6SR7 Search Results

6SR7

Abstract: 6sR7 tube 6gr7 6gr7gt ED 08 65K7
Contextual Info: 6SR7, 6SR7GT TUNG-SOL MAX f DU O-D IODE ; 2f MAX. MT8G-I 2 76 1 MAX T R IO D E A M P L I F I E R . 21 3re MAX. O OATF.I; U 'M P O T L N T I A L C A T iiO u K HEATFR ME T A L :•!’ E L I 6 .3 A VOLTS AC THE TUNo-SOl S IN G L E AS D IO D E STORAGE 0 .3 OR

26c6 tube

Abstract: 6SR7 26c6 diode Scans-0017373 6sR7 tube
Contextual Info: 26C 6 DUPLEX-DIODE TRIODE M IN IA T U R E TYPE Fo r use w ith 12-cell storage-battery su pply GENERAL DATA El ec tr ic a l : H e a te r, f o r U n ip o t e n t ia l Cathode: V o lt a g e . 2 6 .5 . ac o r dc v o l t s

s23a4

Abstract: M5M4V18-60B8 M5M4V18
Contextual Info: M 5 M 4 V 1 8 1 6 0 B J ,T P ,R T - 6 , - 7 ,- 8 , - 6 S v 7 S ,- 8 S FAST PAGE MODE 16777216-BIT 1048576-WQRD BY 16-BIT DYNAMiC RAM DESCRIPTION This is a family of 1048576-w ord by 16-bit dynamic RAMS, fabricated with the high performance CM OS process,and is ideal for

6BF6

Abstract: 6SR7
Contextual Info: S VIA A M Y SVLVANIA engineering data service MECHANICAL DATA B u lb .T-51/2 B a se . E7-1, Miniature Button 7-Pin

6BF6

Abstract: 6SR7 Scans-00175 6ef6 metal detector diagram PI RK 1900 rs tube 6BF6 tube DIODE RK 69 general electric
Contextual Info: 6BF6 ET-T541 Page 1 6BF6 5-48 Description and Rating / f a ß g r iiC DUPLEX-DIODE TRIODE tubes IM G EN ERA L D ESCRIPTIO N Principal A p plication ; The 5EF6 i s a m i n i a t u r e d u p l e x - d i o d e , medi um- mu t r i o d e . I t i s d e s i g n e d

Contextual Info: M5M4V4100J,TP,RT-6,"7>8, -6S,-7S,-8S FAST PAGE MODE 4194304-BIT 4194304-WORD BY 1-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a fam ily o f 4 1 9 4 3 0 4 -w o rd by 1-b it dynamic RAMS, fabricated w ith the high performance CMOS process, and is

Contextual Info: MITSUBISHI LSIs M5M4V16400CJ,TP-5,-6,-7,-5S,-6S,-7S _FAST PAGE MODE 16777216-BIT 4194304-WQRD BY 4-BIT DYNAMIC RAM DESCRIPTION This is a fam ily of 4194304-word by 4-bit dynamic RAMs, fabricated with the high performance CMOS process, and is ideal

M5M417800AJ

Abstract: M5M417800 M5M417800A
Contextual Info: V TS 'JB 'S F! LSI s M 5 M 4 1 7 8 0 0 A J ,T P ,R T - 5 ,- 6 ,- 7 ,- 5 S ,- 6 S ,- 7 S FAST PAGE MODE 16777216-BIT 2097152-WORD BY 8-BIT DYNAMIC RAM DESCRIPTION This is a family of 2097152-word by 8-bit dynamic RAMS, fabricated with the high performance CMOS process,and is ideal

12sh7

Abstract: 12bz7 6AR5 3S4 tube 1AJ5 12ay7 5y4g 12BY7A 12B4A 12sh7 tube
Contextual Info: H EA TER V O L T A G E S A P P L IC A T IO N TUMG-SOL 1.4 INC. ELECTRON T R IO D E S 7A4 12H4 37 76 955 5718 5719 5744 9002 XXL 2C51 5BZ7Q 6AH 7GT 6BK7 6BK7A 6BK7B 6BF7 6BQ7A 6BZ7 6BX8 6DA7 6J6 6J6A 7AF7 7F7 7F8 7N7 5670 12AH7GT 12AT7 14AF7/XXD 14F7 14F8 19J6# %

12g8 tube

Abstract: 12BZ7 6AK7 tube 12G8 12bh7 tube 12by7 S4 5aA diode 6by5Ga 12BV7 6AL7
Contextual Info: TUBE TYPES NOT RECOMMENDED FOR NEW EQUIPMENT DESIGN The following listed electron tube types should not g enerally be con­ sidered for new equipment design without prior assurance of a v a ila ­ bility. Som e of these types use bulb or base styles or manufacturing

ECC89

Abstract: STR 6267 str g 5551 6C51H-B 6N3C ecc189 6H13C 6l6gt str f 6267 6CM5
Contextual Info: 6 Z a 121200 MOSKVA G 200 ELECTRONQRGTECHNICA 5 2 ELORG MOSKVA 200 0 240-96-07 5 3 411.386 REPLACEMENT GUIDE for USSR and FOREIGN ELECTRONIC TUBES U SSR - M O SC O W Type of U SSR Foreign eq u ivalen ts iA in 1147c 1142111 31422c 5J1038M 5I43C 5I44M K 5I44C

M5M418125

Abstract: M5M418125AJ5S m5m418
Contextual Info: MITSUBISHI LSIs M 5 M 4 1 8 1 2 5 A J - 5 ,-6 ,-7 ,-5 S ,-6 S ,-7 S HYPER PAGE MODE 1048576-BIT 131072-WQRD BY 8-BIT DYNAMIC RAM DESCRIPTION This is a family of 131072-word by 8-bit dynamic RAMs, fabricated PIN CONFIGURATION (TO P VIEW ) with a high performance C M O S process, and is ideal for largecapacity

6sd7

Abstract: rgn 1064 rgn 4004 RGN2004 EDD11 1e7k 12sf7 117L7 RGN 156 ECC40
Contextual Info: 01 A 1 A3 1 A4P 1A4T 1A5G 1 A6 Type RE 074 KB1 KF3 KF 3 D L11 KK 2 ähnlich 5 1.4 2 2 1.4 2 Vf 0.25 0.15 0.06 0.06 0,05 0.06 B B B B B B H e iz a r t N D H" H" EP M0+ O :tT V erm . 135 120'*) 180 180 90 180 Ua - 67,5 67.5 90 67,5 ü fc 9 - -3 3 -4,5 -3 Ug,

8Q DIODE

Abstract: 6SR7 Scans-0017290 6sR7 tube
Contextual Info: I2SW 7 DUPLEX-DIODE TRIODE F o r use w i t h 1 2 - c e l l s t o r a g e - b a t t e r y s u p p l y GENERAL DATA E lectrical: Heater, for Uni po te n tia l Cathode: ac or dc v o lt s 12.6 . . V o lta g e . C u rre n t.

sep703

Contextual Info: Prelim inary Spec. MITSUBISHI LSIs MH16M36CJ/CNJ-5,-6,-7r 5S,-6S,-7S FAST PAGE MODE 603979776-BIT 16777216-WORD BY 36-BIT DYNAMIC RAM PIN CONFIGURATION (TOP VIEW) [Double side] DESCRIPTION The MH16M36CJ/CNJ is 16777216-word by 36-bits dynamic RAM. This consists of thirty-six industry standard 16M by 1 dynamic

5186A

Abstract: M5M4V17805
Contextual Info: MITSUBISHI LSIs A it v M 5 M 4 V 1 7 8 5 C J , T - 5 P S - 5 , - 6 , - 6 S , - 7 , - 7 , S HYPER PAGE MODE 16777216-BIT 2097152-W O RD BY 8-B IT DYNAM IC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This Is a family of 2097152-word by 8-bit dynamic RAMs with