70710 Search Results

Contextual Info: MOSEL PR ELIM INAR Y _ MS314001 524,288 x 8 CMOS Mask Programmable ROM 32 Pin DIP FEATURES DESCRIPTION • HIGH Speed: 707100/150ns access time The high performance MS314001 Read Only Memory is organized as 524,288 bytes by 8 bits. It is designed to

Contextual Info: MOSEL MS318001 -j ,048,576 x 8 CMOS Mask Programmable ROM 32 Pin DIP p r e l im in a r y FEATURES DESCRIPTION • HIGH Speed: 707100/150ns access time The high performance MS318001 Read Only Memory is organized as 1,048,576 bytes by 8 bits. It is designed to

MS318001-100PC

Abstract: MS318001-150PC MS318001-70PC Zl07
Contextual Info: MOSEL MS318001 1,048,576 x 8 CMOS Mask Programmable ROM 32 Pin DIP P R E L IM IN A R Y FEATURES DESCRIPTION • HIGH Speed: 707100/150ns access time The high performance MS318001 Read Only Memory is organized as 1,048,576 bytes by 8 bits. It is designed to

OE1T

Contextual Info: MOSEL PRELIMINARY MS318001 1,048,576 x 8 CMOS Mask Programmable ROM 32 Pin DIP FEATURES DESCRIPTION • HIGH Speed: 707100/150ns access time The high performance MS318001 Read Only Memory is organized as 1,048,576 bytes by 8 bits. It is designed to be compatible with all microprocessors and similar

MS314001-100PC

Abstract: MS314001-150PC MS314001-70PC
Contextual Info: M OSEL MS314001 524,288 x 8 CMOS Mask Programmable ROM 32 Pin DIP FEATURES DESCRIPTION • HIGH Speed: 707100/150ns access time • Low Power operation: 200m W Active @ 10MHz, Max. 500|iW Standby CM OS levels, Max. The high performance M S314001 Read Only Memory is

KM68U1000B

Abstract: KM68V1000B
Contextual Info: CMOS SRAM KM68V1000B, KM68U1000B Family 128Kx8 bit Low Power & Low Vcc CMOS Static RAM GENERAL DESCRIPTION FEATURE SUMMARY • Process Technology: 0.6 um CMOS • Organization : 128Kx8 • Power Supply Voltage KM68V1000B fa m ily : 3.3V +/- 0.3V KM68U1000B family : 3.0V +/- 0.3V

TI-81 DATASHEET

Abstract: sy 351 service manual proton 1100 TI-85 ti89 siemens fl 4141 ts 4141 dot matrix printer circuit diagram datasheet EE-149 Tesla MAC 156
Contextual Info: spine back front 8.06 Texas Instruments U.S.A. 7800 Banner Dr. Dallas, TX 75251 Texas Instruments Holland B.V. Rutherfordweg 102 3542 CG Utrecht-The Netherlands TI-89 1998 Texas Instruments ti-cares@ti.com w w w. t i . c o m / c a l c 6.06 ENG 9815798-0101

A1947

Contextual Info: VS105E2 Ordering number : ENA1947 SANYO Semiconductors DATA SHEET VS105E2 ESD Protection Device for High-speed signal Line typ. 0.3pF Features • • • • Low capacitance (0.3pF) & high ESD immunity (18kV@IEC61000-4-2 contact discharge) Bidirectional characteristic Best suited for antenna (One Seg / GPS / FM) ESD protection

Contextual Info: Ordering number : ENA1577D LE25FS406 CMOS IC 4M-bit 512Kx8 Serial Flash Memory Overview The LE25FS406 is a SPI bus flash memory device with a 4M bit (512K × 8-bit) configuration. It uses a single 1.8V power supply. While making the most of the features inherent to a serial flash memory device, the LE25FS406 is housed

A1776

Contextual Info: MCH6437 Ordering number : ENA1776 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6437 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=18mΩ (typ.) 1.8V drive Specifications Absolute Maximum Ratings at Ta=25°C

KM68V4000

Contextual Info: KM68V4000A Family CMOS SRAM 512Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • The Process Technology : 0.4 um CMOS Organization : 512K x 8 Power Supply Voltage : 3.3 +/- 0.3V * Low Data Retention Voltage : 2V Min

