SSF2418E Search Results

Mosfet

Abstract: SSF2418EB
Contextual Info: SSF2418EB 20V Dual N-Channel MOSFET DESCRIPTION The SSF2418EB uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 0.5V. This device is suitable for use as a load switch. It is ESD protected.

2418E

Contextual Info: SSF2418EBK DESCRIPTION The SSF2418EBK uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch. It is ESD protected. GENERAL FEATURES Schematic diagram

2418E

Abstract: SSF2418E SOT23-6 Marking .64 SOT23-6 "battery protection" SOT23-6 MARKING SSF2418 battery protection sot23-6 55A SOT23-6
Contextual Info: SSF2418E DESCRIPTION The SSF2418E uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch. It is ESD protected. GENERAL FEATURES Schematic diagram

Contextual Info: SSF2418EB DESCRIPTION The SSF2418EB uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 0.5V. This device is suitable for use as a load switch. It is ESD protected. GENERAL FEATURES Schematic diagram

Mosfet

Abstract: SSF2418EBK
Contextual Info: SSF2418EBK 20V Dual N-Channel MOSFET DESCRIPTION The SSF2418EBK uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch. It is ESD protected.

Mosfet

Abstract: SSF2418E 2418E
Contextual Info: SSF2418E 20V Dual N-Channel MOSFET Main Product Characteristics VDSS 20V RDS on 18mohm(typ.) ID 6A SOT23-6 Features and Benefits   Marking and Pin Schematic Diagram Assignment Advanced trench MOSFET process technology Special designed for PWM, load switching and