75 WATT NPN SWITCHING TRANSISTOR Search Results

MMBF4856

Abstract: pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

BC547 sot package sot-23

Abstract: BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

BC337 BC547

Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

BC327 BC337 noise figure

Abstract: BC337 Transistor BC307b MPS5172 "cross-reference" BC237 BC307 BC212
Contextual Info: CHAPTER 1 Selector Guide http://onsemi.com 5 http://onsemi.com 6 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11

2N3906 Darlington transistor

Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212
Contextual Info: CHAPTER 1 Selector Guide http://onsemi.com 5 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11

D40CI

Abstract: TQ-202 D40C7 D40C1 800 watts audio amp D40C D40C4 16 amp npn darlington power transistors 30734
Contextual Info: VERY HIGH GAIN D40C Series NPN POWER DARLINGTON TRANSISTORS 30-50 VOLTS .5 AMP, 6.25 WATTS Designed for driver, regulator, touch switch, I.C. driver, audio output, relay substitute, oscillator, servo-arnplifier, and capacitor multiplier applications. NPN COLLECTOR

C2N2222A

Abstract: 2N2222A
Contextual Info: 580 Pleasant St. Watertown, MA 02172 PH: 617 926-0404 FAX: (617) 924-1235 2N2222A Features • • • • Meets MIL-S-19500/255 Collector-Base Voltage 75 Collector Current: 800mA Fast Switching 335 nS 75 Volts 0.8 Amps NPN BIPOLAR TRANSISTOR Maximum Ratings

D40C4

Contextual Info: D40C Series File Number 2 3 3 3 0.5-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS hpE Min. — 10,000 1.33 Watt power dissipation at T a = 25° Features: • Operates from 1C w ithout predriver JEDEC TO-202AB Application: POWER TRANSISTO RS

ZTX649 equivalent

Abstract: ZTX649 DSA003771
Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ZTX649 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Output Capacitance Cobo 25 50 pF VCB=10V f=1MHz Switching Times ton 55 ns toff 300 ns IC=500mA, VCC=10V

rca transistor manual

Abstract: rca case outlines diode 1N539 2N301 2N140 transistor bf 175 rca thyristor manual drift-field 2N1637 transistor rca 2n173
Contextual Info: RCA Transistor Manual T h is book has been prepared to assist those who work or experiment with semi­ conductor devices and circuits. It will be useful to engineers, service technicians, edu­ cators, students, radio amateurs, hobbyists, and others technically interested in transis­

to225

Abstract: MJE802 MJE800 MJE702 MJE703 mje802g MJE803 MJE700 to-225 MJE700G
Contextual Info: MJE700, MJE702, MJE703 PNP - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC

JE802

Abstract: JE700 JE803 JE700 MOTOROLA JE702 JE703 JE800 75 watt npn switching transistor MJE700T
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP M JE700,T M JE702 Plastic Darlington Com plem entary Silicon Power Transistors M JE703 . . . designed lor general-purpose amplifier and low-speed switching applications. • • • High DC Current Gain — hFE = 2000 Typ @ lc = 2.0 Adc

Contextual Info: -r-33-ôl BD533, BD534, BD535, BD536, BD537, BD538 HARRIS SEMICOND SECTOR 5bE J> • Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors File Number iz3 6 43G5571 Q04Db7S 3^1 IHAS TERMINAL DESIGNATIONS General-Purpose Medium-Power Types for Switching and Amplifier Applications

2N3414

Abstract: 2N3416
Contextual Info: CENTRAL SEMICONDUCTOR t.1 r - Z' f -Z'rX nimfc.3 □□00E54 0 X 2N3A1 sss&isfüieondöetoa' €@rp. Centrai s@mi€@näuetor Corp. Central Semiconductor Corp. Central semiconductor Corp. 5 2N3416 2N3417 JP> NPN Silicon Transistor 145 Adams Avenue Hauppauge, New York 1 1 7 8 8

transistor mje802

Contextual Info: ON Semiconductor PNP MJE700 Plastic Darlington Complementary Silicon Power Transistors MJE702 MJE703 NPN . . . designed for general−purpose amplifier and low−speed switching applications. MJE800 • High DC Current Gain — • • MJE802 hFE = 2000 Typ) @ IC

Contextual Info: SbE J> m HARRIS SEUXCOND SECTOR 4302571 0040A70 b?l M H A S File Number 2374 G E 1 0 0 1 5 ,1 6 ,2 0 ,2 1 ,2 2 ,2 3 T 3 S - 2 -J Silicon N-P-N Darlington Power Transistors TERM INAL DESIGNATIONS FU & O E The GE10015, GE10016and GE10020 thru GE10023 series

BD53B

Abstract: bd536 BDS34 BD538
Contextual Info: BD533, BD534, BD535, BD536, BD537, BD538 Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors File Number 1236 TERM INAL DESIGNATIONS o General-Purpose Medium-Power Types for Switching and Amplifier Applications t : Features: • Low saturation voltages

MSC027

Contextual Info: Micmsemi Watertown, M A 02172 PH: <B17 >26-0404 FAX: 617) 924-1296 2N2222A Features • • « « Meets MIL-S-19500/255 Collector-Base Voltage 75 Collector Current 800mA f ast 'Switching 335 nS 75 Volts 0.8 Amps NPN BIPOLAR TRANSISTOR Maximum Ratings P ¿T ':G

Contextual Info: MJE700, MJE702, MJE703 PNP - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC

MJE703

Abstract: MJE800 MJE802 MJE803 MSD6100 1N5825 MJE700 MJE700G MJE702 NEW TRANSISTOR
Contextual Info: MJE700, MJE702, MJE703 PNP - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC

mje802

Abstract: transistor mje802 MJE703G MJE702 mje800 to225
Contextual Info: MJE700, MJE702, MJE703 PNP - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC

100 amp npn darlington power transistors

Abstract: complementary npn-pnp 500 watt power circuit diagram to225 10 amp npn darlington power transistors 16 amp npn darlington power transistors darlington complementary power amplifier SILICON COMPLEMENTARY transistors darlington Darlington transistors 703 H
Contextual Info: MJE700, MJE702, MJE703 PNP - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC

D40C4

Abstract: D40C7 NPN POWER DARLINGTON TRANSISTORS
Contextual Info: 3 8 7 5 0 Í ^ G E SOLID STATE ~~Ql 3075001 001^037 4 ^ J ~ VERY HIGH GAIN NPN POWER DARLINGTON TRANSISTORS T-33-29 D40C Series 30-50 VOLTS .5 AMP, 6.25 WATTS Designed fordriver, regulator, touch switch, I.C. driver, audio output,'relay substitute, oscillator, servo~ampllfier, and

mmbr901lt1

Abstract: 75 watt npn switching transistor MARKING 7A sot-23
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR901LT1, T3 NPN Silicon H igh-Frequency Transistor Designed primarily for use in high-gain, low-noise small-signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching