70V07 Search Results

ML-02-L

Abstract: d1645
Contextual Info: fax id: 5212 CYPRESS C Y 7 C 1 3 8 V /1 4 4 V /0 0 6 V /0 0 7 V PRELIMINARY C Y 7 C 1 3 9 V /1 4 5 V /0 1 6 V /0 1 7 V 3.3V 4K/8K/16K/32K x 8/9 Dual-Port Static RAM A u to m atic pow er-dow n Features E xp a n d ab le d ata bus to 16 /18 bits o r m o re using M as ter/

256K DPRAM

Abstract: IDT70914 IDT709149 70V261 70V25 70V24
Contextual Info: SYNCHRONOUS DUAL-PORT STATIC RAMS FOR DSP AND COMMUNICATION APPLICATIONS APPLICATION NOTE AN-144 Integrated Device Technology, Inc. By Jeffrey C. Smith ABSTRACT The Sequential Access Random Access Memory The first of the synchronous components to be presented

IDT70914

Abstract: IDT709149
Contextual Info: DUAL-PORT STATIC RAMS FOR DSP AND COMMUNICATION APPLICATIONS APPLICATION NOTE AN-144 Integrated Device Technology, Inc. is the SARAMTM. The SARAM Sequential Access Random Access Memory is a specialty dual-ported RAM which allows bi-directional access from both a synchronous port and an

016v

Contextual Info: fax id: 5212 51 CY7C138V/144V/006V/007V PRELIMINARY CY7C139V/145V/016V/017V 3.3V 4K/8K/16K x 16/18 Dual-Port Static RAM Features • Automatic power-down • Expandable data bus to 16/18 bits or more using Master/ Slave chip select when using more than one device

A12L

Abstract: A13L A14L IDT70V07 IDT70V07L IDT70V07S
Contextual Info: PRELIMINARY 70V07S/L HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simultaneous access of the same memory location • High-speed access — Commercial: 25/35/55ns max.

Contextual Info: 70V07S/L HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simulta­ neous access of the same memory location • High-speed access — Commercial: 25/35/55ns max. • Low-power operation

Contextual Info: HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM PRELIMINARY 70V07S/L F e a tu re s True Dual-Ported memory cells which allow simultaneous access of the same memory location ♦ High-speed access ♦ - ♦ Commercial: 25/35/55ns max. Low-power operation -

70V06

Abstract: IDT70V05
Contextual Info: 1 CY7C138V/144V/006V/007V PRELIMINARY CY7C139V/145V/016V/017V 3.3V 4K/8K/16K/32K x 8/9 Dual-Port Static RAM • Fully asynchronous operation • Automatic power-down • Expandable data bus to 16/18 bits or more using Master/ Slave chip select when using more than one device

GNDBH 02

Contextual Info: U t Integrated Device Technology, Inc. HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM PRELIMINARY 70V07S/L FEATURES: • True Dual-Ported memory cells which allow simulta­ neous access of the same memory location • High-speed access — Commercial: 25/35/55ns max.)

EPM5128LC

Abstract: IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY2148-35C CY7C148-35C CY7C168A-45M CY7C168A-35M+ 5962-8871310RX 5962-8983913RX CY2148-35M CY7C148-35M CY7C169A-35C

marking 2943

Abstract: A12L A13L A14L IDT70V07 IDT70V07L IDT70V07S MARKING A14L
Contextual Info: 70V07S/L HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simultaneous access of the same memory location • High-speed access — Commercial: 25/35/55ns max. • Low-power operation

70V06

Abstract: 70V07 IDT70V05
Contextual Info: 25/0251 CY7C138AV/144AV/006AV CY7C139AV/145AV/016AV CY7C007AV/017AV 3.3V 4K/8K/16K/32K x 8/9 Dual-Port Static RAM Features • Fully asynchronous operation • Automatic power-down • Expandable data bus to 16/18 bits or more using Master/ Slave chip select when using more than one device

Contextual Info: HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM PRELIMINARY 70V07S/L Integrated Device Technology, Inc. FEATURES: • True D ual-Ported m em ory cells which allow simulta­ neous reads of the sa m e m em ory location • High-speed access — Com m ercial: 25 /3 5 /5 5 n s m ax.

Contextual Info: HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM PRELIMINARY 70V07S/L I n te g r a te d D e v i z e T e c h n o lo g y , l i e . FEATURES: • True Dual-Ported memory cells which allow simulta­ neous access of the same memory location • High-speed access

CY7C144V-25AC

Contextual Info: fax id: 5212 C Y 7 C 1 3 8 V /1 4 4 V /0 0 6 V /0 0 7 V CYPRESS P R E L IM IN A R Y Ç Y 7 C 1 3 9 V /1 4 5 V /0 1 6 V /0 1 7 V 3.3V 4K /8K /16K x 16/18 Dual-Port Static RAM Features • Automatic power-down • Expandable data bus to 16118 bits or more using Master/

A12L

Abstract: A13L A14L IDT70V07 IDT70V07L IDT70V07S
Contextual Info: HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 25/35/55ns max. – Industral: 25ns (max.) Low-power operation