74250 Search Results

transistor b 595

Abstract: ATC100A PH1819-45
Contextual Info: = z-P= Coming Attractions an AMP company Wireless Bipolar Power Transistor, 45W 1805 - 1880 MHz NPN Silicon Microwave Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metalization System

J37 transistor

Abstract: transistor j8 transistor j37 J370 capacitor J37 PH3134-9L transistor j145
Contextual Info: = - an AMP company Radar Pulsed Power Transistor, SW, 300~s Pulse, 10% Duty Pti3134-9L 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency InterdigitatedGeometry Diffused Emitter Ballasting Resistors

Genlock

Abstract: GS4910B 1kv hd CLOCK GENERATOR 10HZ GS4911B/GS4910B 244M 267M GS4911B smpte 274m VG901101A
Contextual Info: GS4911B/GS4910B HD/SD/Graphics Clock and Timing Generator with GENLOCK Key Features Description Video Clock Synthesis • • • • • • Generates any video or graphics clock up to 165MHz Pre-programmed for 8 video and 13 graphics clocks Accuracy of free-running clock frequency limited only by

Sony IMX 183

Abstract: Sony sony cmos sensor imx 178 Sony imx 214 Sony ImX 252 sony cmos sensor imx 226 Sony IMX 219 CMOS Sony "IMX 219" CMOS sony IMX 322 cmos sony cmos sensor imx 185
Contextual Info: i.MX 6Solo/6DualLite Applications Processor Reference Manual Document Number: IMX6SDLRM Rev. 1, 04/2013 i.MX 6Solo/6DualLite Applications Processor Reference Manual, Rev. 1, 04/2013 2 Freescale Semiconductor, Inc. Contents Section number Title Page Chapter 1

74250

Abstract: Si7102DN-T1-E3 Si7102DN-T1-GE3
Contextual Info: Si7102DN Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.0038 at VGS = 4.5 V 35 0.0047 at VGS = 2.5 V 35 VDS (V) 12 Qg (Typ.) 41 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

74590

Abstract: 74285 pico electronics transformers 74115 74240 74220 74210 74035 74515 74565
Contextual Info: Pulse Transformers - Plug-In Specifications Units manufactured to MIL-PRF-21038. z DIELECTRIC STRENGTH: All units tested at 500 V RMS. z INSULATION RESISTANCE: Greater than 10,000 Megohms at 700 V DC. z THERMAL SHOCK: 25 Cycles, Method 107, MIL-STD-202, Test Condition -55

Contextual Info: GS4911B/GS4910B HD/SD/Graphics Clock and Timing Generator with GENLOCK GS4911B/GS4910B Data Sheet Key Features Description Video Clock Synthesis The GS4911B is a highly flexible, digitally controlled clock synthesis circuit and timing generator with genlock capability. It can be used to generate video and

AD9389/PCB

Abstract: FS-1000 AD9889 ITU709 AN810 R0x48 d05724 AD9389 AN-795 AN-810
Contextual Info: 800 MHz High Performance HDMI /DVI Transmitter AD9389 HDMI/DVI transmitter compatible with HDMI 1.1 and HDCP 1.1 Single 1.8 V power supply Video/audio inputs are 3.3 V tolerant Supports HDCP 1.1 with encrypted internal HDCP key storage 80-lead LQFP Digital video

video genlock pll 3.3

Abstract: GS4910BCNE3 GS4910B hd-SDI deserializer LVDS Video Genlock PLL synthesizer 144mhz 5501 7 segment 6AH-15 digital audio switcher Genlock
Contextual Info: GS4911B/GS4910B HD/SD/Graphics Clock and Timing Generator with GENLOCK GS4911B/GS4910B Data Sheet Key Features Description Video Clock Synthesis The GS4911B is a highly flexible, digitally controlled clock synthesis circuit and timing generator with genlock capability. It can be used to generate video and

transistor c 933

Abstract: transistor j5 Transistor 933 13MM transistor c 144 572 transistor 933 TRANSISTOR 30 w RF POWER TRANSISTOR NPN
Contextual Info: an AMP comDanv Wireless Power Transistor, 33W 1805 - 1880 MHz PHl819-33 v2.01 I- Features l l l l l NPN Silicon Microwave Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Matching Diffksed Emitter Ballasting Gold Metallization System

NPN TRANSISTOR Z4

Abstract: b 595 transistor transistor z4 n transistor ZY PH3134-65M 572i transistor b 595
Contextual Info: ,-=r=-= -= ZY f .- = r = anAMPcompany * Radar Pulsed Power Transistor, 65W, 1OOp Pulse, 10% Duty PH3134-65M 3.1 - 3.4 GHz Features l l l l l l l l .650 16.51 - NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation

transistor 9232

Contextual Info: A ti« O M w a n A M P com pany Radar Pulsed Power Transistor, 10W, 100ns Pulse, 10% Duty 3.1-3.4 GHZ PH3134-10M Features • • • • • • • • b/y :14 4B> NPN Silicon M icrow ave Pow er T ran sisto r C o m m o n Base C onfig u ratio n B ro a d b an d Class C O p e ra tio n

