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Infineon Technologies AG CY7C1046D-10VXI - Rail/Tube (Alt: CY7C1046D-10VXI)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	CY7C1046D-10VXI	Tube			115	1 - 10 - 100 - 1000 $6.10 10000 $5.91	Get Quote
Flip Electronics	CY7C1046D-10VXI		18,490			1 $4.73 10 $4.73 100 $4.73 1000 $4.73 10000 $4.73	Get Quote
Infineon Technologies AG CY7C1046DV33-10VXI SRAM 4MB 10NS 3.3V 1MX4 FAST ASYNC SRAM - Rail/Tube (Alt: CY7C1046DV33-10VXI)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	CY7C1046DV33-10VXI	Tube			83	1 - 10 - 100 $9.05 1000 $8.91 10000 $8.26	Get Quote
Flip Electronics	CY7C1046DV33-10VXI		14,908			1 $6.05 10 $6.05 100 $6.05 1000 $6.05 10000 $6.05	Get Quote
Cypress Semiconductor CY7C1046CV33-12VCT SRAM Chip Async Single 3.3V 4M-bit 1M x 4-bit 12ns 32-Pin SOJ T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	CY7C1046CV33-12VCT		932			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics	CY7C1046CV33-12VCT		9,198		1	1 - 10 - 100 $1.91 1000 $1.71 10000 $1.61	Buy Now
Cypress Semiconductor CY7C1046CV33-12VC SRAM Chip Async Single 3.3V 4M-bit 1M x 4-bit 12ns 32-Pin SOJ
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	CY7C1046CV33-12VC		792			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics	CY7C1046CV33-12VC		439		1	1 - 10 - 100 $1.91 1000 $1.71 10000 $1.61	Buy Now
Cypress Semiconductor CY7C1046B-15VC 1M x 4 32pin Fast Asynchronous SRAM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	CY7C1046B-15VC		5		1	1 - 10 - 100 $5.30 1000 $4.74 10000 $4.46	Buy Now

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7C1046 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
CY7C1046BV33 Abstract: CY7C1046BV33-10VC CY7C1046BV33-12VC CY7C1046BV33-15VC Contextual Info: 046BV33 PRELIMINARY 7C1046BV33 1M x 4 Static RAM Features • High speed — tAA = 10 ns • Low active power for 10 ns speed — 540 mW max. • Low CMOS standby power (L version) — 1.8 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Automatic power-down when deselected	Original	046bv33 cy7c1046bv33 cy7c1046bv33-10vc cy7c1046bv33-12vc +1cy7c1046bv33-15vc	PDF
Contextual Info: 7C1046D 4-Mbit 1 M x 4 Static RAM 4-Mbit (1 M × 4) Static RAM Features Functional Description The 7C1046D[1] is a high-performance CMOS static RAM organized as 1M words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW	Original	cy7c1046d	PDF
CY7C1046BV33 Abstract: CY7C1046BV33-10VC CY7C1046BV33-12VC CY7C1046BV33-15VC Contextual Info: 33 PRELIMINARY 7C1046BV33 1M x 4 Static RAM Features • High speed — tAA = 10 ns • Low active power for 10 ns speed — 540 mW max. • Low CMOS standby power (L version) — 1.8 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Automatic power-down when deselected	Original	cy7c1046bv33 cy7c1046bv33-10vc cy7c1046bv33-12vc cy7c1046bv33-15vc	PDF
CY7C1046V33 Abstract: CY7C1046V33-12VC CY7C1046V33-15VC Contextual Info: 3 ADVANCE INFORMATION 7C1046V33 1M x 4 Static RAM Features • High speed — tAA = 10 ns • Low active power for 10 ns speed — 540 mW max. • Low CMOS standby power (L version) — 1.8 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention)	Original	cy7c1046v33 cy7c1046v33-12vc cy7c1046v33-15vc	PDF
CY7C1046 Abstract: 7c1046 Contextual Info: ADVANCED INFORMATION 7C1046 1M x 4 Static RAM Features • High speed — tAA = 10 ns • Low active power — 1018 mW max. • Low CMOS standby power(L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Automatic power-down when deselected	Original	cy7c1046 7c1046	PDF
Contextual Info: 7C1046D 4-Mbit 1M x 4 Static RAM Functional Description[1] Features • Pin- and function-compatible with 7C1046B • High speed — tAA = 10 ns • CMOS for optimum speed/power • Low active power — ICC = 90 mA @ 10 ns • Low CMOS Standby Power	Original	cy7c1046d cy7c1046b 400-mil-wide 32-pin	PDF
CY7C1046B Abstract: CY7C1046B-12VC CY7C1046B-15VC CY7C1046B-20VC Contextual Info: 7C1046B 7C1046B 1M x 4 Static RAM Features • High speed — tAA = 12 ns • Low active power — 935 mW max. • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Automatic power-down when deselected	Original	1cy7c1046b cy7c1046b cy7c1046b-12vc cy7c1046b-15vc +1cy7c1046b-20vc	PDF
CY7C1046D-10VXI Abstract: V324 CY7C1046B CY7C1046D Contextual Info: 7C1046D 4-Mbit 1M x 4 Static RAM Functional Description[1] Features • Pin- and function-compatible with 7C1046B • High speed — tAA = 10 ns • CMOS for optimum speed/power • Low active power — ICC = 90 mA @ 10 ns • Low CMOS Standby Power	Original	cy7c1046d cy7c1046b cy7c1046d-10vxi v324	PDF
Contextual Info: V CYPRESS 1M x 4 Static RAM Features sion is provided by an active LOW Chip Enable CE , an active LOW Output Enable (OE), and three-state drivers. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the four I/O pins (I/Oq	OCR Scan	cy7c1046v33	PDF
CY7C1046B Abstract: CY7C1046B-12VC CY7C1046B-15VC CY7C1046B-20VC 046b Contextual Info: 046B 7C1046B 1M x 4 Static RAM Features • High speed — tAA = 12 ns • Low active power — 935 mW max. • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Automatic power-down when deselected	Original	cy7c1046b cy7c1046b-12vc cy7c1046b-15vc cy7c1046b-20vc +1046b	PDF
CY7C1046BV33 Abstract: CY7C1046BV33-10VC CY7C1046BV33-12VC CY7C1046BV33-15VC Contextual Info: 046BV33 PRELIMINARY 7C1046BV33 1M x 4 Static RAM Features • High speed — tAA = 10 ns • Low active power for 10 ns speed — 540 mW max. • Low CMOS standby power (L version) — 1.8 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Automatic power-down when deselected	Original	046bv33 cy7c1046bv33 cy7c1046bv33-10vc cy7c1046bv33-12vc +1cy7c1046bv33-15vc	PDF
Contextual Info: 7C1046D 4-Mbit 1 M x 4 Static RAM 4-Mbit (1 M × 4) Static RAM Features Functional Description • Pin- and function-compatible with 7C1046B The 7C1046D is a high-performance CMOS static RAM organized as 1M words by 4 bits. Easy memory expansion is	Original	cy7c1046d	PDF
CY7C1046B-15VC Abstract: CY7C1046B CY7C1046B-12VC Contextual Info: ADVANCE INFORMATION 7C1046B 1M x 4 Static RAM Features • High speed — tAA = 10 ns • Low active power — 1018 mW max. • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Automatic power-down when deselected	Original	cy7c1046b cy7c1046b-15vc cy7c1046b-12vc	PDF
V324 Abstract: CY7C1046B CY7C1046D CY7C1046D-10VXI Contextual Info: 7C1046D 4-Mbit 1M x 4 Static RAM Functional Description[1] Features • Pin- and function-compatible with 7C1046B • High speed — tAA = 10 ns • CMOS for optimum speed/power • Low active power — ICC = 90 mA @ 10 ns • Low CMOS Standby Power	Original	cy7c1046d cy7c1046b v324 cy7c1046d-10vxi	PDF

