74S289 RAM Search Results

Contextual Info: 289 CONNECTION DIAGRAM PINOUT A 54S/74S289 b i 1 5 4 L S /7 4 L S 2 8 9 C u <7 ao[T T i l vcc 64-BIT RANDOM ACCESS MEMORY «D E Tsl Ai With O pen-Collector Outputs WE [ T 14] A 2 Di [7 13] A 3 0 ,[T T2ID 4 D2 [ ? T T lo a Ö2 U Tö] D 3 D ESC R IPTIO N — The '289 is a high speed 64-bit RAM organized as a 16word by 4-b it array. Address inputs are buffered to minim ize loading, and

74LS289

Abstract: 74S289PC 54LS289DM 54S289DM 74LS289DC 74LS289FC 74LS289PC 74S289DC 74S289FC S289T
Contextual Info: 289 b 11 54S/74S289 54LS /74LS 289 <T' C O N N E C T IO N D IA G R A M P IN O U T A U <7 ao[T 64-BIT RANDOM ACCESS MEMORY Til vcc Tsl Ai csGE 771 A2 771 a 3 T2ID4 [7 [7 5, [I 02 [][ 52|T W ith O p e n -C o lle c to r O utputs we Oi D E S C R IP T IO N — T he ’289 is a h igh speed 6 4 -b it RAM o rg a n ize d as a 16w o rd by 4 -b it array. A d d re ss in p u ts are b u ffe re d to m in im ize lo a d in g , and

N82S131

Abstract: N82S141 n82s123 MCM10149 MCM7620 MCM7621 MCM7641C MCM7643C MCM7681C N82HS137
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION BIPOLAR MEMORY CROSS REFERENCE BIPOLAR M EM O RY CROSS REFERENCE Continued MOTOROLA MCM10149 MCM7620 MCM7621 MCM7643C MCM7641C MCM7681C MCM82708C MCM7685C 4064 4256 10422 10470 SIG NETICS T.l. SIG NETICS *10149 N82S130 N82S131

74s* programming

Abstract: N82S16 prom 256x4 bit MCM10149 MCM7620 MCM7621 MCM7641C MCM7643C MCM7681C N82HS137
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION BIPOLAR M EM ORY CROSS REFERENCE BIPOLAR M EM O RY CROSS REFERENCE Continued MOTOROLA MCM10149 MCM7620 MCM7621 MCM7643C MCM7641C MCM7681C MCM82708C MCM7685C 4064 4256 10422 10470 SIGNETICS T.l. SIGNETICS *10149 N82S130 N82S131

74s289 ram

Contextual Info: Am27S02/27S03 64-Bit Inverting-Output Bipolar RAM DISTINCTIVE CHARACTERISTICS Fully decoded 16 word x 4-bit low-power Schottky RAMS Ultra-Fast "A " Version: Address access time 25ns Internal ECL circuitry for optimum speed/power perfor­ mance over voltage and temperature

MB7052

Abstract: MB7051 MB7122 27s49 MB7057 27S19 27s13 PROM intel 3601 MB7058 MB7053
Contextual Info: TTL/Bipolar PROM / RAM Reference Guide V2.f3 TS = Tri-State output OC = Open Collector output Hacked, copied, edited and extended by W.G. to give it a decent shape and handy booklet form The main part is extracted from

2AM27

Abstract: 27S02 amd am2 pin diagram am2 power CIRCUIT diagram
Contextual Info: Page 0001 11/23/88 15:06:24 Tx: AM27S02 TED • Ft: AMD FMT twforiwtfcm S < r v ie> fc Inc. Am27S02/Am27S03 64-Sit Inverting-Output Bipolar RAM > a DISTINCTIVE CHARACTERISTICS Fully 16 w ord x 4-b it low -pow er S chottky RAMS Ultra-Fast Version; Address access time 25 ns

27S03

Contextual Info: Am27S02/27S03 64-Bit Inverting-Output Bipolar RAM • • • Fully decoded 16 word x 4-bit low-power Schottky RAMS Ultra-Fast " A " Version: Address access time 25ns Internal E C l circuitry for optimum speed/power perfor­ mance over voltage and temperature

