7A35 Search Results

B778

Abstract: Sn 0503 0619 817A 0635 CARSEM MIC2186 MIC38C43 MIC38C43YM MIC4127 MIC4680
Contextual Info: SOIC PACKAGE REL MONITOR DATA High Temperature Storage Life +150 deg C, Device Lot No Pkg MSL Soak Peak Temp Plating Date Code SS # Reject Dev. Hrs. 7A35358MEB 7A25053MEF 6A46195MEGG 6A46197MEG 6A50760MNA 6A35612MSC 6A16999MED 6A18264MSD 6A27491M81 6A20594MEA

B778

Abstract: Sn 0503 SY87701VSH 0643G SY100ELT22 mic38c43ym SY100EL16 SY100EL16VZG SY100ELT22LZG MIC2186
Contextual Info: SOIC Lead Free Package Rel Data High Temperature Storage Life +150 deg C, Device Lot No Pkg MSL Soak Peak Temp Plating Date Code SS # Reject Dev. Hrs. 7A35358MEB 7A25053MEF 6A46195MEGG 6A46197MEG 6A50760MNA 6A35612MSC 6A16999MED 6A18264MSD 6A27491M81 6A20594MEA

MHT5002

Abstract: ST 2N3053 D28A9 D11C211B20 DC5501 DC6112B MD20 MM4645 MT75 BFS86
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. t - 40°c * - 45°C H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

2SC114 transistor

Abstract: transistor 2SC114 2SC114 BSS43 D28A9 FZJ 101 FZJ 131 VX3866 MHT5001 usaf516es047m
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

Contextual Info: 3 A I 2 \i r.— { CD i a 8 . 3 MAX. ^ ( O W V J - T 'fy V *fc 1 5 .3 =&-• u r ^ *ij cc I— -f c » - UJ r= & - * ‘— *1 jh -fe s * o o IT) <\l n o •« lil it (0 X in OJ « iK iu_ TTT> Hi <3 a (1 .5 ) TABLE 1 PART 45» PART NAME NO. H E A D E R H O U S IN G

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

MHT5002

Abstract: MHT5001 MHT5006 2sc113 D11C211B20 DC5501 DC6112B MD20 BSY47
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

T35W

Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,

Contextual Info: RELIABILITY REPORT DATE: 9/24/10 QUALITY ENG : PRODUCT : Micrel Rel/QA SY89239V QUAL VEHICLES PACKAGE TYPE : FAB ARRAY PROCESS 8L MLF MICREL EL ASSET 1.2 SY89239V ESD RATINGS LATCH-UP RATING FIT +/- 1000V HBM I/O Trigger @ 200 mA ASSET 1.2 process: 0.8 FIT