Contextual Info: 7C1046D 4-Mbit 1 M x 4 Static RAM 4-Mbit (1 M × 4) Static RAM Functional Description Features The 7C1046D is a high-performance CMOS static RAM organized as 1M words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW	Original	cy7c1046d cy7c1046b	PDF
Contextual Info: 7C1046D 4-Mbit 1 M x 4 Static RAM 4-Mbit (1 M × 4) Static RAM Features provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state drivers. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable	Original	cy7c1046d cy7c1046b	PDF
4946 Abstract: CY7C1041B CY7C1046B CY7C1049B JESD22 MIL-STD-883 PRESSURE COOKER Contextual Info: Cypress Semiconductor Product/Technology Qualification Report QTP# 000301 VERSION 1.0 May, 2000 4 Meg Asynchronous RAM R52D-5R Technology, Fab 4 CY7C1041B 256K x 16 Static RAM 7C1046B 1M x 4 Static RAM CY7C1049B 512K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA:	Original	r52d-5r cy7c1041b cy7c1046b cy7c1049b +5cy7c149b cy7c1049b-vc 4946 jesd22 mil-std-883 pressure cooker	PDF
CY7C1046BN Abstract: CY7C1046BN-15VC Contextual Info: 7C1046BN 1M x 4 Static RAM Features You write to the device by taking Chip Enable CE and Write Enable (WE) inputs LOW. Data on the four IO pins (IO0 through IO3) is then written into the location specified on the address pins (A0 through A19). • Low active power	Original	cy7c1046bn 32-pin cy7c1046bn-15vc	PDF
CY7C1046B Abstract: CY7C1046B-12VC CY7C1046B-15VC CY7C1046B-20VC Contextual Info: 046B 7C1046B 1M x 4 Static RAM Features • High speed — tAA = 12 ns • Low active power — 935 mW max. • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Automatic power-down when deselected	Original	cy7c1046b cy7c1046b-12vc cy7c1046b-15vc cy7c1046b-20vc	PDF

7C1046 Search Results

7C1046 Price and Stock

Infineon Technologies AG CY7C1046D-10VXI

Infineon Technologies AG CY7C1046DV33-10VXI

Cypress Semiconductor CY7C1046CV33-12VCT

Cypress Semiconductor CY7C1046CV33-12VC

Cypress Semiconductor CY7C1046B-15VC

7C1046 Datasheets Context Search

CY7C1046BV33

CY7C1046BV33

CY7C1046V33

CY7C1046

CY7C1046B

CY7C1046D-10VXI

CY7C1046B

CY7C1046BV33

CY7C1046B-15VC

V324

4946

CY7C1046BN

CY7C1046B