VEC2811
Abstract: 82871
Contextual Info: VEC2811 Ordering number : ENN8287 VEC2811 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • • DC/DC converter. Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package
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FSS172
Abstract: S172
Contextual Info: FSS172 Ordering number : EN8286A SANYO Semiconductors DATA SHEET FSS172 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C
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VEC2811
Abstract: 82871
Contextual Info: VEC2811 注文コード No. N 8 2 8 7 三洋半導体データシート N VEC2811 MOSFET : P チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・DC / DC コンバータ用。
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FSS172
Abstract: S172
Contextual Info: FSS172 Ordering number : ENN8286 FSS172 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
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