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    6R12 Search Results

    6R12 Result Highlights (1)

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    G40MV36R12BEU
    		Amphenol Communications Solutions MINI SAS Vertical SMT right key shell DIP cage length 3.4mm tape and reel package PDF
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    Eaton Bussmann MFLA1206R1200FS

    RES 0.12 OHM 1% 1/2W 1206
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    DigiKey () MFLA1206R1200FS Cut Tape 9,790 1
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    MFLA1206R1200FS Digi-Reel 9,790 1
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    MFLA1206R1200FS Reel 5,000 5,000
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    Vishay Dale WFC1206R1200FE66

    RES 0.12 OHM 0.5 W 1% 1206 SMD
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    DigiKey () WFC1206R1200FE66 Cut Tape 9,692 1
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    WFC1206R1200FE66 Reel 5,000 5,000
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    New Advantage Corporation WFC1206R1200FE66 10,000 1
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    Bourns Inc 4116R-1-203LF

    RES ARRAY 8 RES 20K OHM 16DIP
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    DigiKey 4116R-1-203LF Tube 1,930 1
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    Avnet Abacus 4116R-1-203LF 8 Weeks 2,000
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    Tri-Mag Inc L6R12-300

    AC/DC WALL MOUNT ADAPTER 30V 12W
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    DigiKey L6R12-300 Box 627 1
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    Tri-Mag Inc L6R12-050

    AC/DC WALL MOUNT ADAPTER 5V 11W
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    DigiKey L6R12-050 Box 545 1
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    6R12 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    63hl

    Abstract: 6R12
    Contextual Info: Catalog Search for type 066 Page 1 of 8 Cornell Dubilier Electronics, Inc Axial, 85°C and 105°C, Standard, Type 066 D ftft - Standard, OCiivX - Ma\ ill', O M R - I ligh Ripple Ideal for general purpose use where long life at rated temperature and operating voltage


    OCR Scan     		2/CS066 63hl 6R12 PDF

    6r125p

    Abstract: transistor 6R125P DF 331 TRANSISTOR transistor df 331 IPA60R125CP CA82 JESD22 PG-TO220-3-31 SP000095275 6R125
    Contextual Info: IPA60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R DS,on in TO220 Fullpak 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPA60R125CP PG-TO220-3-31 SP000095275 6R125P 6r125p transistor 6R125P DF 331 TRANSISTOR transistor df 331 IPA60R125CP CA82 JESD22 PG-TO220-3-31 SP000095275 6R125 PDF

    9R120C

    Abstract: 9r120 TF5S03ZZ MIL-PRF-27F 6R91CT 3R26 3R18 9r30-c 1-5R75 6R120CT
    Contextual Info: R 400 Hz MIL-PRF-27F Toroid Transformers • Military designation TF5S03ZZ • Compact toroidal construction in a convenient printed-circuit mount package. • Power levels 1. 5, 3, 6, and 9 VA • Standard output voltages 5 to 300 volts • Low outgassing molded


    Original     		MIL-PRF-27F TF5S03ZZ 115VAC, 115VRMS 910VRMS VRMS--200 5R62CT 3R62CT 6R62CT 9R62CT 9R120C 9r120 TF5S03ZZ 6R91CT 3R26 3R18 9r30-c 1-5R75 6R120CT PDF

    6r125p

    Abstract: transistor 6R125P PG-TO-247-3-1
    Contextual Info: IPW60R125CP CoolMOSTM Power Transistor Product Summary Features V DS • Lowest figure-of-merit R ONxQg R DS on ,max • Ultra low gate charge Q g,typ 600 V 0.125 Ω 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPW60R125CP PG-TO247-3-1 SP000088489 6R125P 6r125p transistor 6R125P PG-TO-247-3-1 PDF

    6R125

    Abstract: 6R125C6
    Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R125C6 Data Sheet Rev. 0.9, 2009-08-26 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R125C6, IPB60R125C6


    Original     		IPx60R125C6 IPA60R125C6, IPB60R125C6 IPP60R125C6 IPW60R125C6 6R125 6R125C6 PDF

    6r125c6

    Abstract: IPx60R125C6 MOSFET TRANSISTOR SMD MARKING CODE A1 INFINEON to-220 date code marking MOSFET TRANSISTOR SMD MARKING CODE 11 IPA60R125C6 IPB60R125C6 IPP60R125C6 to247 pcb footprint JESD22
    Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R125C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPA60R125C6, IPB60R125C6 IPP60R125C6 IPW60R125C6


    Original     		IPx60R125C6 IPA60R125C6, IPB60R125C6 IPP60R125C6 IPW60R125C6 6r125c6 IPx60R125C6 MOSFET TRANSISTOR SMD MARKING CODE A1 INFINEON to-220 date code marking MOSFET TRANSISTOR SMD MARKING CODE 11 IPA60R125C6 IPB60R125C6 to247 pcb footprint JESD22 PDF

    6r125p

    Abstract: transistor 6R125P 6R125 IPP60R125CP JESD22 SP000088488 CA82
    Contextual Info: IPP60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPP60R125CP PG-TO220 SP000088488 6R125P 6r125p transistor 6R125P 6R125 IPP60R125CP JESD22 SP000088488 CA82 PDF

    6r125p

    Abstract: transistor 6R125P br A 708 IPW60R125CP JESD22 SP000088489 CA82 6R125
    Contextual Info: IPW60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPW60R125CP PG-TO247-3-1 SP000088489 6R125P 6r125p transistor 6R125P br A 708 IPW60R125CP JESD22 SP000088489 CA82 6R125 PDF

    6r125p

    Abstract: transistor 6R125P 6R125 IPA60R125CP 6R125P TRANSISTOR JESD22 SP000095275 c25 diode to220 D16 marking code transistor ipa60r125
    Contextual Info: IPA60R125CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R DS,on in TO220 Fullpak 650 0.125 Ω R DS on ,max@T j= 25°C • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability


    Original     		IPA60R125CP PG-TO220 SP000095275 6R125P 6r125p transistor 6R125P 6R125 IPA60R125CP 6R125P TRANSISTOR JESD22 SP000095275 c25 diode to220 D16 marking code transistor ipa60r125 PDF

    6r125p

    Abstract: transistor 6R125P IPW60R125CP JESD22 SP000088489 CA82 6R125
    Contextual Info: IPW60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPW60R125CP PG-TO247-3-1 SP000088489 6R125P 6r125p transistor 6R125P IPW60R125CP JESD22 SP000088489 CA82 6R125 PDF

    VOGT p8

    Abstract: tic 2160 triac kaschke fi 270 uaa145 EQUIVALENT UAA145 "direct replacement" TDA1086T telefunken transistor Kaschke Components CQY40 UAA146
    Contextual Info: Allgemeines General Seite Page • H I Schaltungen fur Rundfunkempfanger Circuits for radio receivers Seite Page Schaltungen fur die Signalverarbeitung in Fernsehempfangern Circuits for the signal processing in television receivers Seite ■ Page ■ Schaltungen fur Bedienungssysteme in Rundfunk- und


    OCR Scan     		PDF

    6r125p

    Contextual Info: IPP60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPP60R125CP PG-TO220 SP000088488 6R125P 6r125p PDF

    6r125c6

    Abstract: 6R125 IPx60R125C6 marking code br SMD transistor transistor 600v IPA60R125C6 IPB60R125C6 IPP60R125C6 IPW60R125C6 JESD22
    Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R125C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R125C6, IPB60R125C6


    Original     		IPx60R125C6 IPA60R125C6, IPB60R125C6 IPP60R125C6 IPW60R125C6 6r125c6 6R125 IPx60R125C6 marking code br SMD transistor transistor 600v IPA60R125C6 IPB60R125C6 IPW60R125C6 JESD22 PDF

