71 SOT323 Search Results

L33 TRANSISTOR

Abstract: transistor L33 npn l33 l33 sot23 l33 thermal UBC370 DD44170 transistor KIN BF747 BF747W
Contextual Info: NPN 1 GHz wideband transistor PH IL IP S INTERNATIONAL DESCRIPTION "/ ' SbE D • 3 i^ /^ 7 BF747W 71 1D ô E b G D 4 4 ‘17D L33 « P H I N PINNING Silicon NPN transistor in a plastic SOT323 S-mini envelope. It is primarily intended as a mixer, oscillator and IF amplifier in UHF

INVERTER BOARD Asus A6

Abstract: ALC662 ICS9LPRS479AGLFT IT8752 Asus VW 192 Asus R2112 r3673 NT5TU64M16 Asus P5
Contextual Info: 5 4 3 2 AMD CPU S1g2 F7Z BLOCK DIAGRAM D 1 Dual Channel DDR2 DDR2 400-800 SO-DIMM X 2 D Page 7 ~ 9 Page 3 ~ 6 HT 3.0 2.6GHZ HDMI Page 71 LVDS AMD Page 45 CRT Page 55 RS780M PCI-E Page 46 TVCARD PCIE X4 C MINICARD Page 10 ~ 18 C AMD Page 53 PCI 33MHz SB700

Contextual Info: Philip« Semiconductors 711Dô2b G 0 b û 4 0 cl 3 T a • PH IN PNP general purpose transistor FEATURES BC807W; BC808W PIN CONFIGURATION • High current • S- mini package. DESCRIPTION PNP transistor in a plastic SOT323 package, for general switching and

Contextual Info: Super323 SOT323 NPN SILICON POWER SWITCHING TRANSISTOR ZUMT618 ISSUE 1 - SEPTEMBER 1998_ F E A TU R E S * 500m W POWER DISSIPATION * lc C O N T I.2 5 A * 3 A P eak P u ls e C u rre n t * E x c e lle n t H FE C h a ra c te ris tic s U p to 3 A (p u ls e d )

T617

Contextual Info: Super323 SOT323 PNP SILICON POWER SWITCHING TRANSISTOR ZU M T717 ISSUE 1 - SEPTEMBER 1998 FE A TU R E S * 500m W POWER DISSIPATION * lc CONTI.5A * * 3 A P eak P u ls e C u rre n t E x c e lle n t H pE C h a ra c te ris tic s U p T o 3 A (p u ls e d )

bc870

Abstract: Transistor BC870-40 BFR92a MARKING P2 TRANSISTOR MARKING CODE IAM marking IAM transistor sot-23
Contextual Info: Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW FEATURES DESCRIPTION • High power gain Silicon NPN transistor encapsulated in a plastic SOT323 S-mini package. The BFR92AW uses the same crystal as the SOT23 version, BFR92A.

marking 1GL

Abstract: marking G SOT323 Transistor BFR92A BFR92AW
Contextual Info: Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW FEATURES DESCRIPTION • High power gain Silicon NPN transistor encapsulated in a plastic SOT323 S-mini package. The BFR92AW uses the same crystal as the SOT23 version, BFR92A.

Contextual Info: BAS19W - BAS21W SURFACE MOUNT FAST SWITCHING DIODE Features Mechanical Data • Fast Switching Speed • • Surface Mount Package Ideally Suited for Automated Insertion • • For General Purpose Switching Applications Case: SOT323 Case Material: Molded Plastic, "Green" Molding Compound,

opto P113

Abstract: p112 opto LD1085-33 3v3 sot A9 sot323 jtms 100 V334 A18 sot M74HC126 ESDA6V1-5W6
Contextual Info: BOOT BOOT_EN SW2 SW1 +3V3 GND BOOT CLK CK RTCXTI RTCXTO +3V3 GND UARTx GND +3V3 +5V TX_0 RX_0 D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0 MISO GND MOSI U2 I/O1 I/O5 GND I/O4 I/O2 I/O3 U3 not Reset 6 DBGRQS SCLK 5 4 ESDA6V1-5W 6-SOT323-6L 1 2 3 ESDA6V1-5W 6-SOT323-6L

MRF917T1

Abstract: Sot323 MRF917T1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Small Signal Line MRF917T1 NPN Silicon High-Frequency Transistors Designed for low noise, wide dynamic range front end amplifiers, at frequencies to 1.5 GHz. Specifically aimed at portable communication devices

ISL9504

Abstract: j4310 BD9828 ISL9504B NVIDIA G84m RN5VD30A-F SLG2AP101 Q7080 88E8058 PP3V42G3H
Contextual Info: 8 6 7 04/02/2007 Contents D Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM

BUP213

Abstract: BSS123L6327 BSS123E6327 bup314d IPD06N03LAG BSP170PE6327T BSP315 SPD06N80C3XT BSP295-L6327 BSP129E6327
Contextual Info: Mosfets TO-218AB TO-220AB and TO-220 1-G TO-220FP TO-247 1 G 2 D 3 S 1-G 1-G 2-C 2-D 3-E TO-262 NEW! 3-S D-PAK, D2-PAK and TO-252 D D 2 S 3-S 3 SO-8 Dual G2 S2 1 3-D D2 D2 D 5 3-S 2-D G2 1 D 2 D G1 G 1 D1 4 3 2 2 1 G 6 7 D 8 D D 8 7 D 6 D 2-D 4 D D C 3 2S

