75NC Search Results

Contextual Info: SNN5010D Advanced N-Ch Power MOSFET DC/DC CONVERTER APPLICATIONS Features • • • • PIN Connection High Voltage : BVDSS=100V Min. Low Crss : Crss=130pF(Typ.) Low gate charge : Qg=75nC(Typ.) Low RDS(ON) : RDS(ON)=26m (Max.) D D G Ordering Information

Contextual Info: SNN5010D Advanced N-Ch Power MOSFET DC/DC CONVERTER APPLICATIONS Features • • • • PIN Connection High Voltage : BVDSS=100V Min. Low Crss : Crss=130pF(Typ.) Low gate charge : Qg=75nC(Typ.) Low RDS(ON) : RDS(ON)=26mΩ(Max.) D D G Ordering Information

75nC

Abstract: SNN5010D
Contextual Info: SNN5010D Semiconductor N-Channel Power MOSFET DC/DC Converter APPLICATIONS Features PIN Connection • High Voltage: BVDSS=100 Min. • Low Crss : Crss=130pF(Typ.) • Low gate charge : Qg=75nC(Typ.) • Low RDS(on) :RDS(on)=26mΩ(Max.) D D G G Ordering Information

snn5010d2

Contextual Info: SNN5010D2 Semiconductor N-Channel Power MOSFET DC/DC Converter APPLICATIONS Features PIN Connection • High Voltage: BVDSS=100 Min. • Low Crss : Crss=130pF(Typ.) • Low gate charge : Qg=75nC(Typ.) • Low RDS(on) :RDS(on)=26mΩ(Max.) D D G Ordering Information

WD7600

Contextual Info: WD76C20ALV INTRODUCTION 1.0 INTRODUCTION 1.1 DOCUMENT SCOPE • This data sheet applies to both the 3.3 volt or 5.0 volt or 3.3 volt and 5.0 volt mixed voltage WD76C20ALV device. The WD76C20ALV can be used with either a 5.0 volt power supply or a low voltage 3.3 volt power supply. Some references are

G15N60

Abstract: G15N60 IGBT PG-TO-263-3-2 PG-TO263-3-2 SGB15N60
Contextual Info: SGB15N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:

Contextual Info: MAX14850 Six-Channel Digital Isolator ABSOLUTE MAXIMUM RATINGS VCCA to to +6V VCCB to to +6V OUTA1, OUTA2 to GNDA. -0.3V to VCCA + 0.3V

WD7600

Abstract: S3V 77 57-DB3 CHN 535 S3V 83 WD76C20ALV D76C20ALV
Contextual Info: WD76C20ALV INTRODUCTION 1.0 INTRODUCTION 1.1 DOCUMENT SCOPE • This data sheet applies to both the 3.3 volt or 5.0 volt or 3.3 volt and 5.0 volt mixed voltage WD76C20ALV device. The WD76C20ALV can be used with either a 5.0 volt power supply or a low voltage 3.3 volt power supply. Some references are

DIAC DB3

Abstract: diac DB3 application note STW14NK50 BYV52-200 opto diac asymmetrical half bridge controller ROE EYS 06 ROE capacitor EYS asymmetrical half bridge converter AN1621
Contextual Info: AN1621 APPLICATION NOTE 300W SECONDARY CONTROLLED TWO-SWITCH FORWARD CONVERTER WITH L5991A 1 INTRODUCTION A typical off-line isolated switch-mode power supply has the controller located on the primary side of the transformer, whereas the output voltages to be controlled and the housekeeping functions are located on the secondary side. Usually the voltage feedback signal is transferred to the primary controller by using an optocoupler

i2c isolator

Contextual Info: 19-5192; Rev 0; 6/10 TION KIT EVALUA BLE AVAILA 12-Channel, High-Voltage Sensor, Smart Data-Acquisition Interface The MAX11068 is a programmable, highly integrated, high-voltage, 12-channel, battery-monitoring smart dataacquisition interface. It is optimized for use with batteries used in automotive systems, hybrid electric battery

Contextual Info: EVALUATION KIT AVAILABLE MAX11068 LE AVAILAB 12-Channel, High-Voltage Sensor, Smart Data-Acquisition Interface General Description The MAX11068 is a programmable, highly integrated, high-voltage, 12-channel, battery-monitoring smart dataacquisition interface. It is optimized for use with batteries used in automotive systems, hybrid electric battery

Contextual Info: SGB20N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:

G15N60

Abstract: PG-TO-263-3-2 PG-TO263-3-2 SGB15N60 G15N60 IGBT
Contextual Info: SGB15N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:

igbt 400V 20A

Abstract: Q67040-S4236 Q67041-A4712-A2 Q67041-A4712-A4 SGB20N60 SGP20N60 SGW20N60
Contextual Info: SGP20N60 SGB20N60, SGW20N60 Fast S-IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:

NTHS0603N01N1003FF

Abstract: MAX8934G 940mA LMK105BJ104KV MAX8934 THM 104 THERMISTOR max8943 3.7v -5v EMK212BJ106
Contextual Info: 19-5296; Rev 0; 6/10 Dual-Input Linear Charger, Smart Power Selector with Advanced Battery Temperature Monitoring The MAX8934G dual-input Li+/Li-Poly linear battery charger with Smart Power SelectorK safely charges a single Li+/Li-Poly cell in accordance with JEITA* recommendations. The MAX8934G monitors the battery temperature

Contextual Info: Ceramic Chip Capacitors Multilayer chip capacitors have a low residual inductance, an excellent frequency response and minimal stray capacitance since there are no leads. These characteristics enable design to be very close to the theoretical values of the capacitors.

Contextual Info: IHW25N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers :

H30R1602

Abstract: igbt 1600V 20A
Contextual Info: IHW30N160R2 Soft Switching Series TrenchStop Reverse Conducting RC- IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1600 V applications offers :

k10n60

Abstract: SKB10N60A
Contextual Info: SKB10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

K15N60

Abstract: SKP15N60 K15N60
Contextual Info: SKP15N60 SKW15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

g10n60

Abstract: SGB10N60A J-00M SGB10N60A equivalent
Contextual Info: SGB10N60A Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:

G20N60

Abstract: G20N60 IGBT
Contextual Info: SGP20N60 SGW20N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:

g20n60

Abstract: G20N60 IGBT
Contextual Info: SGB20N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:

Contextual Info: SGP15N60 SGB15N60, SGW15N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: