79C04 Search Results

Contextual Info: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE2 CE1 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 Memory I/O0-7 Logic Diagram FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation

Contextual Info: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness:

transistor comparison data sheet

Contextual Info: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE2 CE1 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 Memory I/O0-7 Logic Diagram FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation

eeprom programmer schematic diagram

Abstract: eeprom programmer schematic 58C1001 HCN58C1001 maxwell diagram 79LV0408 Maxwell Maxwell board balboa 1
Contextual Info: Application Note Programming the 4 Megabit EEPROM Part Type: Manufacturer: Document No. : Revision : Date : 79C0408 Maxwell Technologies 1005303 2 Sept. 15, 2003 | Maxwell Technologies | 9244 Balboa Avenue, San Diego, CA 92123, United States | | Phone: +1-858-503-3300 | Fax: +1-858-503-3301 | Web: www.maxwell.com |

radiation-hardened EEPROM

Abstract: 79C0408-120 79C0408-150 79C0408-175 79C0408-200 79C0408RP
Contextual Info: SPACE ELECTRONICS INC. 4 MEGABIT EEPROM MCM 512K X 8-BIT S PACE PRODUCTS VCC 1 40 79C0408 VCC CE3 CE2 CE4 VSS VSS R/B A15 A16 RES A14 WE WE A12 A13 OE A7 A8 A6 A5 SEi 79C0408RP A9 A3 A10 A2 VCC A1 I/O7 A0 I/O6 I/O0 I/O5 I/O1 I/O4 I/O2 VSS CE 4 R/B A 0-16 128K x 8

Contextual Info: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM Vcc CE1 CE2 Vss R/B A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 Vss 79C0408 Vcc CE3 CE4 Vss A15 RES WE A13 A8 A9 A11 OE A10 Vcc I/O7 I/O6 I/O5 I/O4 I/O3 Vss CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8

1011541

Contextual Info: I 512kx8bitEEPROM-Radiation Hardened 7 t Q w ^ v n w V i n H w P 128 k x 8 P I V I M CM EEPROM M em ory For Space Applications SeI's 79C040RP RP WE ~ ~ CE- for RAD-PAK multiA».chip module (MCM) memory features a mini­ 128Kx8 128Kx8 128Kx8 128Kx8 mum 100 kilorad (Si) to­

Contextual Info: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE1 CE2 CE3 CE4 RES R/B WE OE 79C0408 A0-16 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 FEATURES DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness:

79C0408RP

Abstract: 79C0408RP-120 79C0408RP-150 79C0408RP-175 79C0408RP-200 SPACE POWER ELECTRONICS 79C0408RP
Contextual Info: SPACE ELECTRONICS INC. 4 MEGABIT EEPROM MCM 512K X 8-BIT SPACE PRODUCTS VCC 1 40 79C0408RP VCC CE1 CE3 CE2 CE4 CE1 VSS R/B A15 A16 RES A14 WE WE A12 A13 OE A7 A8 A5 SEi 79C0408RP A9 OE A3 A10 A2 VCC A1 I/O7 I/O6 I/O5 I/O1 I/O4 I/O2 VSS A0-16 128K x 8 128K x 8

Contextual Info: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness (RP Package):

Contextual Info: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE2 CE1 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 Logic Diagram FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness:

79C0408RP

Abstract: 79C0408RP-150 79C0408RP-175 79C0408RP-200
Contextual Info: SPACE ELECTRONICS INC. 4 MEGABIT EEPROM MCM 512K X 8-BIT SPACE PRODUCTS VCC 1 48 79C0408RP VCC CE1 CE3 CE2 CE4 CE1 VSS VSS RES R/B A15 A16 RES R/B A14 WE WE A12 A13 OE A7 A8 A6 A5 SEi 79C0408RP A9 OE A3 A10 A2 VCC A1 I/O7 I/O6 I/O5 I/O1 I/O4 I/O2 VSS 128K x 8

Contextual Info: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE2 CE1 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 Memory I/O0-7 Logic Diagram FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation

RAD6000

Abstract: NA-GSFC-2005-04 HCN58C1001 EEPROM retention testing EEPROM retention bake screening GSFC SCS750 RAD6000 processor architecture 79LV0408RPFE-20 28C011TRPFS-12
Contextual Info: Review of GSFC NASA Advisory NA-GSFC-2005-04 Part Types: Models: Manufacturer: EEPROM All EEPROM Models Maxwell Technologies Lot Date Codes: All LDC’s Document: 1009322 Revision: Date: 2 March 24, 2006 | Maxwell Technologies | 9244 Balboa Avenue, San Diego, CA 92123, United States |

28C011

Abstract: 28LV010 28C010 Maxwell Technologies 79C0832 79LV0408 79LV0832 HN58C1001 1mb eeprom
Contextual Info: APPLICATION NOTE Hitachi 1Mb EEPROM – Hitachi Die HN58C1001 Purpose Over the last several months several design applications questions have been asked regarding the Hitachi EEPROM. These questions have been to both clarify the datasheet specifications as well as obtain additional information not contained in the

ADC hard radiation

Abstract: 28/ADC hard radiation EEPROM 16MB SCS750 HSN-3000 79LV2040 29F0408 rad-pak 358 9240LP XP-40
Contextual Info: Microelectronics’ Product List Product Description Part Number Radiation Technology Package Screening Style Level FP DIP QFP Specification Status S or B Equivalent Data Sheet Active S, B, I, E S, B, I, E S, B, I, E S, B, I, E S, B, I, E Data Sheet Data Sheet

28C010RP

Abstract: 79C0832 79C0408RP 79C0832RP
Contextual Info: EEPROM Fam m ily www.spaceelectronics.com 3 volt and 5 volt versions available 128-Byte Page programming function to speed up erase and write operations Data polling and a Ready/Busy signal to indicate erase and programming operation status Integrated hardware, noise and

rsn 3404

Abstract: cf -mh 22 e 103 m-c texas instruments data guide manual HIGH VOLTAGE ISOLATION DZ 2101 PEAK DETECTOR CIRC Transistor AND DIODE Equivalent list Scans-049 RRUS 32 b2 specs TIL Display transistor 381 7943 363AM
Contextual Info: a Telecommunication Products Data Book 1992/1993 Advanced Micro Devices Telecommunication Products Data Book 1 9 9 2 /1 9 9 3 D V A N C E D M I C R O D E V I C E S Î 1 1992 Advanced Micro Devices, Inc. Advanced Micro Devices reserves the right to make changes in its products

RRUS 01 B1

Abstract: RRUS 01 B2 M25C22 RRUS 32 b2 RRUS 32 YLE relay relay yle RRUS 02 Chn316 ITI41
Contextual Info: PRELIM INARY Advanced Micro Dual Subscriber Line Audio-Processing Circuit DSLAC Device Devices 79C04(A) DISTINCTIVE CHARACTERISTICS • IOM 2 Interface — C ontrol and PCM on one bus — Data rate up to 4.096-M Hz independent of m aster clock A daptive trans-hybrid balance function