1RF9540
Abstract: l 9143 irf 409 IRF 9540 L 9141 IRF95XX IRF high current p-channel IRF9140 IRF9140 TO 220 IRF9540
Contextual Info: 7964142 SAMSUNG S E M I C O N D U C T O R INC Hfl DE 1 7 ^ 4 1 4 5 IRF9140/9141/9142/9143 IRFP9140/9141 /9142/9143 “ IRF9540/9541Z9542/9543_ ^ " D0GS40Ö t- P-CHANNEL POWER MOSFETS Preliminary Specifications - 1 0 0 Volt, 0.2 Ohm SFET PRODUCT SUMMARY
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d0gs40irf9140/irfp9140/9141irf9540/+159541zirf/irfp9140irf9540irf/irfp9141irf9541irf/irfp91421rf9540l 9143irf 409irf 9540l 9141irf95xxirf high current p-channelirf9140irf9140 to 220
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IRF130
Abstract: irf131 142SA
Contextual Info: 796 4 1 4 2 _ J Tfl SAMSUNG S E M I CONDÜCTOR DE I T T t i M l M S D0DS074 IN C 98D □ 05074 D T ^ -II N-CHANNEL POWER MOSFETS IRF130/131/132/133 FEA TU R E S LOW RDS on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure
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d0ds074irf130/131/132/133irf130irf131+5irf132irf13300us435f--13142sa
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g4e diode
Abstract: IRFA1Z0
Contextual Info: DE I T i m m s •SAMSUNG SEMICONDUCTOR INC ^“ IRFA1ZO/1Z3 □0 0S 0b 4 7 I V -o s "- N-CHANNEL PO W ER M O S F E T S FEATURES LOW RoS{on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Low Input capacitance Extended safe operating area
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o-12600us435f--13g4e diode+1irfa1z0
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IRF9120
Abstract: IRFP9120 IRF9120 mosfet IRF9121 IRF 9520 IRF 9120 IRF912213 IRF 9122 IRF9520 IRFP9121
Contextual Info: IRF9120/912110122/9123 « IRFP9120/9121 /9122/9123: IRF9520/9521 /9Ö22/9523 •. P-CHANNEL POWER MOSFETS P r e l i m i n a r y Sn&nifinatinncì Tfi DE 7 clfc>41Lt2 D0054DE 1 | ” uuv/i öUmiviAKY •y*' 3 ^ SAMSUNG SEM ICO ND UC TOR INC -1 0 0 volt, 0.60 Ohm SFET
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irf9120/912110122/9123irfp9120/9121irf9520/9521d0054de+15irf/irfp9120irf9520irf/irfp9121irf9521irf/irfp9122irf9522irf9120irfp9120irf9120 mosfetirf9121irf 9520irf 9120irf912213irf 9122irfp9121
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