108E3 Search Results

FD3055

Abstract: Fp3055 IS433 4078 relay RFP3055 TB334 AN7254 RFD3055 RFD3055SM RFD3055SM9A
Contextual Info: RFD3055, RFD3055SM, RFP3055 Data Sheet July 1999 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs • 12A, 60V Formerly developmental type TA49082. • rDS ON = 0.150Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve

FD3055

Abstract: fp3055 TA49082 IS433 RFD3055
Contextual Info: RFD3055, RFD3055SM, RFP3055 Data Sheet January 2002 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features • 12A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

FD3055

Abstract: Fp3055
Contextual Info: RFD3055, RFD3055SM, RFP3055 Data Sheet Title FD3 5, D30 SM, P30 bt A, V, 50 m, anwer OSTs utho eyrds terrpoon, July 1999 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

Contextual Info: HC5517 Data Sheet July 1998 3 REN Ringing SLIC For ISDN Modem/TA and WLL [ /Title HC55 17 /Subject (3 REN Ringing SLIC For ISDN Mode m/TA and WLL) /Autho r () /Keywords (Intersil Corporation, Telecom, SLICs, SLACs , Telephone, Telephony, WLL, Wireless Local

FD3055

Abstract: IS433 FD3055 HARRIS TA49082 mosfet motor dc 48v AN7254 AN7260 RFD3055 RFD3055SM RFP3055
Contextual Info: RFD3055, RFD3055SM RFP3055 S E M I C O N D U C T O R 12A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs MegaFETs February 1994 Features Packaging • 12A, 60V JEDEC TO-220AB TOP VIEW DRAIN (FLANGE) • rDS(ON) = 0.150Ω • Temperature Compensating PSPICE Model

scr c108

Abstract: emergency light circuit SCR universal MOTOR speed control using scr General electric SCR SCR TRIGGER circuit dc charger scr battery charger scr driver dc motor speed control 20 watt emergency light circuit DC motor speed control circuit with SCR coffee vending machine dc motor circuit
Contextual Info: Silicon Controlled Rectifier Flat Pack Desip Model C108 Up to 600 Volts 5 Amperes RMS P R O D U C T FE A TU R E S o The Type C108 Silicon Controlled Rectifier (SC R ) has the following outstanding features: o C I0 8 TYPE 4 LOW COST C 1 08 TYPE 2 Operates directly from low signal

diode a4W

Abstract: zener 4147 ringing tip ring pots telephone 90v 48v ZENER DIODE t2 Adjustable Power Supply Schematic Diagram 40vdc NTE cross TIP 34 pnp spdt 12v 150 OHM relay datasheet 5vdc, 150ma power relay a4w 41
Contextual Info: HC5517 Data Sheet July 1998 3 REN Ringing SLIC For ISDN Modem/TA and WLL File Number 4147.2 Features • Thru-SLIC Open Circuit Ringing Voltage up to 77VPEAK/54VRMS, 3 REN Capability at 44VRMS he HC5517 is a ringing SLIC designed to accommodate a wide variety of local loop applications. The various applications

AN9607

Abstract: HC5517 Adjustable Power Supply Schematic Diagram 40vdc
Contextual Info: NS ESIG D W TM R NE UCT D FO E PROD E D MEN ITUT 5186 COM SUBST 85, HC5 E R 551 NOT SSIBLE ,Data 1 HC Sheet 7 PO 1 5 HC5 3 REN Ringing SLIC For ISDN Modem/TA and WLL 4147.3 • Sinusoidal Ringing Capability • DI Process Provides Substrate Latch Up Immunity when

FD3055

Abstract: IS433 Fp3055 RFP3055 TB334 AN7254 RFD3055 RFD3055SM RFD3055SM9A
Contextual Info: RFD3055, RFD3055SM, RFP3055 Data Sheet January 2002 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features • 12A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

fd3055

Contextual Info: RFD3055, RFD3055SM, RFP3055 Data Sheet January 2002 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features • 12A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

IS433

Abstract: FD3055 RFP3055
Contextual Info: RFD3055, RFD3055SM RFP3055 C S JHARRIS U J S E M I C O N D U C T O R 12A, 60V, Avalanche Rated, N-Channel Enhancem ent-M ode Power M OSFETs MegaFETs February 1994 Packaging Features JEDEC TO-220AB ’ VIEW • 12 A ,6 0 V • r DS{ON)= 0 .1 5 0 Q z_ uT o

Contextual Info: RFD3055, RFD3055SM, RFP3055 Semiconductor Data Sheet July 1999 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs File Number 3648.2 Features • 12A, 60V These are N-Channel enhancem ent mode silicon gate • rDS ON = 0.150i2 power field effect transistors. They are advanced power

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

Contextual Info: f f i H A R R HC5517 IS S E M I C O N D U C T O R Ringing SLIC Subscriber Line Interface Circuit August 1996 Features Description Thru-SLIC Ringing up to 44Vrm§ into 3 REN at 10% THD with a -80V Battery • Sinusoidal Ringing Capability The HC5517 is a ringing SLIC designed to accommodate a

ringing tip ring pots telephone 90v 48v

Abstract: AN9607 HC5517
Contextual Info: HC5517 S E M I C O N D U C T O R Ringing SLIC Subscriber Line Interface Circuit January 1997 Features Description • Thru-SLIC Open Circuit Ringing Voltage up to 77VPEAK/54VRMS, 3 REN Capability at 44VRMS The HC5517 is a ringing SLIC designed to accommodate a

AN549

Abstract: AN9607 HC5517 ringing tip ring pots telephone 90v 48v Adjustable Power Supply Schematic Diagram 40vdc
Contextual Info: IGNS DES W E T DUC OR N ED F TE PRO 6 D N 8 r at ME ITU 51 COM SUBST 85, HC5 rt Cente c E R 1 E o 5 /ts pp NOT SSIBL HC5 Sheet ,Data l Su l.com PO 5171 echnica .intersi 5 C H w T r ww t our ntac ERSIL o o c r T o 8-IN 1-88 3 REN Ringing SLIC For ISDN Modem/TA

Contextual Info: H C 55 17 S E M I C O N D U C T O R Ringing SLIC Subscriber Line Interface Circuit January 1997 Features Description • T h r u - S L IC Open Circuit Ringing Voltage up to 7 7 V PEAK/54 V RMS, 3 REN Capability at 4 4 V RMS The HG5517 is a ringing SLIG designed to accommodate a