6D DIODE Search Results

Contextual Info: PCB High Density 6D-1Cx0N0-52 PRODUCT DESCRIPTIONS In order to meet high density market demand, 1 Form C SPDT relay has been added to 6D high temperature operating series. Since SPDT contact form allows double the density in tree-circuit. Suitable for Load board applications and high density switching matrix.

Contextual Info: FE6A / 6B / 6C / 6D VISHAY Vishay Semiconductors Ultra Fast Sinterglass Diode Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Superfast recovery time for high efficiency • Low forward voltage, high current capability

FE6D

Abstract: diode 6d 50
Contextual Info: FE6A / 6B / 6C / 6D VISHAY Vishay Semiconductors Ultra Fast Sinterglass Diode Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Superfast recovery time for high efficiency • Low forward voltage, high current capability

diode 6d 50

Contextual Info: FE6A / 6B / 6C / 6D VISHAY Vishay Semiconductors Ultra Fast Sinterglass Diode Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Superfast recovery time for high efficiency • Low forward voltage, high current capability

Contextual Info: FE6A / 6B / 6C / 6D VISHAY Vishay Semiconductors Ultra Fast Sinterglass Diode Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Superfast recovery time for high efficiency • Low forward voltage, high current capability

FE6D

Contextual Info: FE6A / 6B / 6C / 6D VISHAY Vishay Semiconductors Ultra Fast Sinterglass Diode Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Superfast recovery time for high efficiency • Low forward voltage, high current capability

pj969

Abstract: PJ 96
Contextual Info: 6D I30M -120 3 oa y<ry- i> 7, ? =L ~ : Outline Drawings POWER TRANSISTOR MODULE : Features 7.5 21 , 2B.5 19 • High Arm Short Circuit Capability • hFEA^&i,' High DC Current Gain •7' J ' J FfajBL Including Freewheeling Diode • Ifei¥klte Insulated Type

Contextual Info: A710-6D Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.6.0p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min. f(co) Min. (Hz) Cut-off freq.20G P(D) Max. (W)2.0 Semiconductor MaterialSilicon Package StylePin Mounting StyleS

T1596

Abstract: 6DE4 I960 r7hr general electric IT-T1596
Contextual Info: 6D E4 6DE4 IT-T1596 Page 1 DIODE TUBES 2 -6 0 FOR TV DAMPING DIODE APPLICATIONS = DESCRIPTION AND RATING = The 6DE4 is a single heater-cathode-type diode designed for use as the damping diode in the horizontal-deflection circuit of television receivers. BASING DIAG RAM

Contextual Info: 681-6D Diodes Silicon Center-Tapped Doubler I O Max.(A) Output Current15 @Temp (øC) (Test Condition)55# V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.150 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)10 @Temp. (øC) (Test Condition)25’

Contextual Info: 689-6D Diodes High-Speed Center-Tapped Doubler I O Max.(A) Output Current15 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time500n @I(F) (A) (Test Condition)1.0 @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)10

VN0635N5

Abstract: vn0640n5
Contextual Info: VN0 6D Supertex inc, N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Ros<on max) 350V ion 400V ion 1! BVqss/ BVdqs Order Number / Package TO-39 TO-92 TO-220 Dice1 0.75A VN0635N2 VN0635N3 VN0635N5 VN0635ND 0.75A

ZX24

Abstract: ZX27 ZX12 ZX7.5 ZX13 ZX5.1 "104 srk zx 55 ZX4.7 ZX16
Contextual Info: 6d \ ducretg jemiconDuaoR ZX3.9 . . . Z X 2 0 0 12.5 W1 in o u m y « Silicon PowerZeritrr Diodes for use* in stabilizing and clipping circuits with high power rating. I he 2yru;r voltages are graded according to the international T 24 standard. Sm aller voltage to leran ces on request.

noise diode generator

Abstract: noise generator tube oscilloscope noise diode thyratron tube operation thyratron tube thyratron
Contextual Info: w SYLVANIA SYLVANIA engineering data service 6D4 QUICK REFERENCE DATA MECHANICAL DATA T he Sylvania T ype 6D 4 is a m in­ iature triode thyratron intended for use as a relay tube or wide band noise generator. B u l b . T -5j^

