70000H Search Results

NCC equivalent

Contextual Info: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH M EMORIES • I • Single Power Supply Supports 5 V ± 10% Read/Write Operation I I • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors

s29f

Contextual Info: TMS29F040 4194304-BIT FLASH MEMORY S M J S 8 2 0 A - A P R IL 1 9 9 6 - R E V IS E D J A N U A R Y 1 9 9 7 I * Single Power Supply 5 V ± 10% FM PACKAGE T O P V IE W cm lo co co O r~. < < < < > I5 < i— i l — i l — il— i l — i l — il— i 4 '

Contextual Info: TMS29F040 524288 BY 8-BIT FLASH MEMORY SMJS820B - APRIL 1996- REVISED NOVEMBER 1987 • • • • • • • • • • Single Power Supply 5 V± 10% - 3.3 V ± 0.3 V - See ’29LF040/’29VF040 Data Sheet Literature Number SMJS825 - 2.7 V to 3.6 V - See ’29LF040/’29VF040

ba qu

Abstract: TC58F401
Contextual Info: INTEGRATED TOSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58F400F / FT - 90, - 1 0 TC58F401F / FT - 90, - 1 0 SILICON GATE CMOS TENTATIVE DATA 4M 524,288 W O RD S x 8 BITS/262,144 W ORDS x16 BITS CMOS FLASH M EM O RY DESCRIPTION

A29L008

Abstract: SA10 SA11 SA12 SA13 SA14 SA15 SA16
Contextual Info: A29L008 Series 1M X 8 Bit CMOS 3.0 Volt-only, Preliminary Boot Sector Flash Memory Features n Single power supply operation - Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications n Access times: - 70/90 max. n Current:

a29040al-70

Abstract: A29040A-55 A29040A A29040A-70 A29040AL A29040AL-55 A29040AV-55 IN3064
Contextual Info: A29040A Series 512K X 8 Bit CMOS 5.0 Volt-only, Preliminary Uniform Sector Flash Memory Features n 5.0V ± 10% for read and write operations n Access times: - 55/70/90 max. n Current: - 20 mA typical active read current - 30 mA typical program/erase current

am29f400bb

Abstract: am29f400bb v am29f400 known good AM29F400B7 am29f400b 20185 AM29F400BT
Contextual Info: Am29F400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations — Minimizes system level requirements

CompactCellTM Static RAM

Contextual Info: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS

GL032A

Abstract: S71GL032A S71GL032
Contextual Info: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this

A29L800

Abstract: A29L800V
Contextual Info: A29L800 Series 1M X 8 Bit / 512K X 16 Bit CMOS 3.0 Volt-only, Preliminary Boot Sector Flash Memory Features n Single power supply operation - Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications n Access times: - 70/90 max.

M29W008A

Abstract: M29W008AB M29W008AT
Contextual Info: M29W008AT M29W008AB 8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 80ns ■ PROGRAMMING TIME: 10µs typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte

Contextual Info: FUJITSU SEMICONDUCTOR CM44-10134-1E CONTROLLER MANUAL 2 F MC-16LX 16-BIT MICROCONTROLLER MB90945 Series HARDWARE MANUAL F2MC-16LX 16-BIT MICROCONTROLLER MB90945 Series HARDWARE MANUAL FUJITSU LIMITED PREFACE • Objectives and intended reader Thank you very much for your continued patronage of Fujitsu semiconductor products.

Contextual Info: FUJITSU SEMICONDUCTOR CONTROLLER MANUAL CM44-10103-5E 2 F MC-16LX 16-BIT MICROCONTROLLER MB90550A/B Series HARDWARE MANUAL 2 F MC-16LX 16-BIT MICROCONTROLLER MB90550A/B Series HARDWARE MANUAL Be sure to refer to the “Check Sheet” for the latest cautions on development.

Contextual Info: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion

Contextual Info: FUJITSU SEMICONDUCTOR CM44-10102-5E CONTROLLER MANUAL 2 F MC-16LX 16-BIT MICROCONTROLLER MB90570/A series HARDWARE MANUAL 2 F MC-16LX 16-BIT MICROCONTROLLER MB90570/A series HARDWARE MANUAL FUJITSU LIMITED PREFACE • Objectives and Intended Reader Thank you for your interest in Fujitsu semiconductor products.

Contextual Info: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion

Contextual Info: PCM1760P/U DF1760P/U Multi-Bit Enhanced Noise Shaping 20-Bit ANALOG-TO-DIGITAL CONVERSION SYSTEM FEATURES DESCRIPTION ● DUAL 20-BIT MONOLITHIC MODULATOR PCM1760 AND MONOLITHIC DECIMATING DIGITAL FILTER (DF1760) ● HIGH PERFORMANCE: THD+N: –92dB typ, –90dB max

diode T35 12H

Abstract: ST10F269Z2Q6 ST10F269Q ST10F269Z2T3 PQFP144 ST10F269 TQFP144 diode t318 BB126 st10 Bootstrap
Contextual Info: ST10F269 16-BIT MCU WITH MAC UNIT, 128K to 256K BYTE FLASH MEMORY AND 12K BYTE RAM DATASHEET • ■ 2K Byte Internal RAM 16 CPU-Core and MAC Unit Watchdog 16 10K Byte XRAM CAN1_RXD CAN1_TXD CAN1 CAN2_RXD CAN2_TXD CAN2 PEC Oscillator and PLL 16 Interrupt Controller

Contextual Info: AMDB Am29LV081 B 8 Megabit 1 M x 8-Bit CMOS 3.0 Volt-only Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • Optimized architecture for Miniature Card and mass storage applications ■ Single power supply operation — 2.7 to 3.6 volt read and write operations for

Contextual Info: A M D tl Am29DL800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations — Host system can program or erase in one bank, then immediately and simultaneously read from

20510D

Contextual Info: P R E L IM IN A R Y AMD3 Am29LV004 4 Megabit 512 K x 8-Blt CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications

AN1995

Abstract: M25P40
Contextual Info: M25P40 4 Mbit, low voltage, Serial Flash memory with 50MHz SPI bus interface Feature summary • 4 Mbit of Flash Memory ■ Page Program up to 256 Bytes in 1.5ms (typical) ■ Sector Erase (512 Kbit) in 1s (typical) ■ Bulk Erase (4 Mbit) in 4.5s (typical)

Am29DL400BT

Contextual Info: MiN AR AMDZ1 Am29DL400B 4 Megabit 512 K x 8-Blt/2S6 K x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations Sector protection — Host system can program or erase in one bank,

Contextual Info: PRELIMINARY AMDZ1 Am29LV081 B 8 Megabit 1 M x 8-Bit CMOS 3.0 Volt-only Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • ■ Optim ized architecture for Miniature Card and mass storage applications ■ Single power supply operation — 2.7 to 3.6 volt read and w rite operations for