    IPB60R125CP

    Abstract: 6r125p
    Contextual Info: IPB60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V 53 Q g,typ nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPB60R125CP PG-TO263 SP000088488 6R125P IPB60R125CP 6r125p PDF

    6r125p

    Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 600VCoolMOS™P6PowerTransistor IPx60R125P6 DataSheet Rev.2.0 Final PowerManagement&Multimarket 600VCoolMOS™P6PowerTransistor IPW60R125P6,IPP60R125P6,IPA60R125P6 1Description


    Original     		IPx60R125P6 IPW60R125P6, IPP60R125P6, IPA60R125P6 O-247 O-220 6r125p PDF

    6r125p

    Abstract: transistor 6R125P 6R125 0380r MOSFET MARKING CODE 7V IPP60R125CP 6R125P IPP60R125CP
    Contextual Info: IPP60R125CP CoolMOSTM Power Transistor Product Summary Features V DS • Lowest figure-of-merit R ONxQg R DS on ,max • Ultra low gate charge Q g,typ 600 V 0.125 Ω 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPP60R125CP PG-TO220-3-1 SP000088488 6R125P 6r125p transistor 6R125P 6R125 0380r MOSFET MARKING CODE 7V IPP60R125CP 6R125P IPP60R125CP PDF

    6r125c6

    Abstract: IPP60R125C6 IPA60R125C6 6R125 c6 transistor IPB60R125C6 TRANSISTOR SMD MARKING CODE IPW60R125C6 JESD22
    Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R125C6 Data Sheet Rev. 2.0, 2009-09-25 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R125C6, IPB60R125C6


    Original     		IPx60R125C6 IPA60R125C6, IPB60R125C6 IPP60R125C6 IPW60R125C6 6r125c6 IPA60R125C6 6R125 c6 transistor IPB60R125C6 TRANSISTOR SMD MARKING CODE IPW60R125C6 JESD22 PDF

    6r125p

    Abstract: 6R125
    Contextual Info: IPB60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPB60R125CP PG-TO263 SP000088488 6R125P 6r125p 6R125 PDF

    6r125p

    Abstract: transistor 6R125P 6R125 IPI60R125CP JESD22 CA82
    Contextual Info: IPI60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPI60R125CP PG-TO220 PG-TO262 6R125P 6r125p transistor 6R125P 6R125 IPI60R125CP JESD22 CA82 PDF

    6R125

    Abstract: 6r125p IPP60R125CP transistor 6R125P SMD marking CODE F16 IPB60R125CP JESD22 SP000088488 CA82 IPP60R
    Contextual Info: IPB60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPB60R125CP PG-TO263 IPP60R125CP PG-TO220 SP000088488 6R125P 6R125 6r125p IPP60R125CP transistor 6R125P SMD marking CODE F16 IPB60R125CP JESD22 SP000088488 CA82 IPP60R PDF

    6r125p

    Abstract: transistor 6R125P 6R125 IPW60R125CP JESD22 SP000088489 P diode
    Contextual Info: IPW60R125CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPW60R125CP PG-TO247-3-1 SP000088489 6R125P 6r125p transistor 6R125P 6R125 IPW60R125CP JESD22 SP000088489 P diode PDF

    DF 331 TRANSISTOR

    Abstract: 6r125p 6R125 transistor df 331 transistor 6R125P
    Contextual Info: IPA60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R DS,on in TO220 Fullpak 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPA60R125CP PG-TO220-3-31 SP000095275 6R125P DF 331 TRANSISTOR 6r125p 6R125 transistor df 331 transistor 6R125P PDF

    6r125p

    Abstract: 6R125 transistor 6R125P SP000088489 IPW60R125CP JESD22 PG-TO247-3-1 CA82
    Contextual Info: IPW60R125CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPW60R125CP PG-TO247-3-1 SP000088489 6R125P 009-134-A O-247 6r125p 6R125 transistor 6R125P SP000088489 IPW60R125CP JESD22 PG-TO247-3-1 CA82 PDF