75339S Search Results

75339S Price and Stock

Filter by Manufacturer

Select Manufacturer


Fairchild Semiconductor Corporation HUF75339S3ST MOSFET N-Channel 55V 75A (Tc) TO-263-3 T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	HUF75339S3ST		1,450		1	1 - 10 - 100 $1.12 1000 $0.93 10000 $0.83	Buy Now
Harris Semiconductor HUF75339S3 MOSFET N-Channel 55V 70A (Tc) TO262
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	HUF75339S3		1,200		1	1 - 10 - 100 $0.28 1000 $0.23 10000 $0.21	Buy Now

75339S Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: HUF75339G3, HUF75339P3, 75339S3S Data Sheet December 2001 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	huf75339g3 huf75339p3 huf75339s3s	PDF
75339p Abstract: TA75339 504E3 75339G HUF75339G3 HUF75339P3 HUF75339S3S HUF75339S3ST TB334 Contextual Info: HUF75339G3, HUF75339P3, 75339S3S Data Sheet December 2001 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	huf75339g3 huf75339p3 huf75339s3s 97e-2 +11huf75339 00e-3 90e-2 95e-3 95e-2 75339p ta75339 504e3 75339g huf75339s3st tb334	PDF
75339P Abstract: 75339 HUF75339G3 35E-1 75339G HUF75339 HUF75339P3 HUF75339S3 HUF75339S3S HUF75339S3ST Contextual Info: HUF75339G3, HUF75339P3, 75339S3, 75339S3S S E M I C O N D U C T O R 70A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs August 1997 Features Description • 70A, 55V The HUF75339 N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced	Original	huf75339g3 huf75339p3 huf75339s3 huf75339s3s +7huf75339 1-800-4-harris 75339p 75339 35e-1 75339g huf75339s3st	PDF
75339p Abstract: 75339g TA75339 263A tic 263a 75339S F75339P3 Contextual Info: in te fsil HUF75339G3, HUF75339P3, 75339S3S D a ta S h e e t J u n e 1999 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	OCR Scan	huf75339g3 huf75339p3 huf75339s3s huf7s339g3 +8an7260 75339p 75339g ta75339 263a tic 263a 75339s f75339p3	PDF
75339P3 Contextual Info: HUF75339G3, HUF75339P3, 75339S3, 75339S3S Semiconductor Data Sheet 70A, 55V, 0.012 Ohm, N-Channel, UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	OCR Scan	huf75339g3 huf75339p3 huf75339s3 huf75339s3s +2o-263ab 75339p3	PDF
75339P3 Contextual Info: HUF75339G3, HUF75339P3, 75339S3, 75339S3S HARRIS S E M I C O N D U C T O R 70A, 55V, 0.012 Ohm, N-Channel, UltraFET Power MOSFETs March 1998 MM Features • 70A, 55V • Ultra Low On-Resistance, ros ON = 2i2 • Diode Exhibits Both High Speed and Soft Recovery	OCR Scan	huf75339g3 huf75339p3 huf75339s3 huf75339s3s +3tb334 1-800-4-harris 75339p3	PDF
16E-5 Abstract: HUF75339G3 HUF75339P3 HUF75339S3 HUF75339S3S HUF75339S3ST TA75339 TB334 75339S3 Contextual Info: HUF75339G3, HUF75339P3, 75339S3, 75339S3S S E M I C O N D U C T O R 70A, 55V, 0.012 Ohm, N-Channel, UltraFET Power MOSFETs March 1998 Features Description • 70A, 55V • Ultra Low On-Resistance, rDS ON = 0.012Ω • Diode Exhibits Both High Speed and Soft Recovery	Original	huf75339g3 huf75339p3 huf75339s3 huf75339s3s +6tb334 1-800-4-harris 16e-5 huf75339s3st ta75339 75339s3	PDF
65e9 transistor Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	1-888-intersil ms-012aa mo-153aa rf1k49090 +16rf1k49093 rf1k49092 itf87056dqt itf87072dk8t itf87008dqt rf1k49223 65e9 transistor transistor 75307d transistor 65e8 sd mosfet drive datasheet 4468 8 pin g40n60 rhr15120 equivalent 10n120bnd 76107d transistor 76121d emerson three phase dc motor driver service note	PDF
Contextual Info: HUFA75339G3, HUFA75339P3, 75339S3S TM Data Sheet November 2000 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	hufa75339g3 hufa75339p3 hufa75339s3s	PDF
75339p Abstract: 75339g HUF75339P HUF75339G3 HUF75339P3 HUF75339S3S HUF75339S3ST TA75339 TB334 Contextual Info: HUF75339G3, HUF75339P3, 75339S3S Data Sheet December 2001 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	huf75339g3 huf75339p3 huf75339s3s 75339p +575339g huf75339p huf75339s3st ta75339 tb334	PDF
75339p Abstract: 75339G HUF75339G3 HUF75339P3 HUF75339S3S HUF75339S3ST TA75339 TB334 75339 HUF75339P Contextual Info: HUF75339G3, HUF75339P3, 75339S3S Data Sheet June 1999 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	huf75339g3 huf75339p3 huf75339s3s 75339p +675339g huf75339s3st ta75339 tb334 75339 huf75339p	PDF
75339p Abstract: 75339g TA75339 75339 HUF75339G3 HUF75339P3 HUF75339S3S HUF75339S3ST TB334 504E3 Contextual Info: HUF75339G3, HUF75339P3, 75339S3S Semiconductor June 1999 Data Sheet 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	OCR Scan	huf75339g3 huf75339p3 huf75339s3s 54e-2 +1398e-1 99e-1 97e-2 huf75339 00e-3 90e-2 75339p 75339g ta75339 75339 huf75339s3st tb334 504e3	PDF
75339P Abstract: HUFA75339G3 HUFA75339P3 HUFA75339S3S 75339G HUFA75339S3ST TA75339 TB334 RG03 Contextual Info: HUFA75339G3, HUFA75339P3, 75339S3S Data Sheet November 2000 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	hufa75339g3 hufa75339p3 hufa75339s3s 75339p +575339g hufa75339s3st ta75339 tb334 rg03	PDF
Contextual Info: HUF75339G3, HUF75339P3, 75339S3S Semiconductor Data Sheet June 1999 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	OCR Scan	huf75339g3 huf75339p3 huf75339s3s 98e-1 +699e-1 97e-2 huf75339 00e-3 90e-2 95e-3	PDF

20e9 Contextual Info: HUF75339G3, HUF75339P3, 75339S3S Data Sheet December 2001 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	huf75339g3 huf75339p3 huf75339s3s 20e9	PDF
75339P Abstract: 75339G HUFA75339G3 HUFA75339P3 HUFA75339S3S HUFA75339S3ST TA75339 TB334 108e3 Contextual Info: HUFA75339G3, HUFA75339P3, 75339S3S Data Sheet December 2001 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	hufa75339g3 hufa75339p3 hufa75339s3s 75339p +575339g hufa75339s3st ta75339 tb334 108e3	PDF