03MAY2007 Search Results

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. IT D COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 6 5 4 2 3 - LOC ALL RIGHTS RESERVED. REVISIONS DIST AD 00 P LTR 0 1 HOUSING MATERIAL: GLASS-FILLED, DESCRIPTION DATE DWN BC AS 03MAY2007 REV PER ECO—0 7 —001967

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. IT U COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 6 5 4 3 2 - ALL RIGHTS RESERVED. LOC DIST AD 00 R E V IS IO N S P LTR 01 DESCRIPTION R EV PER DATE DWN 03MAY2007 E C O —0 7 —0 0 1 9 6 7 APVD BC AS

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 6 5 4 3 2 - LOC REVISIONS DIST AD 00 ALL RIGHTS RESERVED. P LTR 0 1 DESCRIPTION DATE DWN BC AS 03MAY2007 REV PER ECO—0 7 —001967 APVD HOUSING MATERIAL: GLASS-FILLED POLYMER.

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. IT U COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 6 5 4 2 3 - LOC ALL RIGHTS RESERVED. AD REVISIONS DIST 00 P LTR DESCRIPTION DATE HOUSING MATERIAL: GLASS-FILLED APVD BC AS 03MAY2007 REV PER ECO—0 7 —001967

F15NM60N

Abstract: p15nm60n W15NM60N STB15NM60N STF15NM60N STI15NM60N STP15NM60N STW15NM60N F15N
Contextual Info: STB15NM60N - STF/I15NM60N STP15NM60N - STW15NM60N N-channel 600V - 0.270Ω - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID 3 3 12 1 STB15NM60N 650V < 0.299Ω 14A STI15NM60N 650V < 0.299Ω

STPS20

Contextual Info: STPS20120C Power Schottky rectifier Datasheet − production data Features • High junction temperature capability ■ Avalanche rated A1 ■ Low leakage current A2 ■ Good trade-off between leakage current and forward voltage drop K Description K Dual center tap Schottky rectifier suited for high

p80nf06

Abstract: JESD97 STB80NF06 STB80NF06T4 STP80NF06 STW80NF06 P80NF
Contextual Info: STP80NF06 - STB80NF06 STW80NF06 N-channel 60V - 0.0065Ω - 80A TO-220/D2PAK/TO-247 STripFET II Power MOSFET Features Type VDSS RDS on ID STB80NF06 60V <0.008Ω 80A STP80NF06 60V <0.008Ω 80A 3 1 STW80NF06 60V • 100% avalanche tested ■ Low threshold drive

k137

Abstract: HM SOT23-5 st k136 JESD97 TS507 TS507ID TS507IDT HM SOT23-5 marking marking code ad 5.9* sot23-5
Contextual Info: TS507 High precision rail-to-rail operational amplifier Features • Ultra low offset voltage: 25 µV typ, 100 µV max ■ Rail-to-rail input/output voltage swing ■ Operating from 2.7 V to 5.5 V ■ High speed: 1.9 MHz ■ 45° phase margin with 100 pF ■

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 2007 RELEASED FOR PUBLICATION 6 5 4 3 2 2007 LOC AD ALL RIGHTS RESERVED. BY - 1 REVISIONS DIST 00 P LTR F 1.9 REF 2.375 11.8 REF 6.00 0.1 DESCRIPTION DATE REVISED PER ECO-13-010626 DWN APVD KH 31JUL2013 RP 2.5 REF

st10 Bootstrap

Abstract: ST10F273E
Contextual Info: ST10F273M 16-bit MCU with 512 Kbyte Flash memory and 36 Kbyte RAM Datasheet − production data Features • High performance 16-bit CPU with DSP functions – 50ns instruction cycle time at 40 MHz max CPU clock – Multiply/accumulate unit MAC 16 x 16-bit

10SP capacitor

Abstract: 13sp 10SP 010 15SP 010 LNBP SERIES LNBP12 13SP 010 LNBP20 10SP 010 capacitor 567 tone
Contextual Info: LNBP20 / LNBP1X series LNBP supply and control voltage regulator parallel interface Feature summary • Complete interface for two LNBs remote supply and control ■ LNB selection and stand-by function ■ Built-in tone oscillator factory trimmed at 22KHz

ST10F273M-4Q3

Abstract: diode T35 12H ST10F273 TQFP144 DIMENSION LQFP144 PQFP144 ST10 ST10F273E st10 Bootstrap ST10F273 reprogramming
Contextual Info: ST10F273M 16-bit MCU with 512 Kbyte Flash memory and 36 Kbyte RAM Features • High performance 16-bit CPU with DSP functions – 50ns instruction cycle time at 40 MHz max CPU clock – Multiply/accumulate unit MAC 16 x 16-bit multiplication, 40-bit accumulator

