6A MARKING SOT23 Search Results

6A marking sot23

Abstract: BC817 SOT23 marking 6A marking 6A SOT 23 6A MARKING
Contextual Info: SEMICONDUCTOR BC817 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 6A 1 2 Item Marking Description Device Mark 6 BC817 hFE Grade A 16 A , 25(B) * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note) * Lot No. marking method

Mosfet

Abstract: SSF2418E 2418E
Contextual Info: SSF2418E 20V Dual N-Channel MOSFET Main Product Characteristics VDSS 20V RDS on 18mohm(typ.) ID 6A SOT23-6 Features and Benefits   Marking and Pin Schematic Diagram Assignment Advanced trench MOSFET process technology Special designed for PWM, load switching and

BC817 cdil

Abstract: BC817 bc818 smd diode 6D SMD Transistor 6f smd transistor 6g BC817-16 BC817-25 BC817-40 BC818-16
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B

BC817

Abstract: BC817 smd bc818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40 smd bc817
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H

BC817

Abstract: BC817 smd BC817 cdil bc818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H BC818-16 = 6E

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transisto rs Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H

Contextual Info: S O T- 2 3 B I P O L A R T R A N S I S T O R S NPN TRANSISTORS • New Product Marking VCEO hFE @VCE/IC VCEsat @IC/IB ICES @VCE Type Code V V/mA max.V mA/mA max.nA V BC817-16 6A 45 100-250 1/100 0.7 500/50 100 45 BC817-25 6B 45 160-400 1/100 0.7 500/50 100

Contextual Info: A Product Line of Diodes Incorporated FMMT718 20V PNP SILICON LOW SATURATION TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • • • • BVCEO > -20V IC = -1.5A Continuous Collector Current ICM = -6A Peak Pulse Current

relay 12v 100A

Abstract: transistor pnp 12V 1A Collector Current vebo 15v sot23 ZXTN23015CFH ZXTP23015CFH ZXTP23015CFHTA
Contextual Info: ZXTP23015CFH 15V, SOT23, PNP medium power transistor Summary V BR CES > -15V, V(BR)CEO > -15V V(BR)ECO > -6V IC(CONT) = -6A RCE(SAT) = 20m⍀ typical VCE(SAT) < -36mV @ -1A PD = 1.25W Complementary part number ZXTN23015CFH Description Advanced process capability and package design have been used to

SOT23 marking 6A

Contextual Info: ZXTN23015CFH 15V, SOT23, NPN medium power transistor Summary V BR CEX > 60V, V(BR)CEO > 15V IC(CONT) = 6A RCE(SAT) = 19m⍀ typical VCE(SAT) < 30mV @ 1A PD = 1.25W Complementary part number : ZXTP23015CFH Description Advanced process capability and package design have been used to

181 622 b

Abstract: "marking 327" mosfet motor dc 48v ZXTN23015CFH ZXTN23015CFHTA ZXTP23015CFH
Contextual Info: ZXTN23015CFH 15V, SOT23, NPN medium power transistor Summary V BR CEX > 60V, V(BR)CEO > 15V IC(CONT) = 6A RCE(SAT) = 19m⍀ typical VCE(SAT) < 30mV @ 1A PD = 1.25W Complementary part number : ZXTP23015CFH Description Advanced process capability and package design have been used to

FMMT718

Abstract: sot-23 15V vebo pnp
Contextual Info: A Product Line of Diodes Incorporated FMMT718 20V PNP SILICON LOW SATURATION TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • • • • BVCEO > -20V IC = -1.5A Continuous Collector Current ICM = -6A Peak Pulse Current

ZXTN25012EFH

Contextual Info: ZXTN25012EFH 12V, SOT23, NPN medium power transistor Summary BVCEO > 12V BVECX > 6V hFE > 500 IC cont = 6A VCE(sat) < 32mV @ 1A RCE(sat) = 23m⍀ PD = 1.25W Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline

ZXTN25012EFH

Contextual Info: ZXTN25012EFH 12V, SOT23, NPN medium power transistor Summary BVCEO > 12V BVECO > 4.5V hFE > 500 IC cont = 6A VCE(sat) < 32mV @ 1A RCE(sat) = 23m⍀ PD = 1.25W Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline

sot23 718

Abstract: fmmt718 718 SOT23 sot23-6 marking 718
Contextual Info: A Product Line of Diodes Incorporated FMMT718 20V PNP SILICON LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • • • BVCEO > -20V IC = -1.5A Continuous Collector Current ICM = -6A Peak Pulse Current

TS16949

Abstract: ZXTN23015CFH ZXTP23015CFH ZXTP23015CFHTA
Contextual Info: ZXTP23015CFH 15V, SOT23, PNP medium power transistor Summary V BR CES > -15V, V(BR)CEO > -15V V(BR)ECO > -6V IC(CONT) = -6A RCE(SAT) = 20m⍀ typical VCE(SAT) < -36mV @ -1A PD = 1.25W Complementary part number ZXTN23015CFH Description C Advanced process capability and package design have been used to

Contextual Info: ZXTP23015CFH 15V, SOT23, PNP medium power transistor Summary V BR CES > -15V, V(BR)CEO > -15V V(BR)ECO > -6V IC(CONT) = -6A RCE(SAT) = 20m⍀ typical VCE(SAT) < -36mV @ -1A PD = 1.25W Complementary part number ZXTN23015CFH Description C Advanced process capability and package design have been used to

FMMT619TA

Abstract: FMMT619TC FMMT619 FMMT720
Contextual Info: A Product Line of Diodes Incorporated FMMT619 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • BVCEO > 50V IC = 2A Continuous Collector Current Low Saturation Voltage VCE sat < 200mV @ 1A

SOT23 marking 619

Abstract: marking 619 npn sot23
Contextual Info: A Product Line of Diodes Incorporated FMMT619 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • • • • BVCEO > 50V IC = 2A Continuous Collector Current Low Saturation Voltage VCE sat < 200mV @ 1A

Contextual Info: A Product Line of Diodes Incorporated FMMT619 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • BVCEO > 50V IC = 2A Continuous Collector Current Low Saturation Voltage VCE sat < 200mV @ 1A

Contextual Info: A Product Line of Diodes Incorporated ZXTP749F 25V PNP LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • • BVCEO > -25V BVCEO > -35V forward blocking voltage IC = -3A Continuous Collector Current

Contextual Info: A Product Line of Diodes Incorporated ZXTN649F 25V NPN LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • • BVCEO > 25V BVCBO > 35V forward blocking voltage IC = 3A high Continuous Collector Current

MARKING CODE 618 SOT23

Abstract: FMMT618 AEC-Q101 application note LED reliability marking 618
Contextual Info: A Product Line of Diodes Incorporated FMMT618 20V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > 20V IC = 2.5A Continuous Collector Current RCE SAT = 50mΩ for a low equivalent On-Resistance

FMMT619

Abstract: fmmt720
Contextual Info: A Product Line of Diodes Incorporated FMMT619 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • • BVCEO > 50V IC = 2A Continuous Collector Current 625mW power dissipation