7964 MOSFET Search Results

irfp321

Abstract: IRFP320 IRFP323 IRFP322 mosfet p.321 samsung tv
Contextual Info: "OT^JT-" 7964 142 SAMSUNG SEMI CONDUCTOR. .INC 98D 05189 D e | TlbMlMS DOOSlflT S I N-CHANNEL POWER MOSFETS •' IRFP320/321/322/323 FEATURES • LowRDS{on • • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

IRF 450 MOSFET

Abstract: IRF N-Channel Power MOSFETs IRF230 IRF n CHANNEL MOSFET MOSFET IRF230 IRF231 IRF233 IRF MOSFET 100A 200v IRF232 mosfet n channel irf
Contextual Info: 7964142 S A M SUNG SEM ICONDUCTOR,„IN C _98D 0 5094_ D T * 3 V l • • -HS D e | - “ :, 4LU. ! Q0GS0T4 i "-CHANNEL f IRF230/231Í232/233 POWER MOSFETS FEATURES • LOW RoS on • • • • • • • Improved inductive ruggedness Fast switching times

IRF450

Abstract: mosfet IRF450 th414 IRF452 IRF250 IRF251 IRF252 IRF253 IRF451 Z047
Contextual Info: I I fi _ ' 7 9 6 4 1 4 2 S A M S U N G S E M I C O N D U C T O R INC . DL j v T b m H E 0 0 0 5 1 4 4 S | 98D 05 144_ N-CHANNEL POWER MOSFETS IRF450/451/452/453 FEATURES Low RDS on at high voltage Improved inductive ruggedness Excellent high voltage stability

IRF130

Abstract: irf131 142SA
Contextual Info: 796 4 1 4 2 _ J Tfl SAMSUNG S E M I CONDÜCTOR DE I T T t i M l M S D0DS074 IN C 98D □ 05074 D T ^ -II N-CHANNEL POWER MOSFETS IRF130/131/132/133 FEA TU R E S LOW RDS on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

5109d

Contextual Info: 7 9 6 4 142 SAMSUNG SEMICONDUCTOR Ifl DE I 7 ^ 4 1 4 5 98D 0 51 09 TNO 0 0 0 5 1 0 e] 3 D f-rj?-// N-CHANNEL POWER MOSFETS IRF320/321/322/323 FEATURES • LOW RoS on • • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

Contextual Info: 7964142 SAMSUNG S E M I C O N D U CTOR INC 98D 05204 N-CHANNEL ’ POWER MOSFETS , IRFP350/351/352/353 Tfl ImF FEATURES ^4145 □ G OSE □ 4 Ô Low Ros<on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Low input capacitance

Contextual Info: 7 9 6 4 1 4 2 SAM SUNG hfl S E M ICO N D U CTO R 9 8 D I N C _ DE I TTtiMlMS □□□SDflcl 1 050 8 9 d T -J ? N-CHANNEL POWER MOSFETS IRF220/221/222/223 FEA TU R ES • Low R d S o ii • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

IRF330

Abstract: IRF331 IRF332 IRF333 331z
Contextual Info: 7 9 6 4 1 4 2 S ^M S U N G S E M I C O N D U C T O R I DEI TTbMms DDDSim 9 8 D 0 5114 7 “ D T ^ 3 7 ~ // N-CHANNEL POWER MOSFETS IRF330/331/332/333 FEATURES • Low RDS on • Improved inductive ruggedness • • • • • • Fast switching times Rugged polysilicon gate ceil structure

thyristor TAG 8506

Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
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