Contextual Info: TS507 High precision rail-to-rail operational amplifier Datasheet - production data Applications Pin connections top view • Battery-powered applications • Portable devices Output 1 VDD 2 Non Inverting Input 3 5 VCC • Signal conditioning • Medical instrumentation

2DF30L

Abstract: 7200 b transistor STS2DNF30L marking 7200 so8
Contextual Info: STS2DNF30L Dual n-channel 30 V, 0.09 Ω, 3 A SO-8 STripFET Power MOSFET Features Type VDSS RDS on max ID STS2DNF30L 30V <0.11Ω 3A • Standard outline for easy automated surface mount assembly ■ Low threshold gate drive S0-8 Application ■ Switching applications

ST10F27

Contextual Info: ST10F273M 16-bit MCU with 512 Kbyte Flash memory and 36 Kbyte RAM Datasheet − production data Features • ■ ■ ■ High performance 16-bit CPU with DSP functions – 50ns instruction cycle time at 40 MHz max CPU clock – Multiply/accumulate unit MAC 16 x 16-bit

Contextual Info: TS507 High precision rail-to-rail operational amplifier Features • Ultra low offset voltage: 25 µV typ, 100 µV max ■ Rail-to-rail input/output voltage swing ■ Operating from 2.7 V to 5.5 V ■ High speed: 1.9 MHz ■ 45° phase margin with 100 pF ■

Contextual Info: STPS20120C Power Schottky rectifier Datasheet − production data Features • High junction temperature capability ■ Avalanche rated A1 ■ Low leakage current A2 ■ Good trade-off between leakage current and forward voltage drop K Description K Dual center tap Schottky rectifier suited for high

STPS20

Abstract: STPS20120C STPS20120CFP STPS20120CR STPS20120CT
Contextual Info: STPS20120C Power Schottky rectifier Main product characteristics IF AV 2 x 10 A VRRM 120 V A1 Tj(max) 175° C A2 VF(typ) 0.54 V K A1 TO-220FPAB STPS20120CFP Feature and benefits • High junction temperature capability ■ Avalanche rated ■ Low leakage current

Contextual Info: ST10F273M 16-bit MCU with 512 Kbyte Flash memory and 36 Kbyte RAM Datasheet − production data Features • High performance 16-bit CPU with DSP functions – 50ns instruction cycle time at 40 MHz max CPU clock – Multiply/accumulate unit MAC 16 x 16-bit

Contextual Info: STP80NF06 - STB80NF06 STW80NF06 N-channel 60V - 0.0065Ω - 80A TO-220/D2PAK/TO-247 STripFET II Power MOSFET Features Type VDSS RDS on ID STB80NF06 60V <0.008Ω 80A STP80NF06 60V <0.008Ω 80A STW80NF06 60V • 100% avalanche tested ■ Low threshold drive

159/Thermistor 15SP

Abstract: LNBP11SP-TR
Contextual Info: LNBP20 / LNBP1X series LNBP supply and control voltage regulator parallel interface Feature summary • Complete interface for two LNBs remote supply and control ■ LNB selection and stand-by function ■ Built-in tone oscillator factory trimmed at 22KHz

wk 2 94v-0

Abstract: 1734449-1 cd 4540
Contextual Info: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. L0C ALL RIGHTS RESERVED. REVISIONS DIST DW LTR DESCRIPTION A DATE DWN OH WK 04M AY07 ECR—0 7 —01 041 1, CHANGE TERMINAL’S PROFILE APVD D 0.89 49 .6 0 ± 0 .0 5

74VHC04

Abstract: 74VHC14 74VHC14MTR 74VHC14TTR JESD97 TSSOP14
Contextual Info: 74VHC14 HEX SCHMITT inverter Features • High speed: tPD = 5.5ns typ. at VCC = 5V ■ Low power dissipation: ICC = 2 µA (Max.) at TA = 25°C ■ Typical hysteresis: Vh = 1V at VCC = 4.5V ■ Power down protection on inputs ■ Symmetrical output impedance:

74VHC14

Abstract: 74VHC04 74VHCT14A 74VHCT14AMTR 74VHCT14ATTR JESD97 TSSOP14 tssop14 st automotive
Contextual Info: 74VHCT14A HEX SCHMITT inverter Features • High speed: tPD = 5.5ns typ. at VCC = 5V ■ Low power dissipation: ICC = 2 µA (Max.) at TA = 25°C ■ Typical hysteresis: Vh = 0.7V at VCC = 4.5V ■ Power down protection on inputs & outputs ■ Symmetrical output impedance: