7D TRANSISTOR Search Results

M74LS374P

Abstract: 8Q transistor 20-PIN DIL-24 40MHztPLH
Contextual Info: MITSUBISHI LS TTLs M 74LS374P OCTAL POSITIVE EDGE-TRIGGERED D-TYPE FLIP FLOPS W ITH 3-STATE OUTPUTS DESCRIPTION PIN CONFIGURATION TOP VIEW is a semiconductor integrated circuit OUTPUT input and a clock input, which are common to all the 1Q - in 2D 7D Ï Ï ] « - 7D

mica capacitor

Abstract: mica variable capacitor c2312 Silver mica capacitor variable resistor 10w mica capacitors 2SK1739A
Contextual Info: TO SH IBA 2SK1739A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1739A RF POWER MOS FET for UHF TV BROADCAST TRANSMITTER Output Power Po ^ 90 W Min. • Drain Efficiency 7D = 50% (Typ.) • Frequency f = 770 MHz Push - Pull Structure Package

VHF TV BROADCAST TRANSMITTER

Abstract: 200 pF air variable capacitor variable capacitor trimmer Q TRIMMER capacitor 2SK131 2SK1310A L4 toshiba mica trimmer capacitor
Contextual Info: TOSHIBA 2SK1310A 2 S K 1 3 1 OA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER Output Power Po ^ 190 W Min. Drain Efficiency 7D = 65% (Typ.) f = 230 MHz Frequency Push - Pull Structure Package

2SK1310

Abstract: VHF TV BROADCAST TRANSMITTER 2-30-MHz 230MHZ VHF BROADCAST 14pf variable capacitor Silver mica capacitor
Contextual Info: TOSHIBA 2SK1310 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 310 RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER Output Power Po^l90W M in. Drain Efficiency 7D = 65%(Typ.) Frequency f = 230MHz Push-P ull Structure Package MAXIMUM RATINGS (Tc = 25°C)

Contextual Info: T O SH IB A 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER • • • Output Power Power Gain Drain Efficiency PO=630m W G p^ 14.9dB 7d ^45 % MAXIMUM RATINGS Ta = 25°C SYMBOL RATING

Contextual Info: TO SHIBA 2SK1310 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 310 RF PO W ER MOS FET for VHF TV BROADCAST TRANSMITTER Output Power P o ^l90W Min. Drain Efficiency 7D = 65%(Typ.) Frequency f = 230MHz Unit in mm -H _ e Push - Pull Structure Package

metal oxide varistor

Abstract: varistors METAL OXIDE VARISTOR k Metal-Oxide Varistor 7d transistor triac varistor Varistor varistors 7d series code diode transient Metal Varistor
Contextual Info: Metal Oxide Varistors 7D Series Metal Oxide Varistors FEATURES Wide operating voltage (V1mA): from 18V to 820V Fast response to transient over-voltage and limited current Capable of absorbing high transient energies Low clamping ratio and no follow-on current

D54FY7D

Abstract: D55FY7D C-491
Contextual Info: D54FY 7D NPN POWER DARLINGTON TRANSISTORS 80 VOLT S 7 AMP, 30 W ATTS Designed for high power switching applications, hammer drive, pulse motor drive applications. Features: • High DC Current Gain: hFE = 2000 Min. (at VCE = 3V, lc = 3A) C A S E S T Y LE TO-220IS

J174

Abstract: J177 J176 J175
Contextual Info: m bbS3*ì31 N AMER DOBMOtn 7DÖ « A P X PHILIPS/DISCRETE b ?E J174 TO 177 D P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical p-channel ju nction FETs in a plastic TO-92 envelope and intended fo r application w ith analog switches, choppers, commutators etc.

Contextual Info: 2SK1739 T O SH IB A TOSHIBA FIELD EFFECT TRANSISTOR K I Í 1 SILICON N CHANNEL MOS TYPE 7 Í Q Unit in mm RF POWER MOS FET for UHF TV BROADCAST TRANSMITTER Output Power Po = 90W Min. 7D = 50%(Typ.) Efficiency f= 770MHz Frequency Push - Pull Structure Package

Contextual Info: TOSHIBA 2SK1028 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 028 RF PO W ER MOS FET for VHF TV BROADCAST TRANSMITTER • O utput Power Po^lOOW Min. • Drain Efficiency 7D = 70%(Typ.) • Frequency f= 230MHz M A XIM U M RATINGS (Tc = 25°C)

Contextual Info: TOSHIBA 2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 Unit in mm RF PO W ER MOSFET FOR VHF- AND UHF-BAND PO W ER AM PLIFIER Output Power Power Gain Drain Efficiency P O = 7 -5 W GP= 11.7dB 7d ^ 5 0 % M A X IM U M RATINGS Ta = 25°C

Contextual Info: RN2970,RN2971 T O SH IB A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS R N 7Q 7D • V ■ m MT M R N 7 Q 7 1 g ■ « ■ V IHF M U U nit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. 2.1 ± 0.1 1.25.+ 0.1

Contextual Info: TO SHIBA 2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 Unit in mm RF PO W ER MOSFET FOR VHF- AND UHF-BAND PO W ER AM PLIFIER • • • Output Power Power Gain Drain Efficiency P0 =7.5W GP ^11.7dB 7D^50% M A X IM U M RATINGS Ta = 25°C