AM27S03

Abstract: A35CS AM27S02 20D3 74S189 74S289 fmuml
Contextual Info: Page 0001 11/23/88 15:06:24 Tx: AM27S02 TED • Ft: AMD FMT twforiwtfcm S< rv ie> fc Inc. Am 27S02/Am 27S03 64-Sit Inverting-Output Bipolar RAM > a DISTINCTIVE CH A R A C T E R IST IC S Fully 16 word x 4-bit low-power Schottky RAM S Ultra-Fast Version; Address access time 25 ns

74S189

Abstract: 74S289 AM27S02 AM27S02PC CD000831 27S03
Contextual Info: A m 2 7 S 0 2 /2 7 S 0 3 64-Bit Inverting-Output Bipolar RAM • • Fully decoded 16 word x 4-bit low-power Schottky RAMS Ultra-Fast "A " Version: Address access time 25ns Internal ECL circuitry for optimum speed/power perfor­ mance over voltage and temperature

74s288

Abstract: SIGNETICS 74S188 74S188 74S287 74S474 mmi 6331 74S387 signetics 82s23 H6555 MMI 6349
Contextual Info: S ig n e tic s Memories BIPOLAR M EMORY CROSS R E F E R E N C E AMD' 2700/27 LSOO 2701/27LSÛ 1 27S08/27LS08 27S09/27LS09 27S10 27S11 3101 310 1 A/27S02 93415 93415A 93425 93425A F A IR C H IL D 10149 10144 1 0410 10415 93403 93406 93411 93411A 93415 93415A

74S189

Abstract: 74S289 AM27S02
Contextual Info: Page 0001 11/23/88 15:06:24 Tx: AM27S02 TED • Ft: AMD FMT twforiwtfcm S< rv ie> fc Inc. Am 27S02/Am 27S03 64-Sit Inverting-Output Bipolar RAM > a DISTINCTIVE CHARACTERISTICS Fully 16 w ord x 4-b it low -pow er S chottky RAMS Ultra-Fast Version; Address access time 25 ns

AM27S03

Contextual Info: ADV MICRO {MEMORY} 0257528 0ES7S5ä D05SSti3 Q T|~ ADV M ICRO MEMORY 89D 25563 D ^ T -4 6 -2 3 -0 8 Am27S02/Am27S03 P 64-Bit Inverting-Output Bipolar RAM DISTINCTIVE CHARACTERISTICS • • • Fully decoded 16 word x 4-bit low-power Schottky RAMS Ultra-Fast Version: Address access time 15 ns

IC 74187

Abstract: lt 6246 MMI 6330 74s188 ic 74s201 6301-1 prom HARRIS 8249 mmi 6331 82S2708 74S288
Contextual Info: Siginetics Integrated Circuits Schottky T T L Schottky T T L 74S Series Cont. TYPE NO. N74S260N N74S280AN N74S287N N74S288N N74S289N DE SC R IPTIO N Dual 5 -ln p u t N O R Gate 9 -B it O dd/E ven P arity G enerator/Checker . 102 4-B it Prom -3 State? o /p

MH 74141

Abstract: Tesla katalog MH74S04 MH74188 information applikation MH74S287 mikroelektronik RFT CDB404E ucy 74132 MZH 115
Contextual Info: m o N r ^ e le l- c fe n a n il- c Information Applikation ._ B|B Information Applikation Heft 26: IMPORT-IS Teil 2 i ' . • fbkj veb Halbleiterwerk frankfurt/oder Ü B d batriab im vab ko m binat mfcr m M ftrnnllt DER TECHNIK I Bezirksvorstand Frankfurt/O.

MH1SS1

Abstract: TESLA mh 7400 MH 7404 mh 7400 tesla cdb 838 tda 7851 L 741PC TDB0124DP tda 4100 TDA 7851 A
Contextual Info: m ö lk ^ o e le l-c te n a n il-c Information Applikation RGW Typenübersicht Vergleich Teil 2: RGW M iM U Z A U l KÉD lnrüÖC=SraO Information Applikation HEFT 50 RGW Typenübersicht + Vergleich Teil 2: RGW wob Halbleiterwerk Frankfurt /oder bt r iab im v«b kombinat mikrootektronik

MSD 7818

Abstract: MN9106 information applikation 7490 N TDA 5700 information applikation mikroelektronik udssr hefte 143KT1 Mikroelektronik Information Applikation K 176 LE, K 561 LN
Contextual Info: In n in ik ü r Q fâ lI Information Applikation RGW Typen­ übersicht + Vergleich TeiM UdSSR JitfÆÊL JUUUUUUL&JJJUL i m i n i ^ r ^ c z l c i c b p o n Information Applikation , 9 H E F T 4 9 * R G W T y p e n ü b e r s i c h t + V e r g l e i c h Teil 1