QFN10

Abstract: STG3682QTR STG5223qtr STG3856QTR amplifier QFN16 STG3692QTR STG3699QTR IEC-61000-4-2 STG3155DTR STG3159DTR
Contextual Info: Analog switches Selection guide November 2007 www.st.com High contact discharge ESD performance switches Package IEC-61000-4-2 ESD, contact discharge [kV] IEC-610004-2 ESD, air discharge [kV] Supply voltage Channel STG4159BJR Flip chip 7 10 15 1.65 to 4.8

2SC1424

Abstract: s2l sot23
Contextual Info: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES • LOW NOISE FIG UR E: < 3 dB at 500 MHz • HIGH G A IN : 15 dB at 500 MHz B • HIGH G AIN BAN D W ID TH PR O D U C T: 2 GHz 3 GHz for the NE73435 • S M A LL C O LLEC TO R C A P A C IT A N C E : 1 pF

RQW130N03

Abstract: rqw200n03 sp8k10s mosfet rqw 130 SP8K10 RQA200N03 mosfet rqa 130 RQW130 RQA130N03 RQW 130
Contextual Info: Product Catalog MOSFETs Discrete Semiconductors 2007-Dec. www.rohm.com ROHM MOSFETs In the society these days, MOSFET is getting rapidly popular as a key-device in many applications, such as mobile phones and automotive electronics. ROHM will keep developing new devices exactly following the

2SC1424

Abstract: 2SC1733 pt 5767 Rf transistor 2SC2026 transistor 2sc2026 transistor "micro-x" "marking" 3 2SC2148 NE734 NE73400 NE73416
Contextual Info: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES • LOW NOISE FIGURE: < 3 dB at 500 MHz • HIGH GAIN: 15 dB at 500 MHz • HIGH GAIN BANDWIDTH PRODUCT: 2 GHz 3 GHz for the NE73435 • SMALL COLLECTOR CAPACITANCE: 1 pF • DUAL CHIP CONFIGURATIONS

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Smatl Signal Line MRF927T1 MRF927T3 NPN Silicon Low Voltage, Low Current, Low Noise, High-Frequency Transistors lc = 10 mA LOW NOISE HIGH FREQUENCY TRANSISTOR Designed for use in low voltage, low current applications at frequencies to

SPP80P06PIN-ND

Abstract: BSS84P-L6327 BSS138N-L6327 IPD06N03LAG BSC042N03LSG IPD060N03LG BSS138N L6327 BSS123L6327 BSS138N SPP15P10PIN-ND
Contextual Info: Mosfets Cont. OptiMOS 2 Package Type ® Vds (V) TO-220AB N-CH 25 30 TO-220 N-CH 100 600 TO-220-3 N-CH 100 TO-251 N-CH 25 TO-262AB N-CH 25 D2-PAK N-CH 25 25 TO-252 N-CH 30 D-PAK N-CH 25 Bent up Leads DSO-8 N-CH 30 SUPERSO8 N-CH 30 25 TDSON-8 N-CH 30 25

transistor z 0607

Abstract: zt123
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Small Signal Line MRF577T1 NPN Silicon H igh-Frequency Transistor Designed for low noise, wide dynamic range front end amplifiers at frequencies to 1.5 GHz. Specifically aimed at portable communication devices such as pagers and hand-held phones.

24 LC 0261

Abstract: MRF927 42497 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Small Signal Line MRF927T1 M RF927T3 NPN Silicon Low Voltage, Low Current, Low Noise, H igh-Frequency Transistors lc = 10mA LOW NOISE HIGH FREQUENCY TRANSISTOR Designed for use in low voltage, low current applications at frequencies to

2SC1424

Abstract: MARKING Dt3 sot23 transistor 2SC2148 017 545 71 32 02 j60 mic mic J60 v3le 2SC202 2SC4185 NE734
Contextual Info: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES • LOW NOISE FIGURE: < 3 dB at 5 0 0 M H z • HIGH GAIN: 15 dB a t 5 0 0 M H z • HIGH GAIN BANDWIDTH PRODUCT: 2 G H z 3 G H z for th e N E 7 3 4 3 5 • SMALL COLLECTOR CAPACITANCE: 1 p F

CN30 capacitor

Abstract: CN32 NQPACK064SB nec 45 42 pin microcontroller 93 SOT89 NEC NEC Components Philippines
Contextual Info: Preliminary User’s Manual AB-065PI-64GK, AB-065PI-80GC, AB-065PI-100GF Application Boards AB-065PI Hardware Document No. U15676EE1V0UM00 Date Published August 2001  NEC Corporation 2001 Printed in Germany All brand names or product names are the property of their respective holders.

Contextual Info: MOTOROLA Order this document by MRF577T1/D SEMICONDUCTOR TECHNICAL DATA The RF Small Signal Line MRF577T1 NPN Silicon High-Frequency Transistor D e sig n e d for low noise, w ide dynam ic range front end am p lifiers at frequencies to 1.5 GHz. Specifically aimed at portable communication devices

DBX18

Abstract: header 17x2 ITT 1b6 diode 1a6 SMD diode SMD diode B2 3Pin abx-5 LCD module 20X2 3.3v DBX26 X77A-G-001-01 DBX15
Contextual Info: S1D13747 S5U13747B00B PFBGA Socket Module Board User Manual Document Number: X77A-G-001-01 Status: Revision 1.0 Issue Date: 2005/10/20 SEIKO EPSON CORPORATION 2005. All Rights Reserved. Information in this document is subject to change without notice. You may download and use this document, but only for your own use in