Power MOSFET, toshiba

Abstract: 2SK3075 Field Effect Transistor Silicon N Channel MOS vdss 600 MOSFET MARKING PQ Power MOSFET, P, toshiba 2SK3075 MOSFET TRANSISTOR mosfet vhf power amplifier 2 S K 3 0
Contextual Info: TOSHIBA 2SK3075 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL MOS TYPE 2SK3075 RF POWER MOSFET Unit in mm FOR VHF- A N D U H F-B A N D POWER AMPLIFIER • • • Output Power Power Gain Drain Efficiency P0 =7.5W Gp= 11.7dB 7d ^ 5 0 % M A X IM U M RATINGS Ta = 25°C

Contextual Info: REFLECTIVE OBJECT SENSORS OPTOELECTRONICS OPB703W/OPB704W/OPB705W Th e O PB 703W , O P B 704W , and O P B 7D 5W consist of an infrared emitting diode and an NPN silicon a phototransistor m ounted side by side on a converging optical axis in a black plastic housing. The

Contextual Info: RIFA INC 7D 7752272 RIFA INC DE | 7 7 5 E E ? 2 DODO53D D | 70C 002 30 b ’~7^’"5T/~ £ 5 ^ PGC7000 B2.11 Integrated Circuits ’ k r t- GaAs Low Noise FET Description: The PGC 7000 is a general purpose GaAs gal­ lium arsenide MESFET (MEtal Semiconductor

igbt driver SKHI 23/12

Abstract: SKHI 20 semikron SKHI 22 semidriver semikron SKHI 24 high power FERRITE TRANSFORMER igbt h bridge application FERRITE TRANSFORMER semikron skhi 20 din 41651
Contextual Info: $EVROXWH 0D[LPXP 5DWLQJV 7D  ƒ& 6\PERO 96 9L+ ,RXW3 $. ,RXW$9 9&( GYGW 9LVRO ,2 5JRQPLQ 5JRIIPLQ 4RXWSXOVH 7RS 7VWJ 7HUP 6XSSO\ YROWDJH SULPDU\ ,QSXW VLJQDO YROWDJH +,*+ IRU  9 DQG  9 LQSXW OHYHO 2XWSXW SHDN FXUUHQW 2XWSXW DYHUDJH FXUUHQW &ROOHFWRUHPLWWHU YROWDJH VHQVH

transistor J 3305-1

Abstract: 87115 LM2578AH S1A-T1
Contextual Info: SÔE D b S ü l l E 1! D07b727 7D? « N S C E National NATL SEMICOND LINEAR ~ 7 ^ 5 Î - / / - 3 / Semiconductor LM1578A/LM2578A/LM3578A Switching Regulator General Description Features The LM1578A is a switching regulator which can easily be set up for such DC-to-DC voltage conversion circuits as the

semikron SKHI 71

Abstract: semikron SKHI 26 igbt transformer driver semikron SKHI 22
Contextual Info: 6 0,'5,9(5Š $EVROXWH 0D[LPXP 5DWLQJV 7D  ƒ& 6\PERO 7HUP 9DOXHV 96 6XSSO\ YROWDJH SULPDU\  9 9L+ ,QSXW VLJQDO YROWDJH +,*+ 96 ±   9 ,L+ ,QSXW VLJQDO FXUUHQW +,*+   P$  µ& 4*DWH PD[ 0D[ RXWSXW FKDUJH SHU SXOVH ,RXW3($. 2XWSXW SHDN FXUUHQW ,RXW$9

123d transistor

Abstract: mosfet 700V 400A 100Khz transistor 123D 123d H BRIDGE inverters circuit diagram using igbt semikron SKm 123D FERRITE TRANSFORMER 2A mosfet igbt driver stage igbt 400A semikron SKHI 22
Contextual Info: 6 0,'5,9(5Š $EVROXWH 0D[LPXP 5DWLQJV 7D  ƒ& 6\PERO 96 9L+ ,RXW3($. ,RXW$9PD[ 9&( GYGW 9LVRO ,2 5JRQ PLQ 5JRII PLQ 4RXWSXOVH 7RS 7VWJ 7HUP 6XSSO\ YROWDJH SULPDU\ ,QSXWVLJQDO YROWDJH +,*+ IRU  9 DQG  9 LQSXW OHYHO 2XWSXW SHDN FXUUHQW 2XWSXW DYHUDJH FXUUHQW PD[

acrian RF POWER TRANSISTOR

Abstract: BLUECORE 4 EXT 2023-6T 2023-12 acrian inc
Contextual Info: . ¿ a 0182998 ACR IAN .INC »»s y• 9 7D Q -• T7 DE IGiaa^a oDDmat s esalili il li li ¡ail li ¡afilli; PR ELIM INA R Y G EN ER A L 2023-12 IN FO R M A TIO N D ESC R IP TIO N » The 2023-12 is an internally matched common base transistor providing 12 watts of RF CW output power

2N5090

Abstract: ta7146 equivalent transistor n 4212 RCA-2N5090 RCA TO60 TRANSISTORS 3431J 9ZSS-3620R2 RCA 813
Contextual Info: File No. 270 □ U C B Z 7D ^ Pow er T r a n s is to rs Solid State Division 2N5090 High-Power S ilico n N-P-N O verlay Transistor High-Gain T y p e f o r Class A , B, or C Op era tion in V H F / U H F C irc u its Features: • M axim um safe-area-of-operation curve

2sc995

Abstract: Toshiba 2SC995 2SC996 rb1a MA522 Produced by Perfect Crystal Device Technology
Contextual Info: 2 s c 995 I 2/ U L 2 s c 996 D > N P N E M Ì s il ic o n n p n t r ip l e * 7 - - r ^ ^ÿkmtatim o Color TV V ideo Output A p p l ications I B E T t , • ^ l' ? fi ; K 5 > ì; ^ 5 7 P C T 7d ì W U n i t i n mm o • 5Ì Ì^ DIFFUSED TRANSISTOR (PCT PROCESS