MM4220DF/MM5220DF

Abstract: mm5221 MM4240 DS8807 MM5017 54S287 MM1402a equivalent transistor bf 175 MM74C920 MM5061
Contextual Info: Edge Index by Product Family NATIONAL This is National's first Memory handbook containing information on MOS and Bipolar Memory Components, Systems, Application Notes and Support Circuits. For detailed information on Interface Circuits and other major product lines, contact a National sales office, representative, or distributor.

74LS189 equivalent

Abstract: 74LS200 AmZ8036 Z8104 74LS300 AM9511 Am2505 27s13 54S244 27LS00
Contextual Info: Advanced Micro Devices Condensed Catalog 1981 Advanced Micro Devices, Inc. Advanced Micro Devices reserves the right to make changes in its products without notice in order to improve design or performance characteristics. The company assumes no responsibility for the use of any circuits described herein.

54S38

Abstract: SN74298 SN74265 54175 NES 1004 naval specification 74L95 Transistor AF 138 07802-1 SN7437 SN54LS195A
Contextual Info: m - G EN ER A L IN F O R M A TIO N INDEXES Numerical • Functional/Selection Guide O R D E R IN G INSTRUCTIO NS A N D M E C H A N IC A L D ATA 1 1 5 4/74 F A M IL Y SSI C IR CU ITS 2 I 54/74 F A M IL Y M S I/LSI C IR C U ITS 3 S E R IE S 29000 S S I C IR C U IT S

74ls314

Abstract: SN75450BN RM741DC 74LS208 MC1711G 74s214 SN75361AP 74LS207 RS 75491 MC1741L
Contextual Info: PRODUCT RANGE PAGE M IC R O P R O C E S S O R S 2-21 M E M O R IE S MOS M IC R O P R O C E S S O R S & S U P P O R T C IR C U IT S 2 2 -2 7 28 2 9 -3 0 DTL TTL L IN E A R IN T E R F A C E C IR C U IT S 5 5 / 7 5 S e rie s C o n tr o l C ir c u its C ro s s -R e fe re n c e G u id e

dm8130

Abstract: 54175 DM74367 KS 2102 7486 ic truth table signetics 2502 ci 8602 gn block diagram ci 8602 gn 74s281 DM74LS76
Contextual Info: 19 7 6 N atio n al S e m ico n d u cto r C o rp . p 1 ? I m • ' % TTL Data Book D EV IC E MIL i 2502 2503 2504 5400 54H00 54L00 54LS00 5401 54H01 54L01 54LS01 5402 54L02 54LS02 5403 54L03 54LS03 5404 54H04 54L04 54LS04 5405 54H05 54L05 54LS05 5406 5407 5408

WIMA TFM

Abstract: Beckman 785-1 mkb3 wima TFM-.1UF-160V bf197 diode zener ph c9v1 2N4286 2N3642 bf197p transistor 2N2359A
Contextual Info: TENTH EDITION ELECTRONIC COMPONENTS CATALOGUE FAIRCHILD FERRANTI WAYCOM comway BECKMAN SPRAGUE ASTRALUX REDPOINT GREENPAR electronics limited MOLEX MARKET STREET BRACKNELL BERKS RG121JU RADIATRON TEL: SALES, BRACKNELL 0344 24765 TELEX:847201 ERG HELLERMANN

DM74367

Abstract: 54175 71ls97 DM74109 DM8160 om541 ci 8602 gn block diagram 5401 DM transistor 74L10 74S136
Contextual Info: N ational Semiconductor Section 1 - 54/74 SSI DEVICES Connection Diagram s • Electrical Tables Section 2 - 54/74 M SI DEVICES Section 3 - National Semiconductor PROPRIETARY DEVICES Section 4 - National Semiconductor ADDITIONAL D EV KES t o NATIONAL Manufactured under one or more of the fo llowing U.S. patents: 3083262, 3189758, 3231797 , 3303356, 3317671, 3323071, 3381071, 3408542, 3421025, 3426423, 3440498, 3518750, 3519897, 3557431, 3560765,