742 792 07 Search Results

wurth 742 792 15

Abstract: 742 wurth COMPOSANT SMD digital elektronik
Contextual Info: Würth Elektronik GmbH & Co. KG Verbindungstechnik Riedenstraße 16 D-74635 Kupferzell Telefon: +49 (07944) 91 93-0 Telefax: (+49) (07944) 91 93-51 WURTH ELEKTRON KM VEAU TÉ Verbindungstechnik EMV-Komponenten SMD Ferrite Arrays / Réseau de ferrites CMS WE-FA

wurth 742 792 02

Abstract: wurth* 742 700 5 wurth 742 792 04 wurth 742 792 15 742 792 113 wurth 742 793 742 792 07 wurth 742 792 622 742 792 71 "742 793 1"
Contextual Info: W ü rth E lektronik G m bH & C o. KG V e r b in d u n g s te c h n ik R iedenstraße 16 D 74635 Kupferzell Telefon: +49 (0 7 9 4 4 ) 91 9 3-0 WURTH ELEKTRONIK Telefax: (+49) (0 7 9 4 4 ) 91 93-51 à NOUVEAUTE 0402 SMD-Ferrites / Ferrites CMS BL ""E n □ >

wurth* 742 700 5

Abstract: wurth 742 792 02
Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : 74479787147 SMD-Powerinduktivität WE-PMI SMD-power inductance WE-PMI DATUM / DATE : 2008-01-02 A Mechanische Abmessungen / dimensions:

wurth 742 792 02

Abstract: wurth 742 792 15 74479787210
Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : 74479787210 SMD-Powerinduktivität WE-PMI SMD-power inductance WE-PMI DATUM / DATE : 2008-01-02 A Mechanische Abmessungen / dimensions:

Contextual Info: FLK017XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 8.0dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK017XP chip is a power GaAs FET that is designed for

Contextual Info: FLK017XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 8.0dB(Typ.) High PAE: hadd = 26%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK017XP chip is a power GaAs FET that is designed for

Contextual Info: FLK017XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 8.0dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK017XP chip is a power GaAs FET that is designed for

G7XX

Abstract: HDB3 E2 txc-21037 G-745 G753 G7421
Contextual Info: E2/E3F Device 8-, 34-Mbit/s Framer TXC-03701B DATA SHEET FEATURES DESCRIPTION • Framer for ITU-TSS Recommendations: - G.742 8448 kbit/s - G.745 (8448 kbit/s) - G.751 (34368 kbit/s) - G.753 (34368 kbit/s) The E2/E3 Framer (E2/E3F) is a CMOS VLSI device

108 046f

Abstract: 03e1 046F 044f 03C24 b 0334 046b
Contextual Info:
     

      
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03E1

Abstract: 00CF ISD33000 b0334 04D5
Contextual Info:

 
      
 
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Kathrein 739 160

Abstract: Kathrein Antennas 840 21210 Kathrein CSA AWM 1 A Kathrein gsm ANTENNA Din 41253
Contextual Info: ISO 9001 Quality and ISO 14001 Environmental Management Kathrein-Scala is an ISO 9001 and ISO 14001 certified company and is in voluntary compliance with EU Directive 2002-95-EC for Reduction of Hazardous Substances RoHS . Order Information Address: Kathrein Inc., Scala Division

sl2 357

Contextual Info: D A TA S H EE T GaAs MES FET NE72118 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 5.5 dB TYP. @ f = 12 GHz • Gate Length: Lg = 0.8 /urn recessed gate • Gate W idth: Wg = 330 /urn • 4 pins super mini mold

mc146818ap

Abstract: MC146818ACP MC146818P SC414259CFT16 SC370628DW MC146818CP sc4142 sc4144 XC68341FT16 MC146818AFN
Contextual Info: BR1515/D REV 3 SEMICONDUCTOR DEVICES NOT READY FOR YEAR 2000 March, 1999 Year 2000 Readiness Disclosure IMPORTANT YEAR 2000 NOTICE: You have requested technical information on a product s that is NOT READY for Year 2000 and WILL NOT be fixed. The product(s) you requested has been discontinued. Technical information on the product has been moved to the Year 2000 web site at http://sps.motorola.com.