CIRCUIT 01 94HB

Contextual Info: Pushbutton Product Selection Guide Pushbutton A Pushbutton Series ELUM EP TP Mom./ Latching Tiny Tiny Poles/Throws SPDT SPST, SPDT, DPST SPST, SPDT, DPST SPDT, DPDT SPDT, DPDT, 3PDT, 4PDT Max. Current 3.5 VA 1 Amp 1 Amp 1 Amp 1 Amp Switch Type Process Sealed

ecg semiconductors master replacement guide

Abstract: ecg master replacement guide mkl b32110 siemens mkp B32650 c945 p 331 ks transistor IC,MASTER master replacement guide Kennlinie KTY 10-6 siemens b32110 A2005 transistor
Contextual Info: Liebe Schuricht-Kunden, Ihre Zufriedenheit ist unser größtes Anliegen. Aus diesem Grunde versuchen wir, Ihnen Informationen und Ware stets zum richtigen Zeitpunkt verfügbar zu machen. Das gilt insbesondere auch für die Produkte der Siemens AG mit den drei

Contextual Info: Ordering number : ENA1796A BFL4004 N-Channel Power MOSFET http://onsemi.com 800V, 6.5A, 2.5Ω, TO-220F-3FS Features • • ON-resistance RDS on =1.9Ω (typ.) Input capacitance Ciss=710pF (typ.) 10V drive • Specifications Absolute Maximum Ratings at Ta=25°C

CPH3215

Contextual Info: CPH6539 注文コード No. N A 1 7 5 6 三洋半導体データシート N CPH6539 NPN エピタキシァルプレーナ型シリコントランジスタ DC / DC コンバータ用 特長 ・ 小型パッケージに NPN トランジスタ CPH3215 相当 を 2 in 1

A1757

Abstract: jeita sc-96 CPH6538 30C02CH 7018A-006 SC-96 JEDEC SC-95 JEDEC
Contextual Info: CPH6538 注文コード No. N A 1 7 5 7 三洋半導体データシート N CPH6538 NPN エピタキシァルプレーナ型シリコントランジスタ DC / DC コンバータ用 特長 ・ 小型パッケージに NPN トランジスタ 30C02CH 相当 を 2 in 1

Contextual Info: Ordering number : ENA1776A MCH6437 N-Channel Power MOSFET http://onsemi.com 20V, 7A, 24mΩ, Single MCPH6 Features • • • ON-resistance RDS on 1=18mΩ (typ.) 1.8V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol

a1711

Abstract: A1711-2 ENA1711 ATP114 A1711-1 A1711-3
Contextual Info: ATP114 Ordering number : ENA1711 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP114 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=12mΩ(typ.) 4V drive • • Input Capacitance Ciss=4000pF(typ.) Halogen free compliance

A1776

Abstract: transistor A1776 datasheets MCH6437 SC82
Contextual Info: MCH6437 Ordering number : ENA1776 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6437 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=18mΩ (typ.) 1.8V drive Specifications Absolute Maximum Ratings at Ta=25°C

KM62V256CLE

Contextual Info: KM62V256C, KM62U256C Family CMOS SRAM 32Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.7 uM CMOS • Organization : 32K x 8 • Power Supply Voltage KM62V256C family : 3.3V +/- 0.3V KM62U256C family : 3.0V +/- 0.3V

2183A

Contextual Info: KM68V1000C, KM68U1000C Family CMOS SRAM 128Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4|jm CMOS • Organization : 128K x 8 • Power Supply Voltage KM68V1000C family : 3.3V ± 0.3V KM68U1000C family : 3.0V ± 0.3V

CRC10

Abstract: 70710
Contextual Info: CRC10 2322 485 yy v . _ 10 mm C A R B O N C O N T R O L P O T E N T IO M E T E R S Q U IC K R E F E R E N C E D ATA Resistance range E3-series linear law logarithmic/inverse log. law 1 ki2 to 4,7 M£2 2,2 TO 2,2 MS2 Maximum dissipation a: 40 ° C linear law

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

A1796

Contextual Info: BFL4004 Ordering number : ENA1796 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET BFL4004 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on =1.9Ω (typ.) Input capacitance Ciss=710pF (typ.) 10V drive Specifications