74475 Search Results

Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : 744758318A Hochstrom HF-Induktivität WE-RFH High Current RF-Inductor WE-RFH DATUM / DATE : 2007-11-28 A Mechanische Abmessungen / dimensions:

Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : 744758333A Hochstrom HF-Induktivität WE-RFH High Current RF-Inductor WE-RFH DATUM / DATE : 2007-11-28 A Mechanische Abmessungen / dimensions:

Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : 744758315A Hochstrom HF-Induktivität WE-RFH High Current RF-Inductor WE-RFH DATUM / DATE : 2007-11-28 A Mechanische Abmessungen / dimensions:

Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : 744758327A Hochstrom HF-Induktivität WE-RFH High Current RF-Inductor WE-RFH DATUM / DATE : 2007-11-28 A Mechanische Abmessungen / dimensions:

Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : 744758312A Hochstrom HF-Induktivität WE-RFH High Current RF-Inductor WE-RFH DATUM / DATE : 2007-11-28 A Mechanische Abmessungen / dimensions:

Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : 744758339A Hochstrom HF-Induktivität WE-RFH High Current RF-Inductor WE-RFH DATUM / DATE : 2007-11-28 A Mechanische Abmessungen / dimensions:

Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : 744758347A Hochstrom HF-Induktivität WE-RFH High Current RF-Inductor WE-RFH DATUM / DATE : 2007-11-28 A Mechanische Abmessungen / dimensions:

Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : 744758368A Hochstrom HF-Induktivität WE-RFH High Current RF-Inductor WE-RFH DATUM / DATE : 2007-11-28 A Mechanische Abmessungen / dimensions:

Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : 744758356A Hochstrom HF-Induktivität WE-RFH High Current RF-Inductor WE-RFH DATUM / DATE : 2007-11-28 A Mechanische Abmessungen / dimensions:

Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : 744758410A Hochstrom HF-Induktivität WE-RFH High Current RF-Inductor WE-RFH DATUM / DATE : 2007-11-28 A Mechanische Abmessungen / dimensions:

Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : 744758382A Hochstrom HF-Induktivität WE-RFH High Current RF-Inductor WE-RFH DATUM / DATE : 2007-11-28 A Mechanische Abmessungen / dimensions:

Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : 744758322A Hochstrom HF-Induktivität WE-RFH High Current RF-Inductor WE-RFH DATUM / DATE : 2007-11-28 A Mechanische Abmessungen / dimensions:

Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Inductance 7.96 MHz Q-factor 7.96 MHz DC Resistance @ 20°C RDC 2.60 Rated current ∆T = 15 K IR fres Self resonant frequency Value Unit L 8.2 µH Q 20

Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Inductance 2.52 MHz Q-factor 2.52 MHz DC Resistance @ 20°C RDC 2.80 Rated current ∆T = 15 K IR fres Self resonant frequency Value Unit L 10 µH Q 15

M68040

Abstract: MC68EC040 MC68LC040 BB 36 931 937 motorola
Contextual Info: INDEX -A - Bus Cycle, 7-29, 7-35, 9-20 BSDL Description, 6-15 Access Control Unit, 1-2, B-4, B-5 Buffer Selection, 7-69 Access Control Unit Register, B-5; Burst Mode Operations, 4-3, 4-11, 5-9 Field Definitions, B -6-B -7 Burst Bus Cycles, s e e Bus Cycles

Contextual Info: Trimming Potentiometers Carbon and Cermet Carbon, 10 mm Cermet, 10 mm ♦ Series ECP10 O CP10 E M P 10 Overall dimensions 10x12 mm 10x12 mm 10x12 mm Technology metal-glaze resistive layer on a ceramic base carbon resistive layer on a phenolic paper base 1

CQ 4.000 crystal oscillator 4Mhz

Abstract: ztb 421 CQ 13.560 ctx128 ats 4.096 18pf CTX128 diode SE271 ZTB455E CSX750PCC 7213 time base generator ic
Contextual Info: Section Reference Index Connectors, Cable Assemblies, IC Sockets. . . . . . . . . . . . . . . . 16-201 Semiconductors, ICs, Transistors, Diodes, Rectifiers . . . 202-402 INCLUDES SMT INCLUDES SMT A B S C 6E 3. I Crystals, Oscillators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 403-423

Contextual Info: New Product SiB911DK Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.295 at VGS = - 4.5 V - 2.6 0.420 at VGS = - 2.5 V - 2.2 0.560 at VGS = - 1.8 V - 1.9 Qg (Typ.) 1.6 nC • Halogen-free • TrenchFET Power MOSFET

48C24

Abstract: f4737 bfe 9ca 3C44C 34h737 S42B BA3442
Contextual Info: 123456 12345267621842897A5BC9DDB5 7EF37B3B57D91DB57217FDA627CB135B67 7898ABCDD9A EDFD8A 7D9F D89D 123 4 56789A 4 BC4 D3ECFC4E3454 6E3 4 7F3CCF4 3BE 4 FEC34 33FEBC 4 123 4 5678 9A4BC43CBE34F4F34 E3 4 C3324

7447

Abstract: CPH5818 MCH3339 SBS007M
Contextual Info: Ordering number : ENN7447 CPH5818 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5818 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3339 and a Schottky Barrier Diode (SBS007M) 2171

Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Inductance 7.96 MHz Q-factor 7.96 MHz DC Resistance @ 20°C RDC 2.00 Rated current ∆T = 15 K IR fres Self resonant frequency Value Unit L 6.8 µH Q 20

407257-1

Abstract: 164589 028-7428 03601-30 74676 0674068 141898 1606445 74127 60034
Contextual Info: Narrow Wide Plots Back to RFM Website S-Parameter Narrow "RF1172C, 7/10/02 " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " 427.411200 -.1873169, -.1873474, -.1869202, -.1868591,

Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Inductance 7.96 MHz Q-factor 7.96 MHz DC Resistance @ 20°C RDC 1.80 Rated current ∆T = 15 K IR fres Self resonant frequency Value Unit L 5.6 µH Q 20

Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit µH Inductance 25 MHz L 1.0 Q-factor 100 MHz Q 33 DC Resistance @ 20°C RDC 1.70 Rated current ∆T = 15 K IR fres Self resonant frequency Tol.