BDX35
Abstract: BDX36 BDX37 transistor bd 711 IEC134 04342M SOT TO-126 mounting 72724 T-33-07
Contextual Info: BDX35 BDX36 BDX37 { _ PHILIPS I N T E R N A T I O N A L SbE ]> • 711GfiSb 0D43418 TSÖ ■ P H I N ^ T -37-07 SILICON PLANAR EPITAXIAL POWER TRANSISTORS N-P-N transistors in T O -126 plastic envelopes intended fo r high current switching applications, e.g.
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bdx35bdx36bdx37711dfisb+8t-3j-07o-126transistor bd 711iec13404342msot to-126 mounting72724t-33-07
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LP2S
Abstract: BUK545-50A 40608G
Contextual Info: - r - 3 Philips Components Data sheet status Preliminary specification date of issue March 1991 Replaces BUK545-50A/B BUK575-60A/B PowerMOS transistor Logic level FET SbE » PH IL IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode
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buk575-60a/bbuk545-50a/b711dfl2bdg44724+4buk575lp2sbuk545-50a40608g
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ICS RS 3197
Abstract: ntsc to rgb SAA7196 philips type 3186 capacitor AD15/117 SAA7116 SAA7116H video data in planar YUV format 1994 AD9129 SAA7110
Contextual Info: P hilips Sem iconductors Desktop Video Products P relim inary specification Digital vid eo to PCI interface FEATURES GENERAL DESCRIPTION • 1024 byte FIFO memory size • Full multistandard video input capability with Philips Video Decoder Chipset • Image resolution up to 768 x 576 (full PAL
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saa7116saa7151bsaa7191bsaa7196+11saa7110saa7186vour-5-25711002bics rs 3197ntsc to rgbphilips type 3186 capacitorad15/117saa7116hvideo data in planar yuv format 1994ad9129
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pw 2222 a
Abstract: PHILIPS 4312 amplifier 55.224 BLF346 VCB223
Contextual Info: Philips Semiconductors Product specification VHF power MOS transistor PHILIPS BLF346 INTERNATIONAL FEATURES SbE ]> • 7HGfl2b 0Cm3flqLf ETT PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures
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blf346ot119vcb223vcb224-+3pw 2222 aphilips 4312 amplifier55.224
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dg432
Contextual Info: BDT60;60A BDT60B;60C SbE T> PHILIPS INTERNATIONAL • 711002b 00432G4 bTl HIPHIN T- 33- ? SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications.
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bdt60bdt60b711002b00432g4+6bdt61bdt61abdt61bbdt61co-220dg432
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74LV365
Abstract: 74LV365D 74LV365DB 74LV365N 74LV365PW 450PF1
Contextual Info: 1 Philips Semiconductors Product Specification Hex buffer/line driver; 3-state FEATURES • • • • • • • 74LV365 QUICK REFERENCE DATA GND = 0 V; T ^ = 25°C; tr = t, S 2.5 ns Optimized for Low Voltage applications: 1.0 to 3.6 V Accepts TTL input levels
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74lv36574hc/hct365711002b74lv365d+474lv365db74lv365n74lv365pw450pf1
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FR-350
Abstract: BGX881 DIN45004B
Contextual Info: Philips Semiconductors Product specification CATV amplifier module FEATURES BGX881 PINNING - SOT115D • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 • Silicon nitride passivation 2 common • Rugged construction 3 common • Gold metallization ensures
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bgx881ot115dmsb041711002b+2fr-350din45004b
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UHF transistor GHz
Abstract: BFG93AW DD44 pa 4010
Contextual Info: Product specification Philips Semiconductors BFG93AW BFG93AW/X; BFG93AW/XR NPN 7 G H z w id eb an d tra n s isto r MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG93AW R8 • Gold m etallization ensures excellent reliability. BFG93AW/X
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bfg93awbfg93aw/xbfg93aw/xrot343+4ot343ruhf transistor ghzdd44pa 4010
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irf 4095
Abstract: prescaler 64 SA7025 SA7025DK SR00602 T22N
Contextual Info: Product specification Philips Semiconductors 1GHz low-voltage Fractional-N synthesizer SA7025 PIN CONFIGURATION DESCRIPTION The SA7025 is a monolithic low power, high performance dual frequency synthesizer fabricated in QUBiC BiCMOS technology. Featuring Fractional-N division with selectable modulo 5 or 8
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sa7025ot266-1irf 4095prescaler 64+3sa7025dksr00602t22n
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74ALVT16601
Abstract: ALVT16601
Contextual Info: Philips Semiconductors Preliminary specification 2.5V/3.3V ALVT 18-bit universal bus transceiver 3-State 74ALVT16601 FEATURES DESCRIPTION • 18-bit bidirectional bus interface The 74ALVT16601 is a high-performance BiCMOS product designed for V cc operation from 2.5V to 3.3V with I/O compatibility
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18-bit74alvt1660164ma/-32ma500ma+4883ecot371-1mo-118alvt16601
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BF998
Abstract: MGA002 MGE802 bf998 Mop Dual-Gate cfs 455 j BB405 BF998R UGC469 marking code g1s
Contextual Info: Product specification Philips Semiconductors Silicon N-channel dual-gate MOS-FETs BF998; BF998R FEATURES • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS
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bf998bf998rot143ot143r+97110fl5bmga002mge802bf998 mopdual-gatecfs 455 jbb405ugc469marking code g1s
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ac motor servo control circuit diagram
Abstract: C-BUS Microcontroller Interface metal detector diagram PI QFP64 SAA7345 SAA7372 TDA1301 TDA1301T qfp100 wz Biphase mark code
Contextual Info: Philips Semiconductors Preliminary specification Single-chip digital servo processor and Compact Disc decoder CD7 CONTENTS 1 FEATURES 2 GENERAL DESCRIPTION 3 QUICK REFERENCE DATA 4 ORDERING INFORMATION 5 BLOCK DIAGRAM 6 PINNING 7 FUNCTIONAL DESCRIPTION 7.1
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saa73727110fl2bqch7550ac motor servo control circuit diagram+8c-bus microcontroller interfacemetal detector diagram piqfp64saa7345tda1301tda1301tqfp100 wzbiphase mark code
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philips 3h1
Abstract: OM389B ld photocoupler metal detectors IC om hybrid ic philips 3h1 pot core OM388B metal detector coil DIAGRAM Proximity Detectors for metal detector M1240
Contextual Info: OM388B OM389B JI - PHILIPS INTERNATIONAL . 711D4gb ^ m ~ ~T'Ct>S 'O S HYBRID INTEGRATED CIRCUITS FOR INDUCTIVE PROXIMITY DETECTORS H y b rid integrated c ircu its intended fo r indu ctive p ro x im ity detectors in tu b u la r co n stru ctio n , especially
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om388bom389b7110fl2bphilips 3h1+7ld photocouplermetal detectors icom hybrid icphilips 3h1 pot coremetal detector coil diagramproximity detectors for metal detectorm1240
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m1722
Abstract: M1247 BYQ27 DIODE m1 M3048 M3066 M3066A BYQ27-50 m8013
Contextual Info: 51.E T> m 711062t. o o m n o PHILIPS INTERNATIONAL 4TH « P H I N T - Ö 3 - /7 BYQ27 SERIES SbE D m m • B flÉ ULTRA FAST-RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward
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byq27m3053m1722m1247+6diode m1m3048m3066m3066abyq27-50m8013
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