72V1 Search Results

smd JSs 13

Abstract: smd JSs smd JSs 99 VT244A smd JSs 75 DQ2Q-DQ23 3E2 material specification
Contextual Info: SIEM EN S 16M x 72-Bit Dynamic RAM EDO- Module E C C - Module HYM 72V1605GS-50/-60 HYM 72V1615GS-50/-60 168pin buffered DIMM Module Preliminary Inform ation • 168 Pin JEDEC Standard, Buffered 8 Byte Dual In-Line M em ory Module • 1 bank 16 M x 72 organisation

Contextual Info: TOSHIBA TH M 72V1615ATG-4,-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The 72V1615ATG is a 16,777,216-word by 72-bit dynamic RAM module consisting of 18 TC5165405AFT DRAMs on a printed circuit board. This module is optimized for applications which

VT244A

Abstract: 72V1
Contextual Info: 16M x 72-Bit Dynamic RAM Module ECC - Module HYM 72V1600GS-50/-60 HYM 72V1610GS-50/-60 Preliminary Information • 16 777 216 words by 72-bit ECC - mode organization • Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version) 60 ns access time

gm72v16821

Abstract: gm72v16821ct 72V16821CT 16821C gm72v16821c GM72V1682
Contextual Info: G M 72V 16821C T , 048 5, 6 WQRDS x SKT x JBANK LG Semicon Co.,Ltd. SYNCHRONOUS Description Features The GM 72V16821CT is new generation synchronous dynamic RAM, organized 1,048,576 words x Sbit x 2bank. This device offers fully synchronous operation referenced to

IDT72V13081

Abstract: IDT72V14081 IDT72V10081 IDT72V11081 IDT72V12081
Contextual Info: 3.3 VOLT MULTIMEDIA FIFO 256 x 8, 512 x 8, 1,024 x 8, 2,048 x 8, and 4,096 x 8 72V10081, 72V11081 72V12081, 72V13081 72V14081 FEATURES DESCRIPTION • • • • • The 72V10081/72V11081/72V12081/72V13081/72V14081 devices are low-power First-In, First-Out FIFO memories with clocked read and write

72V11165

Abstract: IDT72V11165 IDT72V12165 IDT72V13165 IDT72V14165 IDT72V15165
Contextual Info: 3.3 VOLT MULTIMEDIA FIFO 256 x 16, 512 x 16, 1,024 x 16, 2,048 x 16, and 4,096 x 16 72V11165, 72V12165 72V13165, 72V14165 72V15165 FEATURES DESCRIPTION • • • The 72V11165/72V12165/72V13165/72V14165/72V15165 devices are First-In, First-Out FIFO memories with clocked read and write controls.

Contextual Info: SIEMENS 16M x 72-Bit Dynamic RAM EDO- Module ECC - Module HYM 72V1605GS-50/-60 HYM 72V1615GS-50/-60 168pin buffered DIMM Module Preliminary Information • 168 Pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module • 1 bank 16M x 72 organisation

Contextual Info: SIEMENS 16M X 72-Bit Dynamic RAM Module ECC - Module HYM 72V1600GS-50/-60 HYM 72V1610GS-50/-60 Preliminary Information • 16 777 216 words by 72-bit ECC - mode organization • Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version)

Contextual Info: SIEMENS 16M X 72-Bit Dynamic RAM Module ECC - Module HYM 72V1620GS-50/-60 HYM 72V1630GS-50/-60 Preliminary Information • 168 Pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module • 1 bank 16 M x 72 organisation • Optimized tor ECC applications

GM72V16

Abstract: 72V16421CT
Contextual Info: G M 72V16421C T LG Semîcon Co.,Ltd. ’ 2,097,152 WORDS x 4BIT x 2BANK SYNCHRONOUS DYNAMIC RAM _ Description Features The GM 72V16421CT is new generation synchronous dynamic RAM, organized 2,097,152 words x 4hit x 2bank. This device

PC100-222-620

Abstract: 16830 72v6 SIEMENS PC100-222-620
Contextual Info: SIEM ENS 3.3 V 16M x 64/72-Bit SDRAM Modules 3.3 V 32M x 64/72-Bit SDRAM Modules 3.3 V 64M x 64/72-Bit SDRAM Modules HYS 64/72V16200GU HYS 64/72V32220GU HYS 64/72V32200GU HYS 64/72V64220GU PC100-168 pin unbuffered DIMM Modules Preliminary information • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications

PC100-222-620

Abstract: TSOP54
Contextual Info: S IE M E N S 3.3V 8M x 64/72-Bit 1 BANK SDRAM Module 3.3V 16M x 64/72-Bit 2 BANK SDRAM Module HYS64/72V8200GU- I/-10 HYS64/72V16220GU- I/-10 168 pin unbuffered DIMM Modules Advanced Inform ation • 168 Pin PC1 OO-compatible unbuffered 8 Byte Dual-In-Line SDRAM Modules

PC100-222

Abstract: PC133-333 TSOP54
Contextual Info: HYS 64/72V16300/32220GU SDRAM-Modules 3.3 V 16M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 32M × 64/72-Bit 2 Bank SDRAM Module 168-Pin Unbuffered DIMM Modules • Programmed Latencies: • 168-Pin unbuffered 8-Byte Dual-In-Line SDRAM Modules for PC main memory

D1233

Contextual Info: SIEMENS 3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M x 64/72-Bit 2 Bank SDRAM Module HYS 64/72V8200GU HYS 64/72V16220GU 168 pin unbuffered DIMM Modules • 168 Pin PC100-compatible unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications

Contextual Info: SIEMENS 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module HYM 64V1605GU-50/-60/-70 HYM 64V1645GU-50/-60/-70 HYM 72V1605GU-50/-60/-70 HYM 72V1645GU-50/-60/-70 168pin unbuffered DIMM Module with serial presence detect Preliminary Information

Contextual Info: 3.3V 8M x 64/72-Bit 1 BANK SDRAM Module 3.3V 16M x 64/72-Bit 2 BANK SDRAM Module HYS64/72V8200GU-7.5 HYS64/72V16220GU-7.5 PC133 168 pin unbuffered DIMM Modules • 168 Pin PC133-compatible unbuffered 8 Byte Dual-ln-Line SDRAM Modules for PC main memory applications

Contextual Info: HYS 64/72V16300/32220GU SDRAM-Modules 3.3 V 16M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 32M × 64/72-Bit 2 Bank SDRAM Module 168-Pin Unbuffered DIMM Modules • Programmed Latencies: • 168-Pin unbuffered 8-Byte Dual-In-Line SDRAM Modules for PC main memory

TSOP54

Contextual Info: 3.3V 16M x 64/72-Bit 1 BANK SDRAM Module 3.3V 32M x 64/72-Bit 2 BANK SDRAM Module HYS64/72V16300GU HYS64/72V32220GU 168 pin unbuffered DIMM Modules • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications • PC100 & PC133 versions

Contextual Info: 16M x 72-Bit Dynamic RAM Module ECC - Module HYM 72V1620GS-50/-60 HYM 72V1630GS-50/-60 • 168 Pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module for PC main memory applications • 1 bank 16M x 72 organisation • Optimized for ECC applications

512m pc133 SDRAM DIMM 168

Abstract: 512m pc133 SDRAM DIMM PC100-222 PC133-222 PC133-333
Contextual Info: HYS 64/72V128220GU SDRAM-Modules 3.3 V 128M x 64/72-Bit, 1024 MByte SDRAM Modules 168-pin Unbuffered DIMM Modules Target Datasheet 11.01 • Single + 3.3 V ± 0.3 V power supply • 168-pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory

TSOP-54

Contextual Info: 3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M × 64/72-Bit 2 Bank SDRAM Module HYS 64/72V8200GU HYS 64/72V16220GU 168 pin unbuffered DIMM Modules • 168 Pin PC100-compatible unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications

Contextual Info: SIEMENS 16M x 72-Bit EDO-DRAM Module ECC - Module HYM 72V1625GS-50/-60 HYM 72V1635GS-50/-60 168pin buffered DIMM Module * 168 Pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module for PC main memory applications * 1 bank 16M x 72 organisation * Optimized for ECC applications

Contextual Info: SIEMENS 16M X 72-Bit Dynamic RAM Module ECC - Module HYM 72V1620GS-50/-60 HYM 72V1630GS-50/-60 * 168 Pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module for PC main memory applications * 1 bank 16M x 72 organisation * Optimized for ECC applications

Contextual Info: 72V16M636TU6 16Mx64, 16Mx16 based, PC133 DESCRIPTION The H Y M 72V16M 636TU 6 Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of four 16Mx16bits C M O S Synchronous DRAMs in 400mil 54pin TS O P-II package, one 2Kbit EEPR O M in 8pin TS S O P package on a 168pin gfass-epoxy