transistor 1211

Abstract: transistor su 312 transistor zo 109
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the

LEMO FFA 1S

Abstract: ffa 2e 675 cta LEMO fvb.00 LEMO EGG.2B LEMO LEMO FGG.1B LEMO FGG.2B flat gasket viton Amphenol HV STYCAST 2850
Contextual Info: LEMO’s B and S Series Connectors B Series - Mechanical Keying S Series - Hermaphroditic Keying 2003 Expect Success. Spec LEMO. A Global Leader Since its beginning in Switzerland in 1946, LEMO® has evolved into a worldwide leader in the design and manufacture of circular connectors, with products sold

LEMO fvb.00

Abstract: LEMO FGG.1B LEMO LEMO FGG.4B LEMO 2B.319 lemo HEG 0K LEMO EGG.2B LEMO connector fvb socket LEMO connector esg LEMO FGG.0B
Contextual Info: LEMO’s B and S Series Connectors B Series - Mechanical Keying S Series - Hermaphroditic Keying 2003 Expect Success. Spec LEMO. A Global Leader Since its beginning in Switzerland in 1946, LEMO® has evolved into a worldwide leader in the design and manufacture of circular connectors, with products sold

2SC5005

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the

sem 2105 16 pin

Abstract: sem 2105
Contextual Info: DATA SH E E T GaAs MES FET NE72118 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES High Power Gain: Gs = 5.5 dB TYP. @ f = 12 GHz Gate Length: Lg = 0.8 jum recessed gate Gate Width: Wg = 330 fjm 4 pins super mini mold Tape & reel packaging only available

GU 2-125

Abstract: Elec-Trol R4561-2 ELECTROL R2677-2
Contextual Info: G E Pow er Electrolytic Capacitors 105 ° C Product 50 to 250 WVDC 250 to 150,000 uF — E X T E M M rT m P E fW W M • t im Broad Capacitance Range • Increased Volumetric Efficiency • Low E S R • Standard Ratings â Genera! Specifications r C A P A C ITA N C E RANGE -

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range

d11 1117

Abstract: 8C722 Z111
Contextual Info: 11111 1 234567879A4BC 123445678 1 234567375189AB8CCDE F1B118B1BA 1  !D"# 1 $ #%8D%&'1 •1 &5'7%95141 54B1 *!3*541A+67,A79'1 ·1 -9+.145/.59,B011 11.9A859A614B'A60112311F1231 11#55459,51-9+.0112311 1231

2SC5006

Abstract: 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range

ci 4047B

Abstract: IC 4047 pin diagram internal circuit diagram for ic 4047 IC 4047 IC 4047 BE pin diagram ic 4047B RC Oscillator circuit diagram with 4047 IC PIN CONNECTIONS OF IC 4047 IC 4047 BE IC dc 4047
Contextual Info: S G S-THOfISON 07C D I 7TSC]237 00147A1 □ I c o s /m u s r . i v INTEGRATED CIRCUIT 1 fJCK h c c / h c f 4 0 « b . likLIi_ J . *»1C 08 794 T :S ~ / - / Ÿ LOW-POWER MONOSTABLE/ASTABLE M U LTIV IB R A TO R • • • LO W P O W ER C O N S U M P T IO N : S P E C IA L C O S /M O S O S C IL L A T O R C O N F IG U R A T IO N

54129

Abstract: 8C722
Contextual Info: 11111 1 234567879A4BC 123445678 1 234567375189AB8CCDE F1B118B1BA 1  !D"# 1 $ #%8D%&'1 •1 &'5 ! '541(8A665(134%4A88A*6513&&11 ·1 +54B16'1,7541A913-A(51.7(51 ·1 /0)014510592B10)131 11456171+1)54A791