779-3200 APPLICATION Search Results

779-2167

Contextual Info: Mass Termination IDC Systems Application Tooling Cross Reference 779-2100 HAND TOOL PART NUMBER DESCRIPTION 311-xxx302 622-xxx0 PLATEN PUSH BLOCK 779-3200 BENCH PRESS 779-3500XT BENCH PRESS PLATEN (NEST) PLATEN (PUSH BLOCK) BASE PLATE (NEST) PLATEN (PUSH BLOCK)

FSU01LG

Contextual Info: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package

fujitsu gaas fet

Abstract: FSU01LG
Contextual Info: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P ^ b = 20.0dBm Typ. • High Associated Gain: G ^ b = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@ f=12G Hz • Low Bias Conditions: V d s =3V, 10mA • Cost Effective Hermetic Microstrip Package

FSU01LG

Contextual Info: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package

452 fet

Abstract: FSU01LG fujitsu GHz gaas fet fujitsu gaas fet
Contextual Info: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=12GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package

Contextual Info: FLL300IP-4 FEATURES • • • • Push-Pull Configuration High PAE: 40% Typ. Broad Frequency Range: 3400 to 3600 MHz. Suitable for class A operation. DESCRIPTION The FLL300IP-4 is a 30 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high

fujitsu GHz gaas fet

Abstract: fujitsu gaas fet FSU01LG
Contextual Info: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package

2SC4672 equivalent

Abstract: 2SC2412KX2 2SC1514K equivalent 2sa1455k SO68 2SB1181F5 equivalent csc 354 2SB1386 equivalent FMC3A FMW5
Contextual Info: h /T ra n sisto rs /\°'y JT — v ^ J ^ fp p — f l ü / L i s t of Products for Each Package • EM3 Extreme M ini-m old 3pir Part No. Application V c e o (V) IC(A) iC Max.(A) PC(W) fj(M H z) Cob(pF) Page h FE lc(mA) V c e (V) 2SC4617 Pre Amp 50 0 15

FLL300IP-4

Contextual Info: FLL300IP-4 FEATURES • • • • Push-Pull Configuration High PAE: 40% Typ. Broad Frequency Range: 3400 to 3600 MHz. Suitable for class A operation. DESCRIPTION The FLL300IP-4 is a 30 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high

FSU01LG

Contextual Info: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package

fll300ip

Contextual Info: FLL300IP-4 FEATURES • • • • Push-Pull Configuration High PAE: 40% Typ. Broad Frequency Range: 3400 to 3600 MHz. Suitable for class A operation. DESCRIPTION The FLL300IP-4 is a 30 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high

FLL300IP-4

Abstract: FLL30
Contextual Info: FLL300IP-4 FEATURES • • • • Push-Pull Configuration High PAE: 40% Typ. Broad Frequency Range: 3400 to 3600 MHz. Suitable for class A operation. DESCRIPTION The FLL300IP-4 is a 30 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high

Contextual Info: FLL300IP-4 FEATURES • • • • Push-Pull Configuration High PAE: 40% Typ. Broad Frequency Range: 3400 to 3600 MHz. Suitable for class A operation. DESCRIPTION The FLL300IP-4 is a 30 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high

FLL300IP-4

Abstract: 15 GHz power amplifier Output Power 37dBm Fujitsu GaAs FET Amplifier fujitsu gaas fet L-band
Contextual Info: FLL300IP-4 FEATURES • • • • Push-Pull Configuration High PAE: 40% Typ. Broad Frequency Range: 3400 to 3600 MHz. Suitable for class A operation. DESCRIPTION The FLL300IP-4 is a 30 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high

Contextual Info: Information DC axial fans Accessories DC centrifugal fans 238 246 248 251 254 AC centrifugal fans AC axial fans ACmaxx / GreenTech EC-Compact fans DC fans - specials Guard grilles Fan filter guard grilles Inlet nozzles Connection cables / Accessories Electrical connections

