextual Info: N AMER PHILIPS/DISCRETE SSE D • aoiöw m BUV82 BUV83 r - 3 3 -1 3 SILICON DIFFUSED POWER TRANSISTORS High voltage, high speed switching npn power transistor in plastic S O T 9 3 envelope, intended for use in converters, inverters, switching regulators, motor control systems and switching applications.

31AF

Abstract: 31df TIP32AF T1P31 31DF 4 2B T1P31C TIP31 PNP Transistor TIP31BF TIP31F TIP32BF
Contextual Info: TIP31F; 31AF TIP31BF; 31 CF T1P31DF SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a S O T 186 envelope w ith an electrically insulated mounting base. They are intended fo r use in audio am plifier output stages, general purpose amplifiers, and high-speed

bot64

Abstract: BDT64A BDT64AF BDT64BF BDT64C BDT64CF BDT64F
Contextual Info: BDT64F BDT6 11BDT64BF BDT6 Silicon Darlington power transistors Fig. 5 Safe Operating Area; = 25 °C . I Region of permissible DC operation. (II) Permissible extension for repetitive pulse operation. (1) Ptot max anc* Ppeak max lines. (2) Second-breakdown limits.

BU508DF

Abstract: BU508DF1 BU508AF transistor bu508af UBC023 bu50ba bu508af philips philips bu508af
Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistors BU508AF; BU508DF High-voltage, high-speed switching npn transistors in a fu lly isolated SOT199 envelope w ith integrated efficiency diode fo r the BU508DF , prim arily intended for use in horizontal deflection