71B4ME Search Results

Contextual Info: KM4 I C I 6000B S CMOS DRAM ELECTRONICS 16M x 1 Bit CMOS Dynamic HAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

ic KA7812

Abstract: sheet ka7812 DD35AL KA7810 ka7805 samsung KA7824 SAMSUNG IC. KA7812 Ka7805 diagram KA7810A WV KA7815
Contextual Info: KA78XX ELECTRONICS Industria] 3-TERM INAL 1A POSITIVE VOLTAGE REGULATORS The KA78XX series of three-terminal positive regulators are available in the T 0-220 package and with several fixed output voltages, making them useful in a wide range of applications. Each type employs internal current

C254D

Abstract: cmos dram NCC KMQ
Contextual Info: KM416V254DJ ELECTRONICS CMOS D R A M 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,

SAMSUNG osd application note

Abstract: Hsync Vsync convert pwm circuits ks88 c 3116 KS88C3216 KS88C3208 KS88C321
Contextual Info: KS88C3208 Microcontroller DESCRIPTION The K S 88C 3208 and K S 88C 3216 single-chip C M O S microcontrollers are designed for C T V and related screen display applications. The main peripherals include digital I/O modules, O SD , P W M with data capture, an l2C-bus

IRFP350

Abstract: diode sv 03 ADE 352 TI414 diode sv 03 56 IRFP250 IRFP251 IRFP252 IRFP253 IRFP351
Contextual Info: 7964142 SAMSUNG SEMICONDUCTOR 98D 0 5 2 0 4 INC N-CHANNEL T POWER MOSFETS IRFP350/351/352/353 Tfl Im F % 41 4 E □ 0□ S E □ 4 fi f FEATURES Low Ros<on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Low input capacitance