NTC 220-11
Abstract: PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide
Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,
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transisto25-735.
NTC 220-11
PHILIPS TRANSMITTING BIPOLAR
Philips Semiconductors Small-signal Transistors Selection guide
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BLW33
Abstract: No abstract text available
Text: i, Una, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television
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BLW33
OT122A
BLW33
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PBLS4005D
Abstract: No abstract text available
Text: PBLS4005D 40 V PNP BISS loadswitch Rev. 02 — 19 July 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)
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PBLS4005D
OT457
SC-74)
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2SC 8550
Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4
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3SK309
3SK317
3SK318
BB101C
BB102C
BB301C
BB302C
BB304C
BB305C
BB501C
2SC 8550
6020v4
6030v4
HITACHI 08122B
2SC 8050
HITACHI 08123B
transistor h945
H945
TRANSISTOR c 6030v4
2sk3545
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HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
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nielinger
Abstract: Fleischmann chebyshev mtt siemens heft MAR 735 mosfet pp Siemens MTT philips 1968 MOSFET dynamic
Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 6 6.1 References 4. Hilberg, W., ‘Einige grundsätzliche Betrachtungen zu Breitband-Übertragern’, NTZ, 1966, Heft 9, pp. 527-538. REFERENCES References in the main text
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SMD310
Abstract: No abstract text available
Text: MSD602-RT1 Preferred Device NPN General Purpose Amplifier Transistor Surface Mount http://onsemi.com MAXIMUM RATINGS TA = 25°C Symbol Value Unit Collector−Base Voltage V(BR)CBO 60 Vdc Collector−Emitter Voltage V(BR)CEO 50 Vdc Emitter−Base Voltage
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MSD602-RT1
SC-59
SMD310
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c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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1853IMPATT
c5088 transistor
transistor C3207
TLO84CN
sec c5088
IN5355B
D2817A
C3207 transistor
toshiba f630
TLO81CP
MC74HC533N
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IPB04N03LB
Abstract: JESD22 A10080
Text: IPB04N03LB OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 3.5 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)
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IPB04N03LB
PG-TO263-3
PG-TO220-3-1
P-TO263-3
04N03LB
IPB04N03LB
JESD22
A10080
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Untitled
Abstract: No abstract text available
Text: IPP04N03LB G OptiMOS 2 Power-Transistor Product Summary Features V DS 30 V • Ideal for high-frequency dc/dc converters R DS on ,max 3.8 m: ID 80 A • Qualified according to JEDEC1) for target application • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)
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IPP04N03LB
PG-TO220-3
04N03LB
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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transistor buz71a
Abstract: BUZ71 BUZ71A T0220AB
Text: PowerMOS transistor N A M ER BUZ71A P H IL IP S /D IS C R E T E OLE D • ^ 5 3 ^ 3 1 O G I M MCH 5 T-97-II May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUZ71A
bbS3T31
T-97-II
T-39-11
transistor buz71a
BUZ71
BUZ71A
T0220AB
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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buz45
Abstract: No abstract text available
Text: PowerMOS transistor_BUZ45 N AMER PHILIPS/DISCRETE QbE J> M tbS3T31 0014b47 T • _ July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in
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BUZ45
tbS3T31
0014b47
BUZ45_
bb53T31
0014bSl
T-39-13
bbS3T31
buz45
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Untitled
Abstract: No abstract text available
Text: SIEMENS NPN Silicon High-Voltage Transistor BFN 22 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary type: BFN 23 PNP
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Q62702-F1024
OT-23
EHP00610
flE35b05
EHP00612
235b05
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K 3911
Abstract: transistor k 3911 transistor 86 y 87 BUZ11A T0220AB PAD35
Text: PowerMOS transistor_ N AMER PHILIPS/DISCRETE GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , m otor control, welding, DC/DC and DC/AC converters,
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BUZ11A
001431S
T-39-11
T0220AB;
7Z21186
K 3911
transistor k 3911
transistor 86 y 87
BUZ11A
T0220AB
PAD35
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2SK44
Abstract: 2SK4 024N 2sk447 Field Effect Transistor Silicon N Channel MOS vdss 600
Text: TOSHIBA {DISCRETE /OPT O} t 9097250 TOSHIBA CDISCRETE/OPTO í d e | tottesd 99D 16683 GGittaa □ D T 13 ? -/•3 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 2S K 44 7 SILICON N CHANNEL MOS TYPE < 7T - M O S ) TECHNICAL DATA INDUSTRIAL APPLICATIONS Unit in ran
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710a
Abstract: IRFMG40 IRFMG40D IRFMG40U
Text: Data Sheet No. PD-9.710A INTERNATIONAL RECTIFIER llO R l REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMG4Q N-CHANNEL Product Summary 1000 Volt, 3.5 Ohm HEXFET The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFMG40
IRFMG40D
IRFMG40U
O-254
MIL-S-19500
710a
IRFMG40
IRFMG40U
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KYS 30 40 diode
Abstract: 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100
Text: MbE 4bôb22b D I X Y S OGQQÔTM T H IX Y CORP □IXYS Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features Guaranteed Short Circuit Capability SCSOA Low Input Capacitances Optimized for 60Hz to 30kHz Switching
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30kHz
1560A
4bflb55b
Q000S1S
IXSH20N60
IXSM20N60
KYS 30 40 diode
40n60 transistor
mos 30N60
2355Z
wiom DC
IXYS 30N60
of ic 3915
1XYS
30N60T
35N100
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • /f = 8 GHz F = 1.2 dB at 900 MHz RHs Q62702-F1316 1= B li O BFR 183 CO ESP: Electrostatic discharge sensitive device, observe handling precaution!
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Q62702-F1316
OT-23
BFR183
900MHz
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO} Tí D eT I t D ^ S G 990 16850 9097250 TOSHIBA DISCRETE/OPTO ^/oihlha üDlbñSG 3 D 1-39-13 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 5 4 3 SILICON N CHANNEL MOS TYPE TECHNICAL DATA (ff-MOSIT) INDUSTRIAL APPLICATIONS Unit in mm
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500nA
250uA
250uA
00A/us
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Untitled
Abstract: No abstract text available
Text: • 7^5^537 O O g ^ f l T ■ _ SGS-TTiOMSON 1^ 10 g^@[l[L[i ir^@[i0(g i_ B U Z 6 0 N - CHANNEL ENHANCEMENT MODE _POWER MOS TRANSISTOR S G S-THOMSON 3GE J> TYPE V DSS f*DS(on b BUZ60 400 V 1.0 fl
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BUZ60
7J51237
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