6DI30M-120

Abstract: M613 T760 VE60
Contextual Info: 6D I30M -120 3 oa y<ry- i> 7, ? =L ~ : Outline Drawings POWER TRANSISTOR MODULE : Features 7.5 21 , 2B.5 19 • • hFEA^&i,' High Arm Short Circuit Capability High DC Current Gain • 7 ' J ' J FfajBL 11 |e J Including F re e w h e e lin g Diode • Ifei¥klte Insulated Type

smd diode 6D

Abstract: SMD diode KL smd diode ww 1 3q marking diode smd diode 600v 1a DE5L60 marking 6D smd diode dp 3q smd marking diode
Contextual Info: Super Fast Recovery Diode Single Diode WWW OUTLINE Package : E-pack DE5L60 U nit! mm Weight 0.326g Typ M 600V 5A ï'2'4 Feature • SMD • SMD • High Voltage • trr-50ns • trr-50ns i.m v f ^ 5 I — 6D — 01 Main Use • PFC • PFC(Power Factor Correction)

B426A

Abstract: 6DI50M120 6DI50M-120 T151 T760 T810
Contextual Info: 6D I50M -120 5 oa '< n — v ^ ± /< 7 =l — )v : Outline Drawings P O W ER T R A N S IS T O R M O D U L E •45JI: : Features • u High Arm Short Circuit Capability • hFE*x'f i l ' High DC Current Gain • 7U— —KrtHS Including Freewheeling Diode

Gex DIODE

Contextual Info: 6D I50M -050 50 a IW f i T t i i • Outline Drawings POWER TRANSISTOR MODULE ■ t t f t : Features • SfthpE • High DC Current Gain High Speed Switching : Applications • illffl- fV - 'i—^ General Purpose Inverter • mznwM Uninterruptible Power Supply

Contextual Info: DF N1 00 6D -2 PMEG6002ELD 60 V, 0.2 A low VF MEGA Schottky barrier rectifier 10 December 2013 Product data sheet 1. General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small

nxp Standard Marking

Contextual Info: DF N1 00 6D -2 PMEG6002ELD 60 V, 0.2 A low VF MEGA Schottky barrier rectifier 5 February 2014 Product data sheet 1. General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small

smd diode 6D

Contextual Info: DF N1 00 6D -2 PMEG6002ELD 60 V, 0.2 A low VF MEGA Schottky barrier rectifier 3 May 2013 Product data sheet 1. General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small

B166

Abstract: 6DI50M-050
Contextual Info: 6D I50M -050 50 a IW fiT tii • Outline Drawings POWER TRANSISTOR MODULE ■ t t f t : Features • SfthpE • High DC Current Gain High Speed Switching : A p p lic a tio n s • illffl- fV - 'i—^ General Purpose Inverter • mznwM Uninterruptible Power Supply

F30L

Contextual Info: STS6DNF30L DUAL N - CHANNEL 30V - 0 .022 & - 6A SO-8 STripFET POWER MOSFET TYPE V STS 6D N F30L d s s 30 V R d S o ii < 0.025 Q. Id 6 A . TYPICAL R D S (on) = 0.022 £2 . STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY . LOW THRESHOLD DRIVE

Diode DO12

Abstract: 1N3875 1N3878 1N3874 1N3879 1N3880 1N3883 05g100 do12
Contextual Info: 3869720 GENERAL D I O D E CORP g 6D GENERÄL DIODE CORP fit. 00331 D DE | 3 0 ^ 7 5 0 D000331 0 | FAST RECOVERY RECTIFIERS o * Ä % 0 ‘S TYPE w » l y , —- y 50 100 200 *300 400 6 @ 100 6 @ 100 6 @ 100 6 @ 100 6 @ 100 1.4 @ 6 1.4 @ 6 1.4 @ 6 1.4 @ 6 1.4 @ 6