71329 Search Results

telefunken s 150

Contextual Info: TELEFUNKEN RG 2/4 D1 D uod iod e Vorläufige technische Daten 2. Röhrenfassung 1. A bm e ssu n g en der Röhre ¿ m -. W M . M. 1 : 1,5 25* • M. 1 : t,5 Verbindliche A n g a b e n über die ä uße ren Abmessungen sind de r Heereszeichnung 2 4 b 71329 zu entnehmen.

Contextual Info: 2014 Professional HEX Tools Inch & Metric Complete Hex Program Toll Free: 800 494-6104 2 Wiha Hex Tools Index Wiha Ball End Hex Tools Index DESCRIPTION Page Ball End L-keys & Sets 6 Colored Coded L-keys 5 Ball End L-keys & Sets 7-9 L-keys - Long/Short

Contextual Info: Si3460DV Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.027 at VGS = 4.5 V 6.8 0.032 at VGS = 2.5 V 6.3 0.038 at VGS = 1.8 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si3460DV

Contextual Info: Si3460DV New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.027 @ VGS = 4.5 V 6.8 0.032 @ VGS = 2.5 V 6.3 0.038 @ VGS = 1.8 V 5.7 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G (4) S 2.85 mm N-Channel MOSFET

Contextual Info: Wire-to-Wire Connectors AMP " M " Series Connectors D u rin g th e past ten years m illions of "M " Series products have proven their quality, reliability and e co n o m y in c o m m erc ial and m ilitary a p p licatio n s. "M " Series co n n ecto rs have

Astable Multivibrator

Abstract: CD4007UB CD40106BMS IOH15 VP10 7133-1 transistor
Contextual Info: CD40106BMS CMOS Hex Schmitt Triggers December 1992 Features Pinout • High Voltage Type 20V Rating CD40106BMS TOP VIEW • Schmitt Trigger Action with No External Components • Hysteresis Voltage (Typ.) - 0.9V at VDD = 5V - 2.3V at VDD = 10V - 3.5V at VDD = 15V

gi 9644 diode

Abstract: INTELDX4 write-through
Contextual Info: in te i, MILITARY Intel 486 PROCESSOR FAMILY • Write-Back Enhanced ln t e l D X 4 ™ Processor — Up to 100-MHz Operation -Speed-M ultiplying Technology — 32-Bit Architecture — 16K-Byte On-Chip Write-Back Cache — Integrated Floating-Point Unit

Contextual Info: Si3460DV Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.027 at VGS = 4.5 V 6.8 0.032 at VGS = 2.5 V 6.3 0.038 at VGS = 1.8 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

7133-1 transistor

Abstract: CD40106BMS
Contextual Info: CD40106BMS ÊB «a« CMOS Hex Schmitt Triggers December 1992 Pinout Features CD40106BMS TOP VIEW • High Voltage Type 20V Rating • Schmitt Trigger Action with No External Components • Hysteresis Voltage (Typ.) - 0.9V at VDD = 5V - 2.3V at VDD = 10V

Amidon Tech

Abstract: 76006 CN yazaki AB DALE 9011 8760-A LE67 United Electronics Sumitomo rft
Contextual Info: Global Sales Offices General Semiconductor, Inc. Headquarters European Sales Offices continued 10 Melville Park Road Melville, NY 11747-3113 Tel: 516-847-3000 Fax:516-847-3236 United Kingdom and Ireland General Semiconductor (UK) Ltd. The Grand Union Office Park

Contextual Info: Si3460DV Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.027 at VGS = 4.5 V 6.8 0.032 at VGS = 2.5 V 6.3 0.038 at VGS = 1.8 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

