7777R Search Results

BUW12 PHILIPS

Abstract: BUW12 BUW12A 711DU2b lba3
Contextual Info: Philips Sem iconductors Product specification Silicon diffused power transistors BUW12; BUW12A High-voltage, high-speed, glass-passivated npn power transistors in a S O T 9 3 envelope, intended fo r use in converters, inverters, switching regulators, m oto r control systems etc.

HM5241

Abstract: HM5241605CTT15
Contextual Info: HM5241605C Series Preliminary 131,072-w ord x 16-bit x 2-bank Synchronous Dynam ic RAM H IT A C A ll inputs and outputs are referred to the rising edge of the clock input. The HM5241605C is offered in 2 banks for improved performance. Features • 3.3 V Power supply

Nippon capacitors

Contextual Info: HB526A264DB Series 1,048,576-word x 64-bit x 2-bank Synchronous Dynamic RAM Module HITACHI ADE-203-607 Z Preliminary Rev. 0.1 May. 20, 1997 Description The HB526A264DB is a lM x 64 x 2 banks Synchronous Dynamic RAM Small Outline Dual In-line Memory Module (S.O .D IM M ), mounted 8 pieces of 16-Mbit SD RAM (HM5216805TT/HM5216805LTT) sealed in

Contextual Info: o -C=1.0*Contacts+3.00±0.25 CO -B=1.0*Contacts+1.10±0.10- CO 1 Material and Finish Housing : High Temp Plastic UL94V-0 Contact: Copper Alloy Plated : Tin Plated A=1.0*(Contacts-1)±0.10 — 1,00±0.05 A- co s Electrical Specifications o § i♦ IO 05 Section :A-A

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

CY7C43646V

Abstract: CY7C43666V CY7C43686V AEB 015 P
Contextual Info: V CYPRESS CY7C43646V CY7C43666V/CY7C43686V PRELIMINARY 3.3V 1K/4K/16K x36/x18x2 Tri Bus FIFO Features — Ic c = 60 m A , lSB= 12 m A Fully a s yn ch ro n o u s and s im u lta n e o u s read and w rite o p e ratio n p erm itted • For FWFT Mode, Please See Errata Attached

Contextual Info: KMM374S3253AT PC100 SDRAM MODULE KMM374S3253AT SDRAM DIMM 32Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION The Samsung KMM374S3253AT is a 32M bit x 72 Synchro­ • Performance range

Mys 99 178

Abstract: MYS 99 cj1w-cort21 NT31C-ST143-Ev3 MYS 99 133 E5CS-R1KJ 8203-M TL-X1R 4503m st MYS 99 102
Contextual Info: Product Code Description AA994896G 537.019.200 E2A 7033A 02A-M18KS08-WP-C1 5M OMC PF 1234C 11PFA PF 1235A 14PFA VAP 1001D 1VAP-1W VAP21001C 1VAP2-1 VAP21004H 1VAP2-2 VAP21015C 1VAP2-6 VE 2001G 1VE-10CA-11 VE 2002E 1VE-10CA-12 VE 2003C 1VE-10CA-13 VE 3001B

D424170

Abstract: UPD424170
Contextual Info: ‘ O 1962 L^ U íJ W NEC Electronics Inc. JHPD424170A/L, 42S4170A/L 262,144 X 16-Bit Dynamic CMOS RAM Prelim inary Information Description The pPD424170A/L and /jPD42S4170A/L are fast-page dynamic RAMs organized as 262,144 words by 16 bits and designed to operate from a single power supply.

REF-01 ch

Contextual Info: 13 12 M A T E R IA L S 10 A N D FIN IS H ES : HOUSING: ZINC A L L O Y R L A T E D SEE TAB LE C E N T E R C O N T A C T :B R A 5 S / P L A T E D GOLD IN S U L A T O R :T E F L O N O U T E R C O N T A C T :B E R Y L L IU N C O P P ER / P L A T E D FERRU LE: B R A S S /P L A T E D

W777

Abstract: electronica ddr
Contextual Info: H M 5 2 1 6 8 0 5 Preliminary S e r ie s 1,048,575-word x 8-bit x 2-bank Synchronous Dynamic RAM HITACHI All Inputs and outputs are referred to the rising edge of tbe clock input. The HM5216805 is offered in 2 banks for improved performance. Features •3J V Power supply

Contextual Info: 7s rrv hD/t75s/S/a7Jb5z9iiSIB3Vf FK J' V ALUMINUM ELECTROLYTIC CAPACITORS FOR PHOTO FLASH SERIES Electrolytic capacitors for photoflash applications with lug terminal. ♦ *§ S FEATURES Single anode foil construction. M ♦ ;i CAUTION hp#77 "J V i ll/ 7h P -7777-r> i