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    GE10020 Search Results

    GE10020 Datasheets (38)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    GE10020
    General Electric Power Transistor Data Book 1985 Scan PDF 381.76KB 7
    GE10020
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 121.88KB 1
    GE10020
    Unknown Darlington Power Transistors Scan PDF 185.12KB 1
    badge 2SA1013(RANGE:100-200)
    JCET Group 2SA1013 PNP transistor in TO-92MOD package with -160V collector-base and collector-emitter voltage, -1A continuous collector current, 0.9W power dissipation, DC current gain from 60 to 320, and transition frequency of 15MHz. Original PDF
    badge MMBTA42(RANGE:100-200)
    JCET Group MMBTA42 NPN transistor in SOT-23 package featuring 300 V collector-base and collector-emitter breakdown voltage, low collector-emitter saturation voltage of 0.2 V at 20 mA base current, DC current gain up to 200, and transition frequency of 50 MHz. Original PDF
    badge 2SB649A(RANGE:100-200)
    JCET Group PNP transistor in TO-126 package, rated for -120V or -160V collector-emitter voltage (2SB649/2SB649A), with 1.5A continuous collector current, 1W power dissipation, and DC current gain ranging from 60 to 320 depending on rank. Original PDF
    badge 2SD1802(RANGE:100-200)
    JCET Group NPN transistor in TO-252-2L plastic package featuring 50 V collector-emitter voltage, 3 A continuous collector current, low collector-emitter saturation voltage of 0.5 V, high DC current gain up to 560, and transition frequency of 150 MHz. Original PDF
    badge 2SC1923(RANGE:100-200)
    JCET Group NPN transistor in TO-92 package, rated for 30 V collector-emitter voltage, 100 mW power dissipation, with DC current gain from 40 to 200 and transition frequency of 550 MHz. Original PDF
    badge 2SC4215(RANGE:100-200)
    JCET Group NPN transistor in SOT-323 package with 30 V collector-emitter voltage, 20 mA continuous collector current, 260 MHz transition frequency, low noise figure of 2 dB at 100 MHz, and reverse transfer capacitance of 0.55 pF. Original PDF
    badge MMBT5401(RANGE:100-200)
    JCET Group MMBT5401 PNP transistor in SOT-23 package, with -150 V collector-emitter voltage, -0.6 A collector current, 0.3 W power dissipation, and DC current gain up to 300, suited for medium power amplification and switching applications. Original PDF
    badge 2SB764(RANGE:100-200)
    JCET Group PNP transistor in TO-92L package, with 50 V collector-emitter breakdown voltage, 1 A collector current, 750 mW power dissipation, and DC current gain ranging from 60 to 320, suitable for general purpose switching applications. Original PDF
    badge 2SB834(RANGE:100-200)
    JCET Group PNP transistor in TO-220-3L package with collector-emitter voltage of -60V, continuous collector current of -3A, DC current gain of 60-200, and low collector-emitter saturation voltage of -1V at -3A. Original PDF
    badge 2SB1261-Z(RANGE:100-200)
    JCET Group PNP transistor in TO-251-3L package with -60V collector-emitter voltage, -3A continuous collector current, high hFE, low VCEsat of -0.3V at -1.5A, and transition frequency of 50MHz. Original PDF
    badge 2SD667(RANGE:100-200)
    JCET Group NPN transistor in TO-92L package, rated for 80V or 100V collector-emitter voltage, 1A continuous collector current, with DC current gain from 60 to 320 and transition frequency of 140MHz. Original PDF
    badge 2SD880(RANGE:100-200)
    JCET Group NPN transistor in TO-220-3L package, designed for low frequency power amplification, with 60 V collector-emitter breakdown voltage, 3 A continuous collector current, 1.5 W power dissipation, and DC current gain ranging from 60 to 300. Original PDF
    badge 2SC4548(RANGE:100-200)
    JCET Group NPN transistor in SOT-89-3L package with 400 V collector-base and collector-emitter breakdown voltages, 200 mA collector current, 500 mW power dissipation, and DC current gain ranging from 60 to 200. Original PDF
    badge 2SD1815(RANGE:100-200)
    JCET Group NPN transistor in TO-252-2L package with 100V collector-emitter voltage, 3A continuous collector current, 1W power dissipation, high transition frequency of 180MHz, and low collector-emitter saturation voltage of 0.4V at 1.5A. Original PDF
    badge MPSA44(RANGE:100-200)
    JCET Group NPN transistor in TO-92 package with 400 V collector-emitter breakdown voltage, 0.3 A continuous collector current, 625 mW power dissipation, and DC current gain ranging from 40 to 200 depending on test conditions. Original PDF
    badge MPS2222A(RANGE:100-200)
    JCET Group NPN transistor in TO-92 plastic package, rated for 40 V collector-emitter voltage, 0.6 A continuous collector current, with DC current gain ranging from 100 to 300 and transition frequency of 300 MHz. Original PDF
    badge D882(RANGE:100-200)
    JCET Group NPN transistor in SOT-89-3L package with 30V collector-emitter voltage, 3A continuous collector current, 0.5W power dissipation, and DC current gain ranging from 60 to 400, suitable for general-purpose switching and amplification applications. Original PDF
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    GE10020 Price and Stock

