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    Vishay Intertechnologies

    Vishay Intertechnologies 376D156X0020B2BRZ

    Tantalum Capacitors - Solid Leaded 15UF 20V 20% B R-FR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 376D156X0020B2BRZ Tray 100
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    • 100 $8.79
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    770MIL Datasheets Context Search

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    MAFRIN0160

    Abstract: MAFRIN0377 symposium
    Contextual Info: ANI-003-C 铁氧体连接头 环行器 的最大功率承受峰值 电弧放电(俗称打火)与击穿电压之简介 引起电打火的因素很多且其机制复杂,诸如: 1.电极间的介质材料本身的击穿电压。 2.电路片的几何结构。


    Original     		ANI-003-C /60Hz, MAFRIN0160 MAFRIN0377 symposium PDF

    NPT25100

    Abstract: NPT25100B Gan on silicon substrate Gan on silicon transistor NPT25015 ECJ5YB2A105M atc600f ATC100B1R2BT AC780BM-F2 GaN TRANSISTOR
    Contextual Info: NPT25100 Datasheet Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power


    Original     		NPT25100 2700MHz 10MHz EAR99 NDS-001 NPT25100B Gan on silicon substrate Gan on silicon transistor NPT25015 ECJ5YB2A105M atc600f ATC100B1R2BT AC780BM-F2 GaN TRANSISTOR PDF