GE10020 Search Results
GE10020 Datasheets (38)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| GE10020 |
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Power Transistor Data Book 1985 | Scan | 381.76KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GE10020 | Unknown | Semiconductor Master Cross Reference Guide | Scan | 121.88KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GE10020 | Unknown | Darlington Power Transistors | Scan | 185.12KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1013(RANGE:100-200)
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JCET Group | 2SA1013 PNP transistor in TO-92MOD package with -160V collector-base and collector-emitter voltage, -1A continuous collector current, 0.9W power dissipation, DC current gain from 60 to 320, and transition frequency of 15MHz. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBTA42(RANGE:100-200)
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JCET Group | MMBTA42 NPN transistor in SOT-23 package featuring 300 V collector-base and collector-emitter breakdown voltage, low collector-emitter saturation voltage of 0.2 V at 20 mA base current, DC current gain up to 200, and transition frequency of 50 MHz. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SB649A(RANGE:100-200)
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JCET Group | PNP transistor in TO-126 package, rated for -120V or -160V collector-emitter voltage (2SB649/2SB649A), with 1.5A continuous collector current, 1W power dissipation, and DC current gain ranging from 60 to 320 depending on rank. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SD1802(RANGE:100-200)
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JCET Group | NPN transistor in TO-252-2L plastic package featuring 50 V collector-emitter voltage, 3 A continuous collector current, low collector-emitter saturation voltage of 0.5 V, high DC current gain up to 560, and transition frequency of 150 MHz. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC1923(RANGE:100-200)
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JCET Group | NPN transistor in TO-92 package, rated for 30 V collector-emitter voltage, 100 mW power dissipation, with DC current gain from 40 to 200 and transition frequency of 550 MHz. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC4215(RANGE:100-200)
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JCET Group | NPN transistor in SOT-323 package with 30 V collector-emitter voltage, 20 mA continuous collector current, 260 MHz transition frequency, low noise figure of 2 dB at 100 MHz, and reverse transfer capacitance of 0.55 pF. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT5401(RANGE:100-200)
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JCET Group | MMBT5401 PNP transistor in SOT-23 package, with -150 V collector-emitter voltage, -0.6 A collector current, 0.3 W power dissipation, and DC current gain up to 300, suited for medium power amplification and switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SB764(RANGE:100-200)
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JCET Group | PNP transistor in TO-92L package, with 50 V collector-emitter breakdown voltage, 1 A collector current, 750 mW power dissipation, and DC current gain ranging from 60 to 320, suitable for general purpose switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SB834(RANGE:100-200)
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JCET Group | PNP transistor in TO-220-3L package with collector-emitter voltage of -60V, continuous collector current of -3A, DC current gain of 60-200, and low collector-emitter saturation voltage of -1V at -3A. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SB1261-Z(RANGE:100-200)
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JCET Group | PNP transistor in TO-251-3L package with -60V collector-emitter voltage, -3A continuous collector current, high hFE, low VCEsat of -0.3V at -1.5A, and transition frequency of 50MHz. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SD667(RANGE:100-200)
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JCET Group | NPN transistor in TO-92L package, rated for 80V or 100V collector-emitter voltage, 1A continuous collector current, with DC current gain from 60 to 320 and transition frequency of 140MHz. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SD880(RANGE:100-200)
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JCET Group | NPN transistor in TO-220-3L package, designed for low frequency power amplification, with 60 V collector-emitter breakdown voltage, 3 A continuous collector current, 1.5 W power dissipation, and DC current gain ranging from 60 to 300. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC4548(RANGE:100-200)
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JCET Group | NPN transistor in SOT-89-3L package with 400 V collector-base and collector-emitter breakdown voltages, 200 mA collector current, 500 mW power dissipation, and DC current gain ranging from 60 to 200. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SD1815(RANGE:100-200)
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JCET Group | NPN transistor in TO-252-2L package with 100V collector-emitter voltage, 3A continuous collector current, 1W power dissipation, high transition frequency of 180MHz, and low collector-emitter saturation voltage of 0.4V at 1.5A. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MPSA44(RANGE:100-200)
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JCET Group | NPN transistor in TO-92 package with 400 V collector-emitter breakdown voltage, 0.3 A continuous collector current, 625 mW power dissipation, and DC current gain ranging from 40 to 200 depending on test conditions. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MPS2222A(RANGE:100-200)
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JCET Group | NPN transistor in TO-92 plastic package, rated for 40 V collector-emitter voltage, 0.6 A continuous collector current, with DC current gain ranging from 100 to 300 and transition frequency of 300 MHz. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
D882(RANGE:100-200)
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JCET Group | NPN transistor in SOT-89-3L package with 30V collector-emitter voltage, 3A continuous collector current, 0.5W power dissipation, and DC current gain ranging from 60 to 400, suitable for general-purpose switching and amplification applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
GE10020 Price and Stock
Rochester Electronics LLC GE10020TRANS NPN DARL 300V 60A TO-204AE |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GE10020 | Bulk | 53 | 53 |
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Buy Now | |||||
Harris Semiconductor GE10020Power Bipolar Transistor, 60A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GE10020 | 53 | 1 |
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Buy Now | ||||||
GE10020 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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GE10016
Abstract: RCA8766D RCA9202C BUX37 RCA9203 GE10015 GE10020 GE10021 GE10022 RCA8766
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OCR Scan |
GE10015 GE10016 GE10020 T0-204AE/ GE10021 GE10022 GE100 RCA8766 RCA8766D RCA9202C BUX37 RCA9203 | |
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Contextual Info: SbE J> m HARRIS SEUXCOND SECTOR 4302571 0040A70 b?l M H A S File Number 2374 G E 1 0 0 1 5 ,1 6 ,2 0 ,2 1 ,2 2 ,2 3 T 3 S - 2 -J Silicon N-P-N Darlington Power Transistors TERM INAL DESIGNATIONS FU & O E The GE10015, GE10016and GE10020 thru GE10023 series |
OCR Scan |
0040A70 GE10015, GE10016and GE10020 GE10023 O-204AE T0-204AE 004007b GE10015 | |
GE10023Contextual Info: GE10015,16,20,21,22,23 File Number Silicon N-P-N Darlington Power T ransistors 2374 TERM IN A L D ESIG N A TIO N S c FLANGE The GE10015, GE10016and GE10020thru GE10023 series of silicon n-p-n power Darlington transistors are designed for use in power switching applications requiring highvoltage capability and fast switching speeds. They are |
OCR Scan |
GE10015 GE10015, GE10016and GE10020thru GE10023 T0-204AE O-204AE GE10020 GE10021 | |
GE10016
Abstract: GE10023 GE10015 GE10020 GE10022 GEI0020 GE1001
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OCR Scan |
GE10015 S30fl T0-204AE tjs150Â QEI00I5, OEI0020 OE10022, GE10016 GE10023 GE10020 GE10022 GEI0020 GE1001 | |
EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
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OCR Scan |
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IRF 1640
Abstract: GD4049B IRF 1640 G GAL16V8-20LNC gal22cv10 HA2-2725-5 HA2-2655-5 HA2-2650-2 irf 2030 GAL22CV10-10LVC
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OCR Scan |
FDC92C36BP FDC92C36P FDC92C38BP FDC92C33BT FDC92C39BUP FDC92C39BTBI FDC92C39BTCD FDC92C39BTLJP FDC92C39BTP FDC92C39LJP IRF 1640 GD4049B IRF 1640 G GAL16V8-20LNC gal22cv10 HA2-2725-5 HA2-2655-5 HA2-2650-2 irf 2030 GAL22CV10-10LVC |