7E002 Search Results

496k

Abstract: AT49F008A-90TI AT49F008A AT49F008AT AT49F8192A AT49F8192AT
Contextual Info: Features • Single-voltage Operation • • • • • • • • • – 5V Read – 5V Programming Fast Read Access Time – 90 ns Internal Erase/Program Control Sector Architecture – One 8K Word 16K Bytes Boot Block with Programming Lockout – Two 4K Word (8K Bytes) Parameter Blocks

LH28F800BJHB-PTTL10

Abstract: FC004 ap007 7D002
Contextual Info: Date 8M x8/x16 Flash Memory LH28F800BJHB-PTTL10 Jul. 6. 2001 LHF80J24 ●Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written

LH28F800BJHE-PTTL90

Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F800BJHE-PTTL90 Flash Memory 8M 512 KB x 16 / 1MB × 8 (Model No.: LHF80J03) Spec No.: EL152047 Issue Date: February 14, 2003 sharp LHF80J03 ●Handle this document carefully for it contains material protected by international copyright law.

496k

Abstract: AT49BV008A AT49BV008AT AT49BV8192A AT49BV8192AT
Contextual Info: Features • • • • • • • • • • 2.7V to 3.6V Read/Write Operation Fast Read Access Time - 120 ns Internal Erase/Program Control Sector Architecture – One 8K Words 16K bytes Boot Block with Programming Lockout – Two 4K Words (8K bytes) Parameter Blocks

78XXX

Abstract: AT49B AT12T T49B
Contextual Info: Features * * * * * * * * * * 2.7V to 3.6V Read/Write Operation Fast Read Access Time -120 ns Internal Erase/Program Control Sector Architecture - One 8K Words 16K bytes Boot Block with Programming Lockout - Two 4K Words (8K bytes) Parameter Blocks - One 496K Words (992K bytes) Main Memory Array Block

LV008A

Abstract: 496k AT49BV008A AT49BV008AT AT49BV8192A AT49BV8192AT
Contextual Info: Features • • • • • • • • • • Single-voltage Read/Write Operation: 2.7V to 3.6V BV , 3.0V to 3.6V (LV) Fast Read Access Time – 70 ns Internal Erase/Program Control Sector Architecture – One 8K Word (16K Bytes) Boot Block with Programming Lockout

LHF80J21

Abstract: FE005 LH28F800BJB-PTTL90
Contextual Info: Date 8M x8/x16 Flash Memory LH28F800BJB-PTTL90 Jun. 11. 2001 LHF80J21 ●Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written

FE005

Abstract: LH28F800BJE-PTTL90
Contextual Info: Date 8M x8/x16 Flash Memory LH28F800BJE-PTTL90 Feb. 1. 2001 LHF80J01 ●Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written

LH28F800BJE-PTTLZ1

Contextual Info: Date 8M x8/x16 Flash Memory LH28F800BJE-PTTLZ1 Aug. 27. 2002 LHF80JZB ●Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written

LH28F800BJB-PTTL10

Contextual Info: Date 8M x8/x16 Flash Memory LH28F800BJB-PTTL10 Jul. 11. 2001 LHF80J22 ●Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written

F008A-90CI

Abstract: AT49F008AT-12TC F008 at49 AT49F008A AT49F8192A a12t AT49F8192A-70TI F008A
Contextual Info: Features • Single Voltage Operation - 5V Read - 5V Programming • Fast Read Access Time - 70 ns • Internal Erase/Program Control • Sector Architecture - One 8K Words 16K bytes Boot Block with Programming Lockout - Two 4K Words (8K bytes) Parameter Blocks

48C1

Abstract: AT49BV008A AT49BV8192A 04XXX AT49BV8192AT-12RI
Contextual Info: Features • • • • • • • • • • 2.7V to 3.6V Read/Write Operation Fast Read Access Time - 90 ns Internal Erase/Program Control Sector Architecture - One 8K Words 16K Bytes Boot Block with Programming Lockout - Two 4K Words (8K Bytes) Parameter Blocks

LH28F800BJE-PTTL10

Contextual Info: Date 8M x8/x16 Flash Memory LH28F800BJE-PTTL10 Feb. 1. 2001 LHF80J02 ●Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written

LH28F800BJE-PTTL90

Abstract: 7E003
Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F800BJE-PTTL90 Flash Memory 8M 512K x 16/1M × 8 (Model No.: LHF80J01) Spec No.: EL132002 Issue Date: February 1, 2001 sharp LHF80J01 ●Handle this document carefully for it contains material protected by international copyright law.

