71V124S Search Results

PB44

Abstract: PRODUCT CHANGE NOTIC (PCN) 9902-02 topmark 71124 PB32 71016s PJ32 PRODUCT CHANGE NOTIC PCN 9902-02
Contextual Info: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT CHANGE NOTIC PCN PCN #: SR 9902-02 DATE: 2/15/99 Product Affected: 71V016S, 71016S, 71V124S, 71124S in PB44, PB32 and PJ32 packages Manufacturing Location Affected: N/A

71V124SA

Abstract: 71V016SA
Contextual Info: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN 6/1/99 PCN #: SR9905-02 DATE: Product Affected: 71V016S, 71V124S, 71V016SA, 71V124SA Manufacturing Location Affected: NA 8/30/99 Date Effective:

Reliability product sheet

Abstract: 71V124S15Y
Contextual Info: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: SR 9905-03 DATE: Product Affected: 71V124S15Y , 71V124S20Y 6/1/99 MEANS OF DISTINGUISHING CHANGED DEVICES: Product Mark "N" Die Revision on Top Mark

QS001

Abstract: 71V124SA
Contextual Info: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN 11/30/00 PCN #: SR0011-05 DATE: Product Affected: 71V016SA , 71V124SA Manufacturing Location Affected: N/A Date Effective: Contact: Title: Phone #:

71V124SA

Abstract: 71V016SA
Contextual Info: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN 5/3/00 PCN #: SR0003-02 DATE: Product Affected: 71V016S, 71V124S, 71V016SA, 71V124SA Manufacturing Location Affected: Date Effective: 8/3/00 Contact:

Contextual Info: jdt Integrated Device Technology, Inc. 3.3V C M O S STATIC RAM 1 MEG 128K x 8) CENTER POWER & GROUND PINOUT PRELIMINARY 71V124SA FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed C M O S static RAM • JED EC revolutionary pinout (center power/GND) for

71V124SA

Abstract: 71V124 IDT71V124
Contextual Info: IDT71V124 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Revolutionary Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Commercial (0°C to +70°C) and Industrial (–40°C to

s0324

Contextual Info: dt) 3.3V CMOS STATIC RAM 1 MEG 128K x 8-BIT) REVOLUTIONARY PINOUT PRELIMINARY IDT71V124 Integrated De vice Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JED E C revolutionary pinout (center power/G ND) for reduced noise.

CS16LV40963

Abstract: BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D
Contextual Info: www.ashlea.co.uk 01793 783784 Low power SRAM Cross Reference Density Configuration 64K 8Kx8 256K 32Kx8 Lyontek LY6264 LY62L64 LY62256 LY62L256 LY62256 2.7-5.5 1M 128Kx8 64Kx16 LY621024 LY62L1024 LY62L6416 Samsung K6X0808C1D K6X0808T1D K6X1008C2D K6X1008T2D

71V124SA

Abstract: 71V124 IDT71V124
Contextual Info: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Revolutionary Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V124 Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Commercial (0°C to +70°C) and Industrial (–40°C to

Contextual Info: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ 71V124SA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times

IDT71V124

Abstract: IDT71V124SA 71V124SA
Contextual Info: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ 71V124SA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times

SO32-2

Abstract: IDT71V124 IDT71V124SA SO32
Contextual Info: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ 71V124SA/HSA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times

71v124

Abstract: IDT71V124 IDT71V124SA
Contextual Info: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ 71V124SA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times

71256-sa15y

Abstract: 71256sa25tp 71256SA15TP 71016s12y 71256SA15Y 7164S20Y 71256SA20YI 71024S15Y 6116SA15TPG 7164L25YGI
Contextual Info: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA 95138 Phone #: 408 284-8200 PRODUCT DISCONTINUANCE NOTICE (PDN) PDN #: Issue Date: Contact: Title: Phone #: Fax #: E-mail: SR-09-08 Last Buy Deadline for Submission of Order:

SO32-3

Abstract: SO-323 IDT71V124 IDT71V124SA SO32
Contextual Info: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ 71V124SA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times

S0324

Abstract: S0323
Contextual Info: PRELIMINARY IDT71V124 o Integrated De o 3.3V CMOS STATIC RAM 1 MEG 128K x 8-BIT REVOLUTIONARY PINOUT FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JED EC revolutionary pinout (center power/GND) for reduced noise. • Equal access and cycle tim es

Contextual Info: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout 71V124SA Features Description ◆ The IDT71V124 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative

71v416l10

Abstract: 71256SA15Y 71V424S15PHGI8 71V416S12PHGI8 71V416-S12PHG 71256-SA12YG 71V424S15YGI 71256SA12YG 71V35761SA200BG8 71V416L10PHGI8
Contextual Info: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA 95138 Phone #: 408 284-8200 PRODUCT DISCONTINUANCE NOTICE (PDN) PDN #: Issue Date: Contact: Title: Phone #: Fax #: E-mail: SR-10-07 Last Buy Deadline for Submission of Order:

SO32-3

Abstract: IDT71V124 IDT71V124SA SO32-2
Contextual Info: 3.3V CMOS STATIC RAM 1 MEG 128K x 8 CENTER POWER & GROUND PINOUT 71V124SA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise • Equal access and cycle times

IDT71V124

Abstract: IDT71V124SA
Contextual Info: 3.3V CMOS STATIC RAM 1 MEG 128K x 8 CENTER POWER & GROUND PINOUT PRELIMINARY 71V124SA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise

AN106

Abstract: C8051F015 C8051F000 C8051F001 C8051F002 C8051F005 C8051F006 C8051F010 C8051F011 C8051F012
Contextual Info: AN106 I N T E R F A C I N G A N E X T E R N A L SRAM T O T H E C8051F000 Relevant Devices Key Points This application note applies to the following devices: • This reference design assumes a 10 ns SRAM. If the SRAM access time is greater than 45 ns, it may be necessary to add NOP commands to

71V124SA

Abstract: C8051 code a7 74VHC573 C8051F000 IDT71V124 IDT71V124SA10PH
Contextual Info: Application Note 06 Interfacing an External SRAM to the C8051F000 Cygnal C8051 IDT71V124 128Kx8 SRAM A[16:8] ADDRESS BUS A[16:8] 74VHC573 Octal Latch LE ALE AD[7:0] ADDRESS / DATA BUS D Q A[7:0] I/O[7:0] CS CS /WR WE /RD OE Figure 1. External SRAM Block Diagram.

EPM5128LC

Abstract: IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY2148-35C CY7C148-35C CY7C168A-45M CY7C168A-35M+ 5962-8871310RX 5962-8983913RX CY2148-35M CY7C148-35M CY7C169A-35C