7Y MARKING Search Results

TY-307P

Contextual Info: 7Y-307P.DC2 PRODUCTION TESTS "TY-307P" TO READ TOWARD PINS 1 & 2 DOT NEXT TO #1 PIN ON BOBBIN FLANGE TURNS RATIO: 100% 1-2= 43 NOM DC RESISTANCE 3-4=61 NOM IN OHMS APPLY: 1V300 HZ 1-2 MIN INDUCTANCE: 2 HY .250 +/- .025 .781 REF HIPOT: MOUNTING PATTERN 1500V P-S.C

Contextual Info: 44474 d OF P.C. BOARD HOLES REF. T r I.40± .05 i •D IA . 7Y P (4.20± .I0) - „217 + r-o 44474 J (5.50 (5.50 „ I85±„003 (3„00±„05) DIA (4.70±.( „055 ±„002 ( l„40±.05) CK7. NO. I — * RECOMMENDED HOLE LA Y O U T FOR .0 7 0 / (1 .7 8 ) MAX. TH IC K

MIS us army

Abstract: ltsx 1N831A 1N831
Contextual Info: « « -T T n 1 A F * A A f n P C% / T ’ T \ I V l l l v - ö - I V ^ U U / ¿D Z ü iL . 25 MARCH 1966 MILITARY SPECIFICATION c rr iM r r n \ m T ì p t a dI I nJ - T rA \J 7Y il Vr ii U? i T l l L i V l ^ J L / U \ j 1 V O ^ T ìT A T ìT ? J L /X V J L /U j

105k 250v ceramic

Abstract: film 105k 250v 105k 250v VJ9427Y VJ1812U 7Y33 VJ1812Y k m marking marking code 7y vj1812a472
Contextual Info: STYLE VJ1812 Ceramic Chip Capacitors VISHÄI V NPO/COG and X7R I^eel 4 T -*-j [-*- Capacitance W 100 pcs NPO/COG 50V 4700pF 5600pF 6800pF 8200pF .01 jiF V J 1812A 4 72 JX A M X V J1812A 562JXAM X VJ1812A 6 82 JX A M X V J1812A 822JXAM X V J1812A 103JXAM X

7Y 6

Contextual Info: MA111 Variable Capacitance Diodes MA2ZV02 Silicon epitaxial planer type Unit : mm For VCO INDICATES CATHODE ● Small series resistance rD ● S-Mini package, enabling down-sizing of the equipment and auto- 1 0.4±0.15 matic insertion through taping 2 +0.1

sot-23 marking 7z

Abstract: MARKING A8C SOT-23 7y sot23 MMBR941BLT1 SOT-23 A8A marking 7m marking 7Y SOt23 RF Transistors markING 7Z MMBR920LT1
Contextual Info: SOT-23 TRANSISTORS continued Plastic-Encapsulated Bias Resistor Transistors for General-Purpose Applications Pinout: 1-Base, 2-Emltter, 3-Collector hpE@ lc V (BR)CEO Marking Device NPN PNP NPN PNP Volts (Min) MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1

Contextual Info: M ODELS T 7 Y A and T 7 Y B C e rm e t T rim m e rs M in ia tu re , In d u s tria l G ra d e FEA TU R ES A P P L IC A T IO N S • • • • • The T7 trimmer is only .275" [7.0mm] in diameter and fits almost anywhere. A dust sealed plastic case protecting

MARKING 7Y

Abstract: smd marking rd smd rf transistor marking MA2ZV02 smd marking CD
Contextual Info: Diodes SMD Type Silicon Epitaxial Planar Diode MA2ZV02 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features Good linearity and large capacitance-ratio in CD-VR relation +0.1 2.6-0.1 1.0max Small series resistance rD 0.375 0.475

1-435802-5

Abstract: AMP 435802-5 3B marking code
Contextual Info: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED FO R A LL C O P Y R IG H T By P U B L IC A T IO N R IG H TS 2 - , - R E V IS IO N S RESERVED. AD - 00 D E S C R IP T IO N AL 2 RE VISED RER ECO-11-004820 RK HMR I MAR 11 .1 4 + .0 2 TYP CLOSE NO POSITION MARKING.

Contextual Info: XFWBC Shielded T ra n s fo rm e r Series * MINIATURE SURFACE MOUNT PACKAGE * VARIOUS IMPEDANCE RATIOS AVAILABLE * EXCELLENT INSERTION LOSS * IDEAL FOR BALANCED-TO-UNBALANCED APPLICATIONS * OPERATING TEMPERATURE: 0°C TO + 7 0 8C P art Turns Ratio ±4% N um ber

MA2ZV02

Contextual Info: Variable Capacitance Diodes MA2ZV02 Silicon epitaxial planar type Unit : mm INDICATES CATHODE Symbol Rating Unit Reverse voltage DC VR 6 V Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C + 0.1 1.7 ± 0.1 2.5 ± 0.2 + 0.1 0.16 − 0.06

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. IT D COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 6 5 4 2 3 - LOC ALL RIGHTS RESERVED. REVISIONS DIST AD 00 P LTR 0 1 HOUSING MATERIAL: GLASS-FILLED, DESCRIPTION DATE DWN BC AS 03MAY2007 REV PER ECO—0 7 —001967