Contextual Info: Features • • • • • • • • • • Single-voltage Read/Write Operation: 2.7V to 3.6V BV , 3.0V to 3.6V (LV) Fast Read Access Time – 90 ns Internal Erase/Program Control Sector Architecture – One 8K Word (16K Bytes) Boot Block with Programming Lockout

Contextual Info: Features • Single-voltage Operation • • • • • • • • • – 5V Read – 5V Programming Fast Read Access Time – 90 ns Internal Erase/Program Control Sector Architecture – One 8K Word 16K Bytes Boot Block with Programming Lockout – Two 4K Word (8K Bytes) Parameter Blocks

78xxX

Contextual Info: Features • Single Voltage Operation • • • • • • • • • – 5V Read – 5V Programming Fast Read Access Time - 70 ns Internal Erase/Program Control Sector Architecture – One 8K Words 16K bytes Boot Block with Programming Lockout – Two 4K Words (8K bytes) Parameter Blocks

LH28F800BJHE-PTTL90

Contextual Info: Date 8M x8/x16 Flash Memory LH28F800BJHE-PTTL90 Feb. 2. 2001 LHF80J03 ●Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written

Contextual Info: Features • • • • • • • • • • Single-voltage Read/Write Operation: 2.7V to 3.6V BV , 3.0V to 3.6V (LV) Fast Read Access Time – 90 ns Internal Erase/Program Control Sector Architecture – One 8K Word (16K Bytes) Boot Block with Programming Lockout

AT49F8192AT-90TI

Abstract: 496k AT49F008AT-12TC AT49F008A AT49F008AT AT49F8192A AT49F8192AT
Contextual Info: Features • Single Voltage Operation • • • • • • • • • – 5V Read – 5V Programming Fast Read Access Time - 70 ns Internal Erase/Program Control Sector Architecture – One 8K Words 16K bytes Boot Block with Programming Lockout – Two 4K Words (8K bytes) Parameter Blocks

Contextual Info: Features • Single Voltage Operation - 5V Read - 5V Reprogramming • Fast Read Access Tim e - 90 ns • Internal Erase/Program Control • Sector Architecture - One 8K Words 16K Bytes Boot Block with Programming Lockout - Two 8K Words (16K Bytes) Parameter Blocks

Contextual Info: Features • Low Voltage Operation - 2.7V Read - 5V Program/Erase • Fast Read Access Time -120 ns • Internal Erase/Program Control • Sector Architecture - One 8K Words 16K bytes Boot Block with Programming Lockout - Two 8K Words (16K bytes) Parameter Blocks

Contextual Info: PRELIMINARY PRODUCT SPECIFICATIONS Integrated Circuits Group LRS1348B Stacked Chip 16M Flash and 4M SRAM Model No.: LRS1348B Spec No.: EL127003 Issue Date: July 3, 2000 sharp L R S 13 48 B • Handle this document carefully for it contains material protected by international copyright law.

49BV040

Abstract: CDIP32 ATMEL CDIP 6G9645 7G9740 6g964
Contextual Info: PAGE 1 OF 11 ATMEL CORPORATION Tel: 408 441-0311 Fax:(408)436-4200 AT-49BV040 FLASH MEMORY RELIABILITY DATA - 150°C DYNAMIC OPERATING LIFETEST - 200°C RETENTION BAKE - 125°C OPERATING LIFETEST (PLASTIC) - 150°C RETENTION BAKE (PLASTIC) - 15 PSIG PRESSURE POT