HBT 01 - 04G

Abstract: HBT 00 - 04G INTEL DX4 86-1-S smi LT 9636 INTEL DX2 1184N gi 9214 80286 instruction set 22-31N
Contextual Info: in te i MILITARY Intel486 PROCESSOR FAMILY • lntelDX4™ Processor — Up to 100-MHz Operation — Speed-Multiplying Technology — 32-Bit Architecture — 16K-Byte On-Chip Cache — Integrated Floating-Point Unit — 3.3V Core Operation with 5V Tolerant

Contextual Info: Semiconductor CD40106BMS CMOS Hex Schmitt Triggers December 1992 Pinout Features • High Voltage Type 20V Rating CD40106BMS T O P V IE W • Schmitt Trigger Action with No External Components Kj a - 0.9V at VDD = 5V m =Ä [7 H = B • Noise Immunity Greater than 50%

TSOP-6 .54

Abstract: SI3460DV
Contextual Info: Si3460DV Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.027 @ VGS = 4.5 V 6.8 0.032 @ VGS = 2.5 V 6.3 0.038 @ VGS = 1.8 V 5.7 D TrenchFETr Power MOSFET D 100% Rg Tested TSOP-6 Top View 3 mm 1 6 2 5 (1, 2, 5, 6) D

SI3460DV

Contextual Info: Si3460DV Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.027 at VGS = 4.5 V 6.8 0.032 at VGS = 2.5 V 6.3 0.038 at VGS = 1.8 V 5.7 • TrenchFET Power MOSFET • 100 % Rg Tested RoHS* COMPLIANT TSOP-6

SI3460DV

Contextual Info: Si3460DV Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.027 at VGS = 4.5 V 6.8 0.032 at VGS = 2.5 V 6.3 0.038 at VGS = 1.8 V 5.7 • TrenchFET Power MOSFET • 100 % Rg Tested RoHS* COMPLIANT TSOP-6

CD40106BMS

Abstract: IOH15 VN10 VP10
Contextual Info: CD40106BMS CMOS Hex Schmitt Triggers December 1992 Features Pinout • High Voltage Type 20V Rating CD40106BMS TOP VIEW • Schmitt Trigger Action with No External Components • Hysteresis Voltage (Typ.) - 0.9V at VDD = 5V - 2.3V at VDD = 10V - 3.5V at VDD = 15V

Contextual Info: ITT INTERMETALL Sales Offices „ ¿ X G e n e ra l \J S em ico n d u cto r* General Semiconductor Headquarters: 10 Melville Park Road Melville, NY, 11747-3113 Tel: 516-847-3000 Fax: 516-847-3236 European Sales Offices continued United Kingdom and Ireland:

CD40106BMS

Abstract: IOH15 VN10 VP10 CD40106
Contextual Info: S E M I C O N D U C T O R CD40106BMS CMOS Hex Schmitt Triggers December 1992 Features Pinout • High Voltage Type 20V Rating CD40106BMS TOP VIEW • Schmitt Trigger Action with No External Components • Hysteresis Voltage (Typ.) - 0.9V at VDD = 5V - 2.3V at VDD = 10V

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Si3460DV-T1-E3

Abstract: Si3460DV
Contextual Info: Si3460DV Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.027 at VGS = 4.5 V 6.8 0.032 at VGS = 2.5 V 6.3 0.038 at VGS = 1.8 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si3460DV

Abstract: Si3460DV-T1 71329
Contextual Info: Si3460DV Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.027 @ VGS = 4.5 V 6.8 0.032 @ VGS = 2.5 V 6.3 0.038 @ VGS = 1.8 V 5.7 D TrenchFETr Power MOSFET D 100% Rg Tested TSOP-6 Top View 3 mm 1 6 2 5 (1, 2, 5, 6) D

DIN 72585

Contextual Info: 2014 Professional Quality Bits Complete Bits Program Toll Free: 800 494-6104 2 Terminator Impact Insert & Power Bit Sets High Performance Bits DESCRIPTION Page DESCRIPTION Page Terminator Impact Bits Slotted Dura Insert Bits 27 Phillips Dura Bits 27 4-5