Contextual Info: ࢅຫ৖ൈहࡍྯ૵਌ Low Frequency Power AmplifierTransistor FHR8050 Low Frequency Power AmplifierTransistor ࢅຫ৖ൈहࡍྯ૵਌ DESCRIPTION & FEATURES 概述及特點 Low Frequency Power Amplifier 低頻功率放大 Suitable for Driverv Stage of Small Motor 小馬達驅動

Contextual Info: Variable Capacitance Diodes MA2ZV02 Silicon epitaxial planar type Unit: mm For VCO 0.30+0.10 –0.05 2 1 Reverse voltage DC VR 6 V Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.9±0.1 Unit 0.00±0.05 Rating 0.90±0.15 7˚ • Absolute Maximum Ratings Ta = 25°C

7y sot23

Abstract: FHT8050Y FHT8550 marking 7Y SOt23
Contextual Info: ࢅຫ৖ൈहࡍྯ૵਌ Low Frequency Power Amplifier Transistors FHT8050 Low Frequency Power Amplifier Transistors ࢅຫ৖ൈहࡍྯ૵਌ DESCRIPTION & FEATURES 概述及特點 Suitable for Driver Stage of Small Motor 小馬達驅動 Complementary to FHT8550 與 FHT8550 互補

7y sot23

Abstract: FHT8050G FHT8050Y FHT8050 FHT8050O FHTA8550 7y marking marking 7Y SOt23
Contextual Info: 广东肇庆风华新谷微电子有限公司 广东省肇庆市风华路 18 号风华电子工业城三号楼一楼 TEL:0758-2865088 2865091 FAX:0758-2849749 Low Frequency Power Amplifier Transistors 低频功率放大三极管 NPN Silicon FHT8050 FEATURES 特点

ME03

Contextual Info: ’ ON QNiMvag -!- I M 9 5 MA X 5» ± 0. 1 9 0 X Lfl O oo 1 ID m V HIIHMtil 1 t 3 B S I - ! -B 1 » i — • ■ ■ - r ■■ i Ä i t I 2 .5 4 -5» (PITCH) ±Q> n 7 8 . 7 4(2.54X31

UDZS2V4B

Abstract: UDZSxxxB Series SOD-323L dj8j marking 8J dj-8j D47N
Contextual Info: UDZSxxxB Series 200 mW SOD-323L Series Surface Mount Zener Voltage Regulator Diodes Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOD-323L FEATURES z z A VZ range selection, 2.4 V ~ 36 V Green EMC B PACKAGING INFORMATION

MM3Z4V7B

Abstract: 8D-11 MM3Z10B MM3Z11B MM3Z12B MM3Z13B MM3Z15B MM3Z16B MM3Z18B MM3Z39B
Contextual Info: Certificate : TH97/10561QM MM3Z2V0B - MM3Z39B Certificate : TW00/17276EM ZENER DIODES VZ : 2.0 to 39 V PD : 300 mW 1.35 1.15 1.80 1.60 0.40 0.25 SOD-323 1.10 0.80 * Total power dissipation : max. 300 mW * Small plastic package suitable for surface mount design

FHR8050

Abstract: FHR8050G FHR8050O FHR8050Y marking 15A sot-89
Contextual Info: 广东肇庆风华新谷微电子有限公司 广东省肇庆市风华路 18 号风华电子工业城三号楼一楼 TEL:0758-2865088 2865091 FAX:0758-2849749 Low Frequency Power Amplifier Transistors 低频功率放大三极管 NPN Silicon FHR8050 FEATURES 特点

Contextual Info: PART M UST INSERT FULLY TO SU R FA C E A IN R ECO M M END ED GRID .025 S Q . 4 .1 1 0 /.1 4 0 [.64] [2 .7 9 /3 .5 6 ] -A - TAB LOCATES TERM. # 1 - 2 SID E _.472 MAX1 [11.99] .945 MAX. [24.00] TJ 6 7 1 -8 0 0 5 MIDCOM .906 MAX. [23.01] (§ ) JZL LOT CODE & DATE CODE

marking 9D

Abstract: D1NL40U AX057 ITT diode marking code 9d diode MARKING CODE 3J
Contextual Info: Super Fast Recovery Diode Axial Diode •fttg H Package D1NL40U OUTLINE AX057 * I 400V 0.9A 2 UJ Feature 2.6 </> • Low Noise • trr=25ns • trr=25ns *2 G> Main Use • Z'l • • • • • O A , 8? • jS fl.F A Unit • mm W eight 0. 19k T y p Switching Regulator

S30SC4MT

Abstract: DIODE UF marking code
Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE S30SC4MT Unit : mm Package I MTO-3PT Weight 52g Typ 40V 30A Feature • T j= i5 ( r c • Tj=150°C • P r r s m P K t? • P rrsm Rating • 9 jCÖtyJvSU' • Small 8 jc • High lo Rating • 7 • • • •

MM3Z7V5B

Abstract: MM3Z3V3B MM3Z10B MM3Z11B MM3Z12B MM3Z13B MM3Z15B MM3Z16B MM3Z39B MM3Z3V9B
Contextual Info: TH97/2478 MM3Z2V2B - MM3Z39B TH09/2479 IATF 0060636 SGS TH07/1033 ZENER DIODES 1.35 1.15 1.80 1.60 0.40 0.25 SOD-323 VZ : 2.2 to 39 V PD : 300 mW FEATURES : 1.10 0.08 surface mount design * High reliability * Pb / RoHS Free 0.15 max * Total power dissipation : max. 300 mW