48C1 Search Results

Contextual Info: 48C12S Linear ICs dc-to-dc/Charge Pump Voltage Converter status Military/High-RelN Output Voltage Nominal V 12 Load Current Max. (A)290m Drop-Out Volt Max. P(D) Max. (W)144m Nom. Supp (V)48 Minimum Operating Temp (øC)-25 Maximum Operating Temp (øC)70

UL1007 AWG28

Abstract: PF35T geared motor ratio 120 PF35T-48C1G AWG28 gear motor of gear motor Nippon PF35T-48 gear
Contextual Info: Dimensions of Geared Model Dimensions of Geared Model PF35 Tin-Can Stepper with Gearhead H Type PF35 w/H Gear Head 15 43.5 36.6 (max) PF35T w/M Gear Head (4) PF35T-48C1G(1/5) Tin-Can Stepper with Gearhead (M Type) Ø37 5.5 -0.1 Ø12 310 ±15 310 ±15 10

Contextual Info: 48C15S Linear ICs dc-to-dc/Charge Pump Voltage Converter status Military/High-RelN Output Voltage Nominal V 15 Load Current Max. (A)235m Drop-Out Volt Max. P(D) Max. (W)144m Nom. Supp (V)48 Minimum Operating Temp (øC)-25 Maximum Operating Temp (øC)70

Contextual Info: EEPROMS 48C512/ 48C1024 512 K/1024 K FLASH EEPROM July 1987 ADVANCE DATA S H EET Features • 64K/128K Byte Writable Non-Volatile Memory ■ Low Power CMOS Process ■ Electrical Chip and Block Erase • 7.5 Second Maximum Erase Time ■ Electrical Byte Write

AT49BV802A

Abstract: AT49BV802AT AT49BV802AT-70CI at49bv802a-70tu
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Fifteen 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

S 3590A

Abstract: AT49BV163D AT49BV163DT AT49BV163DT-70TU
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Fast Read Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout

Contextual Info: Advance Information 48C111-17 ill# ICW 0RKS 100MHz Mobile Motherboard System Clock Features Key Specifications Maximized EMI suppression using IC W O R K S ’ Spread Spectrum Technology Power on default to spread mode Six copies of PCI Output Synchronous w/CPU output

3582B

Abstract: AT49BV322D AT49BV322DT AT49BV
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

AT49BV322A-70TI

Abstract: nc 555 AT49BV320A AT49BV320AT AT49BV322A AT49BV322AT
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

496k

Abstract: AT49BV008A AT49BV008AT AT49BV8192A AT49BV8192AT
Contextual Info: Features • • • • • • • • • • 2.7V to 3.6V Read/Write Operation Fast Read Access Time - 120 ns Internal Erase/Program Control Sector Architecture – One 8K Words 16K bytes Boot Block with Programming Lockout – Two 4K Words (8K bytes) Parameter Blocks

1604E

Abstract: 48C-1 48C1
Contextual Info: Features • Single-voltage Operation • • • • • • • • • – 5V Read – 5V Programming Fast Read Access Time – 70 ns Internal Erase/Program Control Sector Architecture – One 8K Word 16K Bytes Boot Block with Programming Lockout – Two 4K Word (8K Bytes) Parameter Blocks

78XXX

Abstract: AT49B AT12T T49B
Contextual Info: Features * * * * * * * * * * 2.7V to 3.6V Read/Write Operation Fast Read Access Time -120 ns Internal Erase/Program Control Sector Architecture - One 8K Words 16K bytes Boot Block with Programming Lockout - Two 4K Words (8K bytes) Parameter Blocks - One 496K Words (992K bytes) Main Memory Array Block

Contextual Info: 48C128 CMOS DRAM 128K x 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 131,072 x 8 bit Fast Page M ode CM O S DRAMs. Fast Page M ode offers high speed random access of m em ory cells w ithin the sam e row. A ccess tim e 55, 60, or 70 and pow er consum ption

Contextual Info: Features • Single Voltage Read/Write Operation: 1.65V to 1.95V • Access Time – 80 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

AT49BV322DT

Abstract: AT49BV322D
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

Contextual Info: SURFACE M OUNT and PLUG-IN TYPICAL CHARACTERISTICSTest co n d itio n s: 25°C ambient and input voltage at O utput voltage to lera n ce a t fu ll loa d : 5V models ± 0.25V 9V models * 0.3V 12V & 15V models ± 0.4V 24V & 28V models * 0.5V 48V models ± 0.7V

BJ226

Abstract: trompeter TAI-221
Contextual Info: OATA CONTAINED IN THIS DOCUMENT IS PROPRIETARY TD TROMPETER a£CTRONICS INC. AND SHALL NOT BE DISCLOSED, COPIED OR USB ASSEMBLE PER FIR PROCUREMENT CR MANUFACTURE WITHOUT EXPRESS WRITTEN PB8MISSI0N. • 1 .132- ±.030 -i8<-g TAI-D118 TAI-A118 TAI-0118 TAI-A1IB

AT49LV3218

Abstract: nc 555 AT49BV3218 AT49BV3218T AT49LV3218T
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.3V BV , 3.0V to 3.6V (LV) • Access Time – 85 ns • Sector Erase Architecture • • • • • • • • • • • – Sixty-three 32K Word (64K Byte) Sectors with Individual Write Lockout

LV008A

Abstract: 496k AT49BV008A AT49BV008AT AT49BV8192A AT49BV8192AT
Contextual Info: Features • • • • • • • • • • Single-voltage Read/Write Operation: 2.7V to 3.6V BV , 3.0V to 3.6V (LV) Fast Read Access Time – 70 ns Internal Erase/Program Control Sector Architecture – One 8K Word (16K Bytes) Boot Block with Programming Lockout

Q8031

Abstract: ISL9504 U7500 SLG8LP436 ISL9504 macbook "board view" macbook 820-1889 c5966 U6200 PP3V42G3H
Contextual Info: 8 6 7 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 2 3 4 5 1 CK APPD M42C MLB REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE C 474680 PRODUCTION RELEASED

RTL8211E

Abstract: Marvell 88E1116R TC7SZ08AFEAPE TLA-6T213HF C5855 88E1116R 57B8 PP3V42 NTC 15D-7 u9701
Contextual Info: 8 6 7 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE M97A MLB SCHEMATIC C 681298 PRODUCTION RELEASED DATE 03/11/09 ? REFERENCED FROM T18 03/11/2009 D .csa Date Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM

F008A-90CI

Abstract: AT49F008AT-12TC F008 at49 AT49F008A AT49F8192A a12t AT49F8192A-70TI F008A
Contextual Info: Features • Single Voltage Operation - 5V Read - 5V Programming • Fast Read Access Time - 70 ns • Internal Erase/Program Control • Sector Architecture - One 8K Words 16K bytes Boot Block with Programming Lockout - Two 4K Words (8K bytes) Parameter Blocks

3582B

Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

48C1

Abstract: AT49BV008A AT49BV8192A 04XXX AT49BV8192AT-12RI
Contextual Info: Features • • • • • • • • • • 2.7V to 3.6V Read/Write Operation Fast Read Access Time - 90 ns Internal Erase/Program Control Sector Architecture - One 8K Words 16K Bytes Boot Block with Programming Lockout - Two 4K Words (8K Bytes) Parameter Blocks