7400 DATABOOK Search Results

lm294oct

Abstract: d71054c D71055C lm294oct-12 74c928 7486 XOR GATE interfacing ADC 0808 with 8086 microprocessor 555 7490 7447 7 segment LED display Motorola 74LS76 NEC D71055C
Contextual Info: Integrated Circuits 74LS Series Featuring better performance than standard 7400 series devices, the 74LS series also uses about 1/5th the power. Part# Pins Description 74LS00 74LS01 74LS02 74LS03 74LS04 74LS05 74LS06 74LS07 74LS08 74LS09 74LS10 74LS11 74LS12

7400 databook

Abstract: 7400 TTL logitech TTL LS 7400
Contextual Info: TTL schematic designs processed and imple­ mented in EPLDs by Altera. Two programmed EPLDs returned to you. PLSTART coupon good for processing two designs. Runs on IBM XT, AT and compatible personal computers. Graphical entry of logic schematics: — Design schematics using TTL MacroFunctions

IC TTL 7400 diagram and truth table

Abstract: IC 7400 pin diagram data sheet IC 7400 IC TTL 7400 TTL 7400 IC 7400 truth table IC 7400 SERIES ALL DATA IC 7400 diagram and truth table data sheet 7400 IC IC 7400 datasheet
Contextual Info: CMOS PLD Using Programmable Logic Devices Introduction PLD Applications This application note covers three areas: • • Where and why do I use Programmable Logic Devices PLDs ? • How do I use PLDs? • Software and hardware support for Atmel PLDs. •

IC TTL 7400 schematic

Abstract: TTL counters 7400 series IC TTL 7400 IC 7400 truth table cmos logic 7400 series AT22V10 P22V10 IC chip 7400 ttl databook
Contextual Info: CMOS PLD Using Programmable Logic Devices Introduction PLD Applications This application note covers three areas: • Where and why do I use Programmable Logic Devices PLDs ? • How do I use PLDs? • Software and hardware support for Atmel PLDs. • Where Do I Use PLDs?

Using Programmable Logic Devices

Abstract: IC TTL 7400 diagram and truth table IC TTL 7400 CMOS PLD Programming manual TTL counters 7400 series IC 7400 SERIES ALL DATA IC chip 7400 datasheet ic 7400 ttl internal diagram of 7400 IC P22V10
Contextual Info: Using Programmable Logic Devices Introduction PLD Applications This application note covers three areas: • Where and why do I use Programmable Logic Devices PLDs ? • • • • • • • • • • • How do I use PLDs? • Software and hardware support for

Contextual Info: FLM7177-4D lnteruallx Matched Power GaAs F E l s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage VGS -5 V 25 w °c °c Total Power Dissipation Pt Tc = 25°C Storage Temperature

7177-4C

Contextual Info: FLM7177-4C Internally M atch ed Power GaAs l ETs ABSOLUTE MAXIMUM RATING Am bient Tem perature Ta=25°C Item Symbol Condition Rating Unit Draln-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 25 w Total Power Dissipation Pt Tc = 25°C Storage Temperature

Contextual Info: FLM7J77-8C Internally Matched Power ¡aAs FETs ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C Symbol Item Condition Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage vgs -5 V 42.8 w Total Power Dissipation Pt Tc = 25°C Storage Temperature

Contextual Info: FLM6472-8C Internally Matched Power GaAs F El's ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Symbol Item Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 42.8 w -65 t o +175 °c °c Total Power Dissipation Channel Temperature

Contextual Info: FLM6472-4C Internally Ma tch ed Power G a As FETs ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Symbol Item Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 25 w Total Power Dissipation Pt Tc = 25°C Storage Temperature

Contextual Info: FLM6472-35DA Internally Matched Power GaAs l ETs ABSOLUTE MAXIMUM RATING Am bient Tem perature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 115.4 w Total Power Dissipation pt Tc = 25°C Storage Temperature

OZ532

Contextual Info: FLM6472-6I Internally Matched Power ¡aAs FETs ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Condition Symbol Kem Rating Unit Drain-Source Voltage vds 15 V Gate-Source Voltage vgs -5 V 31.2 w Total Power Dissipation Tc = 25°C pt Storage Temperature

6472-4D

Contextual Info: FLM6472-4D Internally Matched Power GaAs FETs ABSOLUTE MAXIMUM RATING Am bient Tem perature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 25 w Total Power Dissipation Tc = 25°C Pt Storage Temperature

Contextual Info: FLM6472-18DA Internally Matched Power GaAs b'ETs ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage VGS -5 V 83.3 w °c °c Total Power Dissipation Pt Tc = 25°C Storage Temperature

FLM7177-8C

Contextual Info: FLM7177-8C FUJITSU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 39dBm Typ. High Gain: G ^ b = 7.0dB (Typ.) High PAE: riadd = 29% (Typ.) Broad Band: 7.1 ~ 7.7GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package

Contextual Info: F L M 6472-HD Internally Matched Power GaAs ¡ E l s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 42.8 w °c °c Total Power Dissipation Pt Tc = 25°C Storage Temperature

Contextual Info: F, , FLM6472-4C J Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 36dBm Typ. High Gain: G ^ b = 8.0dB (Typ.) High PAE: riadd = 30% (Typ.) Broad Band: 6.4 ~7.2GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package

Contextual Info: FLM7177-IHDA Internally Matched Power G a As FETs ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Symbol Item Condition Rating Unit Draln-Souree Voltage VDS 15 V Gate-Source Voltage VGS -5 V 83.3 w Total Power Dissipation Tc = 25°C pt Storage Temperature

SCL 1058

Abstract: 6472-12DA
Contextual Info: F L M 6 4 72 -I 2DA Internally Matched Power GaAs l-'ETs ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Condition Symbol Rating Unit Drain-Source Voltage vds 15 V Gate-Source Voltage vgs -5 V 57.6 w °c °c Total Power Dissipation Tc = 25°C pt

Contextual Info: Rr IUJlîrT Q i 11jU FLM6472-8C Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 39dBm (Typ. High Gain: = 7.0dB (Typ.) High PAE: riadd = 29% (Typ.) Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package

GaAs FETs

Contextual Info: FLM7177-12DA Internally Matched Power iaAs F E l s ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage vgs -5 V 57.6 w Total Power Dissipation Tc = 25°C pt Storage Temperature

Contextual Info: FLM6472-8D Internally Matched Power GaAs FETs RI lîrrQi r UJ11jU FEATURES • • • • • • • High Output Power: P ^ b = 39dBm (Typ. High Gain: = 7.0dB (Typ.) High PAE: riadd = 29% (Typ.) Low IM3 = -45dBc@Po = 28dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q

FLM7177-18DA

Abstract: U/25/20/TN26/15/850/FLM6472-18DA
Contextual Info: FLM7177-18DA Internally Matched Power GaAs FETs r UJ11j U FEATURES • • • • • • • High Output Power: P-idB = 42.5dBm Typ. High Gain: G ^ b = 7.5dB (Typ.) High PAE: riadd = 30% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 7.1 ~ 7.7GHz Impedance Matched Zin/Zout = 50Q

FLM6472-12d

Abstract: FLM6472-12DA
Contextual Info: F| FLM6472-12DA . r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 41 dBm Typ. High Gain: G ^ b = 7.5dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 30dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q