Contextual Info: Radar Pulsed Power Transistor, 65W, 100|is Puise, 10% Duty 3.1-3.4 GHz PH3134-65M Features • • • • • • • • N1JN Silicon M icrow ave P ow er T ran sisto r C o m m o n Base C onfig u ratio n B ro a d b an d Class C O p e ratio n High Efficiency In terd ig ita te d G eo m etry

b 595 transistor

Abstract: 73c50 PH2323-1 el841 transistor Common Base configuration 2S425 EL84 transistor b 595
Contextual Info: 3 .- an AMP comDanv CW Power Transistor, 2.3 GHz 1W PH2323-1 v2.00 Features l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System

NF-C-93-550

Abstract: RG316DT MIL-C-17 NFC93550 1167B Outillages TRSP 127 RG-225 cable nokia jack NOKIA Mobile
Contextual Info: CONNECTEURS CONNECTORS BNC axoCOAX  BNC Sommaire Summary Spécifications Specifications Fiches mâles Male plugs p. 2 to 3  A SERTIR Droites & coudées Droites isolées  A SOUDER Droites CRIMP Straight and right angle  A SERTIR Droites CRIMP  A SERTIR

Contextual Info: New Product Si7102DN Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)e 0.0038 at VGS = 4.5 V 35 0.0047 at VGS = 2.5 V 35 VDS (V) 12 Qg (Typ) 41 nC • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mm

Contextual Info: Si7102DN Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.0038 at VGS = 4.5 V 35 0.0047 at VGS = 2.5 V 35 VDS (V) 12 Qg (Typ.) 41 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Contextual Info: GS4911B/GS4910B HD/SD/Graphics Clock and Timing Generator with GENLOCK GS4911B/GS4910B Preliminary Data Sheet Key Features Description Video Clock Synthesis The GS4911B is a highly flexible, digitally controlled clock synthesis circuit and timing generator with

AD9889

Abstract: AD9889 EDID HDMI receiver sense hdmi SDI AD9880 AD9889KSTZ-80 AN-795 AN-810 BT656 IEC60958
Contextual Info: High Performance HDMI /DVI Transmitter AD9889 FEATURES HDMI/DVI transmitter compatible with HDMI 1.1 and HDCP 1.1 Single 1.8 V power supply Video/audio inputs are 3.3 V tolerant 80-lead, Pb-free LQFP Digital video 80 MHz operation supports all video formats from 480i to

GS4910B

Abstract: 5501 7 segment BT.709 Genlock 244M 267M GS4911B smpte 274m
Contextual Info: GS4911B/GS4910B HD/SD/Graphics Clock and Timing Generator with GENLOCK GS4911B/GS4910B Data Sheet Key Features Description Video Clock Synthesis The GS4911B is a highly flexible, digitally controlled clock synthesis circuit and timing generator with genlock capability. It can be used to generate video and

Contextual Info: / M ik o m an A M P com pany Radar Pulsed Power Transistor, 11W, 1^s Pulse, 10% Duty 3.1-3.4 GHz PH3134-11S V2 00 9^0 c?U 8J> Features ,5/J • • • • • • • • NPN Silicon M icrow ave Pow er T ran sisto r C o m m o n Base C on fig u ratio n B ro a d b an d Class C O p e ra tio n

pin diagram of 7425

Abstract: 74250 5425FM 7425FC 7425PC
Contextual Info: 25 CO NNECTIO N DIAGRAM PINOUT A /• I 54/7425 DUAL 4-IN PU T NOR GATE With Strobe ORDERING CODE: See Section 9 PIN PKGS OUT COMM ERCIAL GRADE MILITARY GRADE V cc = +5.0 V ±5%. T a = 0°C to +70° C Vcc = + 5 .0 V ±10%, T a = -55° C to +125° C PKG OUT

wacom

Abstract: FI55 PH3134-55L lcfb RF NPN POWER TRANSISTOR 2.5 GHZ 340 a transistor
Contextual Info: an AMP company Radar Pulsed Power Transistor, SW, 300~s Pulse, 10% Duty 3.1 - 3.4 GHz PH3134-55L Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Effkiency Interdigitated Geometty Diffused Emitter Ballasting Resistors

NPN microwave power transistor 865

Abstract: omni spectra sma ATC100A PH2323-1 Noryl 1075
Contextual Info: PH2323-1 CW Power Transistor 1W, 2.3 GHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • • • • • • • NPN silicon microwave power transistor Common base configuration Class C operation Interdigitated geometry Diffused emitter ballasting resistors