SCL 1058

Abstract: M383L3313BT1 PC200 DM 1265
Contextual Info: M383L3313BT1 184pin Registered DDR SDRAM MODULE 256MB DDR SDRAM MODULE 32Mx72(16Mx72*2 bank based on 16Mx8 DDR SDRAM) Registered 184pin DIMM 72-bit ECC/Parity Revision 0.8 Nov. 2000 Rev. 0.8 Nov. 2000 184pin Registered DDR SDRAM MODULE M383L3313BT1 Revision History

mc146818ap

Abstract: MC146818ACP MC146818P SC414259CFT16 SC370628DW MC146818CP sc4142 sc4144 XC68341FT16 MC146818AFN
Contextual Info: BR1515/D REV 3 SEMICONDUCTOR DEVICES NOT READY FOR YEAR 2000 March, 1999 Year 2000 Readiness Disclosure IMPORTANT YEAR 2000 NOTICE: You have requested technical information on a product s that is NOT READY for Year 2000 and WILL NOT be fixed. The product(s) you requested has been discontinued. Technical information on the product has been moved to the Year 2000 web site at http://sps.motorola.com.

Climate Control

Contextual Info: www.hammondmfg.com Climate Control Cooling Products General Information .347 Sizing an Air Conditioner .348 Side Mounting DTS Series 1200 BTU/H NEMA 12 .349

Contextual Info: Tantalum Surface Mount Capacitors Low ESR Tantalum surface mount Tantalum Th c surface mount Aluminum Elec Capacitors Sn Aluminum surface mount One world. One KEMET. Tantalum Surface Mount Capacitors Low ESR Table of Contents_ Page

mt 1389 de

Abstract: samwha ferrite EE-4242 EER3530 EER2834 PQ3225 samwha ferrite tile samwha .FERRITE TILE eer3435 str 52100
Contextual Info: www.samwha.com/electronics SAMWHA ELECTRONICS SEOUL HQ SAMWHA USA Inc. SAN DIEGO HQ SAMWHA HUNGARY KFT. HUNGARY Samyoung Bldg 587-8, Sinsa-Dong, Gangnam-Gu, Seoul, 135-892, Korea Tel. +82-2-546-0999 Fax. +82-2-546-7354 2555 Melksee Street, San Diego, California, 92154, USA

EZ 707

Abstract: 2SC3544 EZ 0710 EZ 728
Contextual Info: -NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES_ DESCRIPTION . LOW COST The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automotive keyless entry

sm e040

Abstract: T495X107 2002 476 16V 107 6K 241 tantalum capacitors T2015 T540 COTS Polymer Electrolytic for High Reliability Applications, 2.5 – 63 VDC
Contextual Info: Tantalum Surface Mount Capacitors Low ESR tantalum low esr One world. One KEMET. Tantalum & Aluminum Surface Mount Capacitors Low ESR Table of Contents Page Why Choose KEMET. 3

MS24693

Abstract: MS24693-C3 NAS1635 ssy 1920 ssy 1920 8 pin MS51957-15 MS35649-244 7136-1 MS35338 NAS662C2R4
Contextual Info: IM-289A IM-289A Model 8310 TO A2-33AA36-533-1 Operation & Service Manual Model 8310 Programmable Attenuator Units This documentation may not be reproduced in any form, for any purpose unless authorized in writing by Aeroflex / Weinschel, Inc. Aeroflex / Weinschel, Inc.

6333a

Abstract: E105105 M009 225 6K smd tantalum capacitors ko 157 6K E2K5 T540 COTS Polymer Electrolytic for High Reliability Applications, 2.5 – 63 VDC T543
Contextual Info: Tantalum Surface Mount Capacitors Low ESR tantalum low esr One world. One KEMET. Tantalum & Aluminum Surface Mount Capacitors Low ESR Table of Contents Page Why Choose KEMET. 3