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    Rochester Electronics LLC GE10020

    TRANS NPN DARL 300V 60A TO-204AE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey GE10020 Bulk 53 53
    • 1 -
    • 10 -
    • 100 $5.66
    • 1000 $5.66
    • 10000 $5.66
    Buy Now

    Harris Semiconductor GE10020

    Power Bipolar Transistor, 60A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics GE10020 53 1
    • 1 -
    • 10 -
    • 100 $4.11
    • 1000 $3.68
    • 10000 $3.46
    Buy Now

    GE10020 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    GE10016

    Abstract: RCA8766D RCA9202C BUX37 RCA9203 GE10015 GE10020 GE10021 GE10022 RCA8766
    Contextual Info: Bipolar Power Transistors Darlington Power Transistors Continued hpE •C A T ype No. v CEO V JEDEC Package PT VCE V *C A w D evices have Integ ral Base S p e e d -u p D iode G E10 0 1 5 FAMILY (n -p -n ) • 4 GE10015 GE10016 GE10020 GE10021 GE10022 GE100&3


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    GE10015 GE10016 GE10020 T0-204AE/ GE10021 GE10022 GE100 RCA8766 RCA8766D RCA9202C BUX37 RCA9203 PDF

    Contextual Info: SbE J> m HARRIS SEUXCOND SECTOR 4302571 0040A70 b?l M H A S File Number 2374 G E 1 0 0 1 5 ,1 6 ,2 0 ,2 1 ,2 2 ,2 3 T 3 S - 2 -J Silicon N-P-N Darlington Power Transistors TERM INAL DESIGNATIONS FU & O E The GE10015, GE10016and GE10020 thru GE10023 series


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    0040A70 GE10015, GE10016and GE10020 GE10023 O-204AE T0-204AE 004007b GE10015 PDF

    GE10023

    Contextual Info: GE10015,16,20,21,22,23 File Number Silicon N-P-N Darlington Power T ransistors 2374 TERM IN A L D ESIG N A TIO N S c FLANGE The GE10015, GE10016and GE10020thru GE10023 series of silicon n-p-n power Darlington transistors are designed for use in power switching applications requiring highvoltage capability and fast switching speeds. They are


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    GE10015 GE10015, GE10016and GE10020thru GE10023 T0-204AE O-204AE GE10020 GE10021 PDF

    GE10016

    Abstract: GE10023 GE10015 GE10020 GE10022 GEI0020 GE1001
    Contextual Info: u i a u Q D P P n GE10015,16, 20.21.22.23 NPN POWER DARLINGTON TRANSISTORS 500 VOLTS 40-60 AMPS, 250 WATTS These devices are designed for use in high speed switching applications, such as off-line switching power supplies, AC & DC motor control, UPS systems, ultra sonic equipment and


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    GE10015 S30fl T0-204AE tjs150Â QEI00I5, OEI0020 OE10022, GE10016 GE10023 GE10020 GE10022 GEI0020 GE1001 PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    PDF

    IRF 1640

    Abstract: GD4049B IRF 1640 G GAL16V8-20LNC gal22cv10 HA2-2725-5 HA2-2655-5 HA2-2650-2 irf 2030 GAL22CV10-10LVC
    Contextual Info: • M fr Qty/Note 7 A0 D3 M5 000035fl ITS ■ Part Num ber M fr Qty/Note Part Num ber Mfr SM C 6658 GAL20V8QS-10LV! NSC 1995 HA1-2541-7 H AR 460 SMC 13390 GAL20V8QS-15LNC NSC 15169 HA1-2541/883 H AR 387 SMC 401 GAL20V8QS-15LVC NSC 1031 HA1-2655-5 H AR 210


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    FDC92C36BP FDC92C36P FDC92C38BP FDC92C33BT FDC92C39BUP FDC92C39BTBI FDC92C39BTCD FDC92C39BTLJP FDC92C39BTP FDC92C39LJP IRF 1640 GD4049B IRF 1640 G GAL16V8-20LNC gal22cv10 HA2-2725-5 HA2-2655-5 HA2-2650-2 irf 2030 GAL22CV10-10LVC PDF