70.4 L MARKING Search Results

35 15 rail en 50022

Abstract: 70.4 L marking en 50022 ts 35
Contextual Info: Electronic housings WEB housing system housing system System advantages: • Open modules can be snapped together to any length • Complete custom design possible • The modular design enables quick assembly • High torsional rigidity due to the firm interconnection of the

TELEFUNKEN* U 413 B

Abstract: MAR 641 TRANSISTOR transistor MAR 439
Contextual Info: T emic BFR96T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications RF-araplifier up to GHz range specially for wide band an­ tenna amplifier. Features • High power gain • Low noise figure • High transition frequency BFR96T Marking: BFR96T

LCD-020N004A

Abstract: LCD-020N004B
Contextual Info: LCD-020N004A, LCD-020N004B Vishay 20 x 4 Character LCD FEATURES • • • • • • • • • • MECHANICAL DATA ITEM Type: Character Display format: 20 x 4 characters Built-in controller: KS 0066 or equivalent Duty cycle: 1/16 5 x 8 dots includes cursor

52-257-006-A

Abstract: 52-227-004 BARRIER TERMINAL if filter 38,9 marking AOO PCB terminal blocks 52-160-004-A
Contextual Info: Filtered Terminal Blocks Barrier Strip Filtered Terminal Blocks The barrier strip filtered terminal block is designed provide excellent EMI/RFI filtering of AC and DC power lines and control lines. This terminal block is available in various sizes, with terminal for soldering,

tb 1253 ang

Contextual Info: BFR90A Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain • Low noise figure

transistor MAR 819

Abstract: transistor MAR 543 sl2 357 BFS17
Contextual Info: Tem ic BFS17/BFS17R Sem iconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package BFS17 Marking: El Plastic case SOT 23 1= Collector; 2= Base: 3= Emitter BFS17R Marking: E4

Contextual Info: DSub 8350 Series Socket Connector, 50 Position • IDC com patible • Low er insertion/w ithdraw al force than other 50 position products • Available in either preassem bled or tw o piece covers • Available in either open or closed end cover • M ounting options include #4-40 UNC or m etric

bfr96s

Contextual Info: SIEMENS BFR 96S NPN Silicon RF Transistor • For low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 2 GHz at collector currents from 10 mA to 70 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions!

TRANSISTOR PEC 545

Contextual Info: BFR96T V IS HAY Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain • Low noise figure

BFR90 transistor

Abstract: BFR90 telefunken ha 680 BFR90 amplifier BFR90S
Contextual Info: Temic BFR90 Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain • Low noise figure • High transition frequency BFR90 Marking: BFR90 Plastic case TO 50

ML 1557 b transistor

Abstract: lm 1766 ic LM 748
Contextual Info: TEMIC BFR90A S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain

MAR 618 transistor

Abstract: MAR 641 TRANSISTOR bfr96ts MAR 527 transistor L 0403 817
Contextual Info: Temic BFR96TS Semiconductor i Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain • Low noise figure • High transition frequency BFR96TS Marking: BFR96TS Plastic case ~ TO 50

zo 107 NA P 611

Abstract: BFR96 L 0403 817 BFR96T
Contextual Info: TEMIC BFR96T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF-amplifier up to GHz range specially for wide band an­ tenna amplifier. Features • High power gain

t14n03

Abstract: 14n03 T14 N03 t14-n03 NTD14N03RT4 369D NTD14N03R
Contextual Info: NTD14N03R Power MOSFET 14 Amps, 25 Volts N−Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in

14N03

Contextual Info: NTD14N03R, NVD14N03R Power MOSFET 14 A, 25 V, N−Channel DPAK Features • • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in

Contextual Info: PRELIMINARY DATA SHEET_ NPN SILICON RF TRANSISTOR 2SC5507 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Low noise and high gain with low collector current

MS2735

Abstract: M85049 STRAIN RELIEF ASSEMBLY INSTRUCTIONS 620HS MS2750 M83723/60-1 770-006 M85049/18 ASSEMBLY INSTRUCTIONS
Contextual Info: TH E WORLD ' S M OST COM P L ETE SE LE C TI ON OF M I L -SP EC BACKSHELLS AND CO N NE C T O R AC C E SS O RIES—F ROM AS850 49 TO MIL -DTL -38 9 9 9 NOVEMBER 2013 QUALIFIED MIL-SPEC Connector Backshells and Accessories Tens of thousands of parts in-stock

din 3141

Contextual Info: TEMIC BFW92A Semiconductors Silicon NPN Planar RF Transistor Applications Electrostatic sensitive device. Observe precautions for handling. ^ Wide band RF amplifier up to GHz range. Features • High power gain • Low noise figure BFW92A Marking: BFW92A Plastic case TO 50

Contextual Info: 2SC5758 Silicon NPN Epitaxial VHF / UHF Wide band amplifier REJ03G0754-0500 Previous ADE-208-1397D Rev.5.00 Aug.10.2005 Features Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm) Outline RENESAS Package code: PUSF0003ZA-A (Package name: MFPAK R ) 3 1. Emitter

photo-electric switch

Abstract: Sensick sick WL24 MS3400D12S-3EX L/C
Contextual Info: KD01_Ex_3D_3G_en.qxd 07.08.2006 Photoelectric proximity switches BGS Photoelectric reflex switches Through-beam photoelectric switches 10:28 Uhr Seite 1058 Ready-to-fit and Standardcompliant - Cat. 3D/3G Photoelectric Switches for Explosive Areas The Category 3D/3G photoelectric switches from SICK are

Contextual Info: Miniature Aluminum Electrolytic Capacitors FEATURES • LOW PROFILE 5mm HEIGHT • SPACE SAVING AT COMPETITIVE PRICING NSR Series RoHS Compliant includes all homogeneous materials *See Part Number System for Details CHARACTERISTICS Rated Voltage Range Capacitance Range

Contextual Info: BFR90A vmrnr ▼ Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain •

NSR220M35V6.3X5

Abstract: NSR4R7M50V nsr diode NSR101M16V6.3X5F nsr1r0m50v4x5f NSR330M10V5X5F
Contextual Info: Miniature Aluminum Electrolytic Capacitors FEATURES • LOW PROFILE 5mm HEIGHT • SPACE SAVING AT COMPETITIVE PRICING NSR Series RoHS Compliant includes all homogeneous materials *See Part Number System for Details CHARACTERISTICS Rated Voltage Range Capacitance Range

transistor D 5703

Abstract: transistor c 458
Contextual Info: T O SH IB A 2SC5255 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 SC 5 2 5 5 V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIOS • t Low Noise Figure High Gain : NF = 1.5dB f=2GHz